Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT256MAM1K112AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAV480MAV-1AE11ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W128GL70N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		8KX16	8K	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified			131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAV120MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W800FT55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48					Not Qualified		TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
MTFDDAA256MAM-1J12	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W640GH7AZS3E	Micron Technology	FLASH																																																							3
MTFDDAC064MAM-1J21AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDDAT240MAV-1AH11ABYY	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W320EB90ZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
PH28F160C3BD70D	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30			.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.964 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e1			NOR TYPE	.00002 Amp	7.286 mm	YES	70 ns	3	NO
PH28F160C3TD70A	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	55 mA	1048576 words	3	NO		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30			.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES	TIN SILVER COPPER		BOTTOM	R-PBGA-B48		3.6 V	1 mm	6.964 mm	Not Qualified		TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e1			NOR TYPE	.000005 Amp	7.286 mm	YES	70 ns	3	NO
RD48F3000P0XTQ0A	Micron Technology	FLASH	INDUSTRIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64					Not Qualified		TOP	134217728 bit			4				NOR TYPE	.000155 Amp		YES	85 ns		NO
MTFDDAK240MAV-1AE11AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
MTFDJAK800MBS-2AN16ABYY	Micron Technology	FLASH																																																		SLC NAND TYPE					3.3
RD48F3000L0YBQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K		8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B88					Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE			YES	85 ns		NO
M29F800FT55N3T2	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm	12 mm	Not Qualified		TOP	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W640GL7AZA3F	Micron Technology	FLASH																																																							3
M58WR064KB7AZQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88					Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAA512MAM-1J2AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W256GL70N6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
RD48F6000M0YUC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories	.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM	R-PBGA-B107					Not Qualified		TOP	1073741824 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GT90ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29DW256G70N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	DUAL	R-PDSO-G56					Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
GE28F160C3BC70	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, FINE PITCH	BGA46,6X8,30		Flash Memories	.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B46		3.6 V	1 mm	6.964 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V						NOR TYPE	.00002 Amp	7.286 mm	YES	70 ns	3	NO
MTFDDAK240MAV-1AH11AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W064FB70N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
M29W640GL70ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAK200MAR-1J1	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W064FB70N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
MTFDDAC064MAM-1J2AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W400FB70N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAA128MAM-1K1AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W128GH7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified	.00007 ms		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W400FB55ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm	6 mm	Not Qualified		BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
MTFDDAK400MAR-1J1	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29F200FT55M6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44					Not Qualified		TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FT5AZA6SF	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDHAL1T2MCF-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS		UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY					55 Cel		1200GX8	1.2T	0 Cel					UNSPECIFIED	R-XXMA-X		3.564 V							3.036 V	SOLID STATE DRIVE					NAND TYPE
CT64M225	Micron Technology	FLASH MODULE	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE	R-XXMA-N			9.5 mm	69.85 mm				549755813888 bit							NAND TYPE		100.2 mm
MTFDDAK240MAV-2AE11AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W400FB55ZA6ST	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
M29W400FT55ZA6SE	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	85 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAT064MAY-1AH12ZZYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel	3-STATE	64GX8	64G	-40 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm	29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W160EB70ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
MTFDDAK240MAV-1AE11ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAT128MAM1J112AC	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAK120MBP-1AN1ZAB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.