Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M58WR064HL70ZB6E	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B44					Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
RD48F4000M0YTC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		16MX16	16M	-30 Cel	128	NO			BOTTOM	R-PBGA-B107					Not Qualified		TOP	268435456 bit			16				NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GL70NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	125 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK200MAR-1J1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
PH28F640W30BC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56					Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.000021 Amp		YES	85 ns		NO
M29W256GL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F800FB5AM6T2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm		12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
PH28F320W18TD60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	1.95 V	1 mm		7.7 mm	Not Qualified		TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
MTFDDAA128MAM-1J1AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W160EB80ZS3S	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29F400FT55N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F800FB5AM6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44					Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
RC48F4400P0VB00	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			33554432 words	1.8			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel					BOTTOM	R-PBGA-B64	2 V	1.3 mm		10 mm			BOTTOM	536870912 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE					NOR TYPE		13 mm		88 ns	1.8
MTFDDAK120MAV-1AE11ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W256GL60ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W160ET7AZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm			TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W160FT7AN6E6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GT6AZA3F	Micron Technology	FLASH																																																								3
M29F400FB55M3T	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44					Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK800MBP-1AN16AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29F200FB55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48					Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDHBE800TDG-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			858993459200 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		800GX8	800G	0 Cel					UNSPECIFIED	R-XXMA-N								6871947673600 bit							TLC NAND TYPE
MTFDDAA256MAM-1K21AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
RC28F320C3TD90	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	2097152 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	8,31	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified		TOP	33554432 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00002 Amp	13 mm	YES	90 ns	3	NO
M29F200FB55N6S	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48					Not Qualified		BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F800FB55N3T2	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W256GL60N1F	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
MTFDDAT032MAM1J1	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAA256MAM-1K12AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
RC28F256P30T85B	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM	S-PBGA-B64					Not Qualified		TOP	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
MTFDDAT240MAV-2AE12ACYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT120MAV-1AE1ZAC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDCAE002SAF-1B3	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		2GX8	2G	0 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm		26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAT064MAR-1K12AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GB90ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		90 ns	3
MTFDDAK128MAM-1J2	Micron Technology	FLASH								CMOS																																									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
MTFDDAA050MAR-1K1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W256GL7AN3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
RC28F320J3D75D	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified			33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
MTFDDAT120MAV-1AH1ZAC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29DW256G7AZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	32K,128K	20 mA	16777216 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	1		20	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	100000 Write/Erase Cycles	11 mm			BOTTOM/TOP	268435456 bit	2.7 V		8				NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W400FT70N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified		TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAK800MBP-2AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				858993459200 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		800GX8	800G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm		69.85 mm				6871947673600 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm			5
MTFDDAT240MAV-1AH11AAYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK100MAR-1J1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAK960MAV-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK120MAV-2AE11ACYY	Micron Technology	FLASH								CMOS																																									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
RC28F128J3F75D	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	8388608 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	Tin/Lead/Silver (Sn/Pb/Ag)	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm		10 mm	Not Qualified			134217728 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.