Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
PC48F4400P0TB0EA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE				1 mm	85 Cel		32MX16	32M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	536870912 bit	2.3 V	ASYNCHRONOUS READ MODE		e1			NOR TYPE		13 mm		95 ns	2.7
MTFDDAT120MAV-1AE11AAYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER		R-XUUC-N52		3.7 mm	29.85 mm											MLC NAND TYPE		50.8 mm			3.3
M29W400FT90N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48				Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W160FB80ZA3SF6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM		R-PBGA-B48				Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAA128MAM-1K11	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK480MAV-2AE12AAYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDHBE960TDF-1AW4ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			1030792151040 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-N							8246337208320 bit							TLC NAND TYPE
M29W160ET80ZA3	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm			TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
M29F200FT5AM6E2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm	12.6 mm	Not Qualified		TOP	2097152 bit	4.5 V	TOP BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W640GL6AZF3E	Micron Technology	FLASH																																																							3
RC28F128J3D75B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64				Not Qualified			134217728 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
MTFDDAA512MAM-1J11	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAA400MAR-1J11AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAT480MAV-1AH12ACYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDCAE002SAF-1C2IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		2GX8	2G	-40 Cel					UNSPECIFIED		R-XXMA-X	5.25 V	9.7 mm	26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAA100MAR-1J11AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAT256MAR-1J12AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29F400FB55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm	12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAC064MAM-1J2AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W320EB90ZS1	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm	11 mm			BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
RC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified			1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
MTFDDAT256MAM-1J12	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK480MBP-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-X22	5.5 V	7.2 mm	69.85 mm				4123168604160 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm			5
M29W640GT7AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W320DT80ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm			TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M29W400FB7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48				Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W160EB70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm			BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
MTFDDAT128MAY-1AH1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL		R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK960MAV-2AH11ABYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W128GL7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	.00007 ms		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M58WR032KB7AZB6E	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B56	2 V	1 mm	7.7 mm	Not Qualified		BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00005 Amp	9 mm	YES	70 ns	1.8	NO
M29F200FT5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G48				Not Qualified		TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAV480MAV-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAT480MAV-1AE11ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAC256MAM-1K2	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W640GB70NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAV512MAY-1AE1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL		R-XDMA-N75	3.46 V	3.58 mm	22 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W320DT7AZE6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified		TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAK512MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY														UNSPECIFIED		R-XXMA-N		7 mm	69.85 mm											MLC NAND TYPE		100.2 mm			5
MTFDDAC064MAM-1K1AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAT512MAY-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	HARDWARE	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAA064MAM-1J21	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDDAK480MAV-2AE1ZAC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W400DT55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm	12 mm			TOP	4194304 bit	2.7 V			e3			NOR TYPE		18.4 mm		55 ns	3
M29DW323DB7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL		R-PDSO-G48	3.6 V	1.2 mm	12 mm				33554432 bit	2.7 V								18.4 mm		70 ns	3
M29W160ET80ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm	6 mm			TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
RD48F3000M0YCC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-30 Cel	64	NO			BOTTOM		R-PBGA-B107				Not Qualified		BOTTOM	134217728 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29F160FT55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48				Not Qualified		TOP	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.