Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W640GT90NA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
M29W640GT70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA050MAR-1K11AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAT240MAV-2AE12ZZYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		240GX8	240G	0 Cel					SINGLE	R-XSMA-N52		3.46 V	3.75 mm	29.85 mm			2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W640GH90NA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
RC28F640P30BF65	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	1.8			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		4MX16	4M	-40 Cel			TIN LEAD SILVER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	10 mm		BOTTOM	67108864 bit	1.7 V	BOTTOM BOOT; SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		13 mm		65 ns	1.8
M29W128GL60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W160EB7AZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		BOTTOM	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W160FB7AN6E6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK256MAZ-1AE12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					SINGLE	R-XSMA-X22		5.5 V	7 mm	69.85 mm			2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAA512MAM-1K11AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDHBE1T9TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			2111062325329 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		1.92TX8	1.92T	0 Cel					UNSPECIFIED	R-XXMA-N							16888498602639 bit							TLC NAND TYPE
MTFDHBG3T8TDF-1AW42ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			4222124650659 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		3.84TX8	3.84T	0 Cel					UNSPECIFIED	R-XXMA-N							33776997205278 bit							TLC NAND TYPE
JR28F032M29EWTB	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified	TOP	33554432 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
RC28F128P33BF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified	BOTTOM	134217728 bit	2.3 V		8	e0	NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.002 Amp	10 mm	YES	17 ns	3	NO
M29W640GT70ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W800FT70ZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm	6 mm	Not Qualified	TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT480MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29DW323DT7AZE6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			33554432 bit	2.7 V								8 mm		70 ns	3
M29W256GL70ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAK120MAV-2AH1ZAA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
M29W400FB70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAK240MAV-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320DB80N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm		BOTTOM	33554432 bit	2.5 V						NOR TYPE		18.4 mm		80 ns	3
MTFDDAT480MAV-1AE11ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52			3.7 mm	29.85 mm										MLC NAND TYPE		50.8 mm			3.3
M29W160ET7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm		TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
MTFDDAA100MAR-1K1	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAT240MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GB6AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified	BOTTOM	67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	60 ns	3	YES
RD48F6000M0YFB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM	R-PBGA-B105					Not Qualified	BOTTOM	1073741824 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAK240MAV-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RD48F4000M0YCB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B105					Not Qualified	BOTTOM	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W128GH70N3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified		131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M58WR064KT7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B56		2 V	1 mm	7.7 mm	Not Qualified	TOP	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
M29F800FB5AZA6E-2	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W800FB5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29F200FB55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm	12.6 mm	Not Qualified	BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W640GL7ANA3E	Micron Technology	FLASH																																																						3
M29W640GL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA256MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY														UNSPECIFIED	R-XXMA-N				54 mm										MLC NAND TYPE		78.2 mm			3.3
MT4LSFT3200H-133	Micron Technology
MTFDDAK120MAV-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RC28F256P33B85B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		16MX16	16M	-40 Cel			TIN LEAD SILVER		BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified	BOTTOM	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e0			NOR TYPE		10 mm		85 ns	3
M29W640GB7AZS3E	Micron Technology	FLASH																																																						3
M29W064FT60ZB3E	Micron Technology	FLASH																																																						3
MTFDDAK480MAV-1AE11ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm			4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320FB80N3F6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48					Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
RD48F4400P0TBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	33554432 words		NO	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B88					Not Qualified	BOTTOM/TOP	536870912 bit			4				NOR TYPE	.00039 Amp		YES	95 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.