Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC28F640P30BF65B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM		R-PBGA-B64		2 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	1.7 V		8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
MT25TL01GBBB8ESF-0AAT	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		35 mA	134217728 words	3			8	SMALL OUTLINE	SOP16,.4	1		20	1.27 mm	105 Cel	3-STATE	128MX8	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	133 MHz	7.5 mm					1073741824 bit	2.7 V				30	260	NOR TYPE	.0002 Amp	10.3 mm			3
MT28EW512ABA1HPC-0AAT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	105 Cel		32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			13 mm		105 ns	3
MT28F800B5WG-8B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	70 Cel		512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	4.5 V	100,000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT29F128G08CECABH1-12Z:A	Micron Technology	FLASH	COMMERCIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE					1 mm	70 Cel		16GX8	16G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1 mm			12 mm					137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F256G08CMCABH2-10:A	Micron Technology	FLASH	COMMERCIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words	3.3			8	GRID ARRAY, THIN PROFILE					1 mm	70 Cel		32GX8	32G	0 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			12 mm					274877906944 bit	2.7 V			e1			MLC NAND TYPE		18 mm			2.7
MT29F2G08ABAEAWP-ITX:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			268435456 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		256MX8	256M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					2147483648 bit	2.7 V			e3	30	260	SLC NAND TYPE		18.4 mm			2.7
MT29F4G08ABADAH4-AITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		512MX8	512M	-40 Cel					BOTTOM		R-PBGA-B63		3.6 V	1 mm			9 mm					4294967296 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MT29F4G08ABADAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		512MX8	512M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63							Not Qualified				4294967296 bit			2K	e1	30	260	SLC NAND TYPE	.0001 Amp			25 ns		NO
MT35XU02GCBA2G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm			SPI		2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MTFC128GAPALNA-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B100		3.6 V	1.2 mm			14 mm					1099511627776 bit	2.7 V			e1	30	260			18 mm			2.7
MTFC128GAPALNS-AITTR	Micron Technology	FLASH CARD																																	TIN SILVER COPPER																				30	260						2.7
MTFC64GAJAEDN-AAT	Micron Technology	FLASH CARD																																																												2.7
MTFC8GAMALGT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B153		3.6 V	.8 mm		200 MHz	11.5 mm					68719476736 bit	2.7 V						NAND TYPE		13 mm
N25Q00AA13GSF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1073741824 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		1GX1	1G	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0002 Amp	10.3 mm			3
N25Q064A13ESE40E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8		3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
N25Q128A11E1241E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
N25Q128A13E1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified		SPI		134217728 bit	2.7 V			e1	30	260	NOR TYPE	.0001 Amp	8 mm			3
N25Q256A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24		3.6 V	1.2 mm		108 MHz	6 mm	Not Qualified		SPI		268435456 bit	2.7 V			e1			NOR TYPE	.00025 Amp	8 mm			3
JS28F512M29EWHA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	31 mA	33554432 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	512	YES	MATTE TIN	YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified				536870912 bit	2.7 V		16/32	e3	30	260	NOR TYPE	.000225 Amp	18.4 mm	YES	110 ns	2.7	YES
M29W800FT70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				TOP	8388608 bit	3 V	TOP BOOT BLOCK		e1					8 mm		70 ns	3
MT25QL01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					2147483648 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT28EW256ABA1HJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3	3.6 V	1.2 mm			14 mm					268435456 bit	2.7 V			e3	30	260	NOR TYPE		18.4 mm		70 ns	3
MT28GU01GAAA1EGC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64		2 V	1.2 mm			8 mm					1073741824 bit	1.7 V			e1					10 mm		96 ns	1.8
MT29F128G08AUCBBH3-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			12 mm					137438953472 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F128G08CECBBH1-10:B	Micron Technology	FLASH																																																							MLC NAND TYPE					3.3
MT29F32G08TAAWC-ET:B	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		4GX8	4G	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F32G08TAAWC:B	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4294967296 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		4GX8	4G	0 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm					34359738368 bit	2.7 V						SLC NAND TYPE		18.4 mm			3.3
MT29F4G01AAADDHC:D	Micron Technology	FLASH	COMMERCIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			20 mA	536870912 words			3/3.3	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories	10	.8 mm	70 Cel		512MX8	512M	0 Cel					BOTTOM	HARDWARE	R-PBGA-B63				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		4294967296 bit							SLC NAND TYPE	.00005 Amp
MT29F512G08CUCABH3-12IT:A	Micron Technology	FLASH	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64GX8	64G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100		3.6 V	1.4 mm			12 mm					549755813888 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			2.7
MT29F64G08AECABH1-10:A	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		1M	50 mA	8589934592 words		NO	1.8,3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G08ABCBBH1-12IT:B	Micron Technology	FLASH	INDUSTRIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	1073741824 words	1.8	NO	1.8	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		1GX8	1G	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B100							Not Qualified				8589934592 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MTFC16GJDEC-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B169		3.6 V	.8 mm		52 MHz	14 mm					137438953472 bit	2.7 V			e1			MLC NAND TYPE		18 mm			3.3
MTFC64GAPALHT-AAT	Micron Technology
MTFC8GAMALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100		3.6 V	1 mm		200 MHz	14 mm					68719476736 bit	2.7 V						NAND TYPE		18 mm
N25Q064A13EF640F	Micron Technology	FLASH	INDUSTRIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX64	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	.9 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		67108864 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			3
N25Q256A13ESFA0F	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16		3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A81ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16		2 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	1.7 V								10.3 mm			1.8
M25PE40-VMP6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp	6 mm			2.7
M29F800FT55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M45PE40-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-XDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	33 MHz	5 mm	Not Qualified	25 ms	SPI		4194304 bit	2.7 V				30	260	NOR TYPE	.00001 Amp	6 mm			2.7
MT25QL02GCBB8E12-0AUTTR	Micron Technology	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						3
MT25QL128ABA1ESE-MSIT	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			16777216 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL		S-PDSO-G8		3.6 V	2.16 mm		133 MHz	5.285 mm					134217728 bit	2.7 V				30	260			5.285 mm			3.3
MT25QL128ABB8E12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			16777216 words	3			8	GRID ARRAY, THIN PROFILE		1			1 mm	125 Cel		16MX8	16M	-40 Cel					BOTTOM		R-PBGA-B24		3.6 V	1.2 mm		133 MHz	6 mm					134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			8 mm			3
MT25QU01GBBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	SERIAL			60 mA	134217728 words	1.8		1.8	8	GRID ARRAY	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM	HARDWARE/SOFTWARE	S-PBGA-B24				100000 Write/Erase Cycles	133 MHz		Not Qualified		SPI		1073741824 bit							NOR TYPE	.00005 Amp
MT25QU02GCBA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24		2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1			NOR TYPE		8 mm			1.8
MT25QU128ABB8E12-0AUTTR	Micron Technology	FLASH																																																					NOT SPECIFIED	NOT SPECIFIED						1.8
MT25QU512ABA8E12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B24		2 V	1.2 mm		133 MHz	6 mm					536870912 bit	1.7 V						NOR TYPE		8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.