Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q032A13ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	8388608 words	3		3/3.3	4	SMALL OUTLINE	SOP16,.4	2	Flash Memories	20	1.27 mm	85 Cel	8MX4	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		33554432 bit	2.7 V	ALSO CAN BE ORGANISED AS 32M X 1			30	260	NOR TYPE	.0001 Amp	10.3 mm			2.7
N25Q064A13ESE40F	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	1048576 words	3		3/3.3	64	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	1MX64	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			3
PC28F00AP30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	64MX16	64M	-40 Cel	1K	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified				1073741824 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1			NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
JS28F00AP33TFA	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel	64MX16	64M	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm				TOP	1073741824 bit	2.3 V	TOP BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3	30	260			18.4 mm		105 ns	3
JS28F128J3F75H	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56						Not Qualified				134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
JS28F256P30BF	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL		R-PDSO-G56	2 V	1.2 mm		40 MHz	14 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	110 ns	1.8	NO
JS28F512P33BFD	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	85 Cel	32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e3					18.4 mm		105 ns	3
M29W640GB70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel	4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MT28EW512ABA1HPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel	32MX16	32M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		95 ns	3
MT28EW512ABA1LJS-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel	32MX16	32M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		95 ns	3
MT28F128J3RG-15ET	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	8MX16	8M	-40 Cel	128	YES	TIN LEAD	YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	18.4 mm	YES	150 ns	2.7	NO
MT29F1G01AAADDH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1			SLC NAND TYPE		11 mm			2.7
MT29F1G01AAADDH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63	3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT29F1G01ABAFDSF-AAT:FTR	Micron Technology	FLASH																																																			NOT SPECIFIED	NOT SPECIFIED						3.3
MT29F1G08ABCHCET:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	128MX8	128M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63	1.95 V	1 mm			10.5 mm					1073741824 bit	1.65 V			e1			SLC NAND TYPE		13 mm			1.8
MT29F2G16ABAEAWP-AIT:E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	64K	35 mA	134217728 words	3.3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				2147483648 bit	2.7 V		1K				SLC NAND TYPE	.0001 Amp	18.4 mm		25 ns	3.3	NO
MT29F4G08ABBDAH4-IT:DTR	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			536870912 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	512MX8	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm					4294967296 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
MT29F4G16ABBDAH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	268435456 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel	256MX16	256M	-40 Cel	4K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified				4294967296 bit	1.7 V		1K	e1			SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F64G08CBAAAWP-Z:ATR	Micron Technology	FLASH																																MATTE TIN																			30	260						2.7
MT35XL512ABA1G12-0SIT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XU01GBBA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			1073741824 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel	1GX1	1G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm					1073741824 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC128GAPALBH-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel	128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.1 mm		200 MHz	11.5 mm					1099511627776 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
MTFC128GAZAQJP-IT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	95 Cel	128GX8	128G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1 mm			11.5 mm					1099511627776 bit	2.7 V						NAND TYPE		13 mm
MTFDDAK240MBD-2AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel	240GX8	240G	-40 Cel					SINGLE		R-XSMA-N22	5.5 V	7.2 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
PC28F00AP33BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel	64MX16	64M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm				BOTTOM	1073741824 bit	2.3 V	BOTTOM BOOT; IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1					10 mm		95 ns	3
PC28F00BP30EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	64K	31 mA	134217728 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	128MX16	128M	-40 Cel	2K	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified				2147483648 bit	1.7 V	SYMMETRICAL BLOCKS	16	e1	30	260	NOR TYPE	.00048 Amp	10 mm	YES	105 ns	3	NO
PC28F512P30BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,20		Flash Memories		1 mm	85 Cel	32MX16	32M	-40 Cel	4,511	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			BOTTOM	536870912 bit	1.7 V	BOTTOM BOOT	16	e1	30	260	NOR TYPE	.000225 Amp	10 mm	YES	100 ns	3	NO
PC28F640J3F75A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel	4MX16	4M	-40 Cel	64	YES	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
RC28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES			BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00021 Amp	13 mm	YES	17 ns	1.8	NO
JS28F256P30BFE	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel	16MX16	16M	-40 Cel	4,255	YES	MATTE TIN		DUAL		R-PDSO-G56	2 V	1.025 mm			14 mm	Not Qualified			BOTTOM	268435456 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e3			NOR TYPE	.00021 Amp	18.4 mm	YES	20 ns	1.8	NO
JS28F320J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	2097152 words	3	NO	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel	2MX16	2M	-40 Cel	32	YES		YES	DUAL		R-PDSO-G56	3.6 V					Not Qualified				33554432 bit	2.7 V		4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns	2.7	NO
M25P10-AVMB6TG	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					.5 mm	85 Cel	128KX8	128K	-40 Cel					DUAL		R-PDSO-N8	3.6 V	.6 mm		50 MHz	2 mm					1048576 bit	2.7 V				30	260	NOR TYPE		3 mm			2.7
M25P32-VMF3TPB	Micron Technology	FLASH	AUTOMOTIVE	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	4194304 words			3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	125 Cel	4MX8	4M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	75 MHz	7.5 mm	Not Qualified		SPI		33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00005 Amp	10.3 mm			2.7
M25PX16-VMW6TG	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		2.5/3.3	8	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel	2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	2.5 mm	100000 Write/Erase Cycles	75 MHz	5.62 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00001 Amp				3
M25PX80-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words	3		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.3 V				30	260	NOR TYPE	.00001 Amp	4.9 mm			3
M25PX80-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	1048576 words			2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel	1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified		SPI		8388608 bit	2.3 V				30	260	NOR TYPE	.00001 Amp	4.9 mm			3
M29F160FB5AN6F2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	1MX16	1M	-40 Cel	1,2,1,31	YES	Matte Tin (Sn)	YES	DUAL		R-PDSO-G48	5.5 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	4.5 V	BOTTOM BOOT BLOCK		e3	30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MT25QU512ABB8E56-0SIT	Micron Technology	FLASH	INDUSTRIAL	27	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			536870912 words	1.8			1	GRID ARRAY						85 Cel	512MX1	512M	-40 Cel					BOTTOM		R-PBGA-B27	2 V			166 MHz						536870912 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE					1.8
MT28EW01GABA1HJS-0AAT	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH					.5 mm	105 Cel	64MX16	64M	-40 Cel					DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm					1073741824 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		105 ns	3
MT28EW128ABA1LPN-0SIT	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel	8MX16	8M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B56	3.6 V	1 mm			7 mm					134217728 bit	2.7 V			e1	30	260	NOR TYPE		9 mm		70 ns	3
MT28F004B5VG-8B	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	55 mA	524288 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	512KX8	512K	0 Cel	1,2,1,3	YES	TIN LEAD		DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	100000 ERASE CYCLES; BOTTOM BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		80 ns	5	NO
MT28F008B3VG-10T	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel	1MX8	1M	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F008B3VG-10TET	Micron Technology	FLASH	INDUSTRIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	30 mA	1048576 words	3.3	NO	3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	85 Cel	1MX8	1M	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G40	3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES, USER SELECTABLE VPP=3.3V/5V/12V; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		100 ns	3	NO
MT28F800B3SG-9T	Micron Technology	FLASH	COMMERCIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	70 Cel	512KX16	512K	0 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G44	3.6 V	2.8 mm	100000 Write/Erase Cycles		12.6 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	28.02 mm		90 ns	3	NO
MT28F800B3WG-9TET	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,96K,128K	25 mA	524288 words	3.3	NO	3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel	512KX16	512K	-40 Cel	1,2,1,7	YES	TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm	100000 Write/Erase Cycles		12 mm	Not Qualified			TOP	8388608 bit	3 V	100,000 ERASE CYCLES; TOP BOOT BLOCK		e0			NOR TYPE	.000005 Amp	18.4 mm		90 ns	3	NO
MT29F1G01AAADDH4-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			1073741824 words	3.3			1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel	1GX1	1G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63	3.6 V	1 mm		50 MHz	9 mm					1073741824 bit	2.7 V			e1	30	260	SLC NAND TYPE		11 mm			2.7
MT29F1G08ABAEAWP:E	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel	128MX8	128M	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					1073741824 bit	2.7 V			e3	NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		18.4 mm			2.7
MT29F1G08ABBDAH4-ITX:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32			10	.8 mm	85 Cel	128MX8	128M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM	HARDWARE	R-PBGA-B63	1.95 V	1 mm	100000 Write/Erase Cycles		9 mm					1073741824 bit	1.7 V		2K	e1	30	260	SLC NAND TYPE	.00005 Amp	11 mm			1.8	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.