Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RC28F640P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	4194304 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM		S-PBGA-B64							Not Qualified			TOP	67108864 bit			4				NOR TYPE	.000035 Amp		YES	85 ns		NO
M29W640GL70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified				67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA512MAM-1J22AB	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W320DT70ZE3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
JS48F4400P0TB00	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	33554432 words	3	NO	2.5/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories		.5 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	536870912 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00039 Amp	18.4 mm	YES	95 ns	3	NO
M29W800FT7AZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				TOP	8388608 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAT256MAY-1AH12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					DUAL	HARDWARE	R-XDMA-N52		3.46 V	3.75 mm			29.85 mm					2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W160ET90ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		90 ns	3
M29W320DT7AZE6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AH12ABYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					8246337208320 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29F200FB55M6S	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44							Not Qualified			BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F800FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		5.5 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
RC28F00AM29EWH	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V		16/32	e0			NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
MTFDDAA400MAR-1K12AB	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W256GL7AZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W256GH60N6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES		YES	DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
M29W256GL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified	.00007 ms		BOTTOM/TOP	268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT480MAV-2AE1ZAC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W320FT80ZA3SE6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M45PE80-VMS6TP	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			15 mA	1048576 words			3/3.3	8	SMALL OUTLINE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		1MX8	1M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8				100000 Write/Erase Cycles	50 MHz		Not Qualified		SPI		8388608 bit							NOR TYPE	.00001 Amp
M29F400FB55M32	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44		5.5 V	3 mm			12.6 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V				30	235	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W512GH7AN6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	SYNCHRONOUS			33554432 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		32MX16	32M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G56		3.6 V	1.2 mm			14 mm					536870912 bit	2.7 V			e3					18.4 mm		80 ns	2.7
MTFDDAK480MAV-1AH12AAYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
MTFDDAK240MAV-2AE12ZZ	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
MTFDDAT512MAY-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		512GX8	512G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm			29.85 mm					4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W320FT80ZA3F6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			TOP	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAK128MAZ-1AE12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					SINGLE		R-XSMA-X22		5.5 V	7 mm			69.85 mm					1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GB60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM	67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		60 ns	3
M58WR064KB70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B88							Not Qualified			BOTTOM	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAV240MAV-1AE11ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320DT7AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AH1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					8246337208320 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W320DB70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W800FB70ZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	BOTTOM		R-PBGA-B48	1	3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAT120MAV-1AE11ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N52			3.7 mm			29.85 mm												MLC NAND TYPE		50.8 mm			3.3
MTFDDAK480MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N22			7 mm			69.85 mm												MLC NAND TYPE		100.5 mm			3.3
M29W160EB70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	1048576 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GB6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm				BOTTOM	67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
M29W160ET70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
MTFDDAT256MAR-1K1AB	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAK480MAV-2AH12ACYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
MTFDDAA400MAR-1K1AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAT480MAV-2AH11ZZYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M45PE10S-VMP6G	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDSO-N8		3.6 V	1 mm		75 MHz	5 mm		23 ms			1048576 bit	2.7 V						NOR TYPE		6 mm			2.7
MTFDDAT064MAM1J12AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W640GH7ANA6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified				67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GH6AZF3F	Micron Technology	FLASH																																																												3
MTFDJAK960MBT-2AN16ABYY	Micron Technology	FLASH																																																							SLC NAND TYPE					3.3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.