Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W256GH70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W640GL7AZF3E	Micron Technology	FLASH																																																								3
MTFDHAL6T4TDR-2AT1ZABYY	Micron Technology	FLASH
MTFDDAT240MAV-2AH11AAYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29F800FB55M3E2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W320DB7AZE6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29F400FB5AM6S	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT480MAV-1AE	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT120MAV-2AE1ZAA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W400FB70ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29F200FB55N32	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W640GH60NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
MQCF015A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					15728640 words	3.3			8	MICROELECTRONIC ASSEMBLY					60 Cel		15MX8	15M	0 Cel					UNSPECIFIED	X-XXMA-X50		3.6 V				Not Qualified			125829120 bit	3 V	CAN ALSO BE OPERATED FROM 4.5 TO 5.5 VOLTS					NOR TYPE					3
GE28F128W30BC90	Micron Technology	FLASH	INDUSTRIAL	60	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA60,9X10,30		Flash Memories	.75 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B60						Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000005 Amp		YES	90 ns		NO
MTFDDAV480MAV-1AE11ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDGAR700SAH-1N1AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					12
PC48F4400P0VB0EA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories	1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	R-PBGA-B64		2 V	1.2 mm		10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	100 ns	1.8	NO
MT8F432M-9S	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			4194304 words				32	MICROELECTRONIC ASSEMBLY							4MX32	4M						SINGLE	R-XSMA-N80						Not Qualified			134217728 bit											90 ns	5
M29W640GB70ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W400FT55ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	BOTTOM	R-PBGA-B48	1	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	4194304 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
M58WR016KB7AZQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	1048576 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B88						Not Qualified		BOTTOM	16777216 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
M29F400FT55N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W256GL7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA064MAM-1J12AC	Micron Technology	FLASH								CMOS																																									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDCAE002SAF-1C1	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		2GX8	2G	0 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm		26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W256GH60ZA6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDDAK120MAV-1AE11ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29DW323DT7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm				33554432 bit	2.7 V								18.4 mm		70 ns	3
M29W400FB90ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	262144 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	BOTTOM	R-PBGA-B48						Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	90 ns		YES
M29W160EB90ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
MTFDHBA480TDF-1AW1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			515396075520 words				8	MICROELECTRONIC ASSEMBLY					70 Cel		480GX8	480G	0 Cel					UNSPECIFIED	R-XXMA-N									4123168604160 bit							TLC NAND TYPE
M29F800FT55N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
RC28F256P30BF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64		2 V	1.2 mm	52 MHz	10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
MQCF010A	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					10485760 words	3.3			8	MICROELECTRONIC ASSEMBLY					60 Cel		10MX8	10M	0 Cel					UNSPECIFIED	X-XXMA-X50		3.6 V				Not Qualified			83886080 bit	3 V	CAN ALSO BE OPERATED FROM 4.5 TO 5.5 VOLTS					NOR TYPE					3
RD48F4400P0VBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B88						Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDDAA050MAR-1J11AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT120MAV-2AH1ZAC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W800FT5AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48						Not Qualified		TOP	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
MTFDDAV240MAV-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAT256MAR-1K12AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W160ET7AN6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		TOP	16777216 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W160EB70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	1048576 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W800FB7AN3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
RC48F2000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B44						Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAK400MAR-1J1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAK060MBD-1AH12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED		ASYNCHRONOUS			64424509440 words	5			8	FLANGE MOUNT					85 Cel		60GX8	60G	-40 Cel					UNSPECIFIED	R-XXFM-X22		5.5 V							515396075520 bit	4.5 V						MLC NAND TYPE					5
MTFDDAA512MAM-1K1AC2	Micron Technology	FLASH								CMOS																																									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDJAK400MBS-2AN16FCYY	Micron Technology	FLASH																																																								3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.