Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29F160FB5AN6S	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	16777216 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDHAL3T2TDR-2AT1ZABYY	Micron Technology	FLASH
M29W128GH70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAT128MAR-1J12AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAC200SAL-1N1AB	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAT120MAV-1AE11ZZYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52		3.7 mm	29.85 mm										MLC NAND TYPE		50.8 mm			3.3
RC48F3000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories	.5 mm	85 Cel		8MX16	8M	-40 Cel	8, 255	YES			BOTTOM	R-PBGA-B44				Not Qualified	BOTTOM	134217728 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
M29W320ET90ZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29W640GL60ZF3E	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified	TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
MTFDDAA100MAR-1K12	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29F200FT55M6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK480MAV-2AH11AAYY	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAT128MAZ-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAT480MAV-1AE11AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MT8F832M-7S	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY							8MX32	8M						SINGLE	R-XSMA-N80				Not Qualified		268435456 bit											70 ns	5
MTFDJAL1T6MBT-2AN16ABYY	Micron Technology	FLASH																																																SLC NAND TYPE					3.3
M29W320DB7AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W320DB70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified	BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29F800FB55M3T	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44				Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAT480MAV-1AE1ZAC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
M29F800FT55M3T2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44	5.5 V	3 mm	12.6 mm	Not Qualified	TOP	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAT064MAR-1J11	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
RD48F2000P0ZBQ0A	Micron Technology	FLASH	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B88	2 V	1.2 mm	8 mm	Not Qualified	BOTTOM	67108864 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4		30	235	NOR TYPE	.000035 Amp	10 mm	YES	88 ns	1.8	NO
M29W400FT55ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		256KX16	256K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm		TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		8 mm		55 ns	3
MTFDDAC064MAM-1J1AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAK480MAV-1AE12ZZYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22		7 mm	69.85 mm										MLC NAND TYPE		100.5 mm			3.3
MTFDDAT256MAR-1J1	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAA128MAM-1K11AC	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTSD128AKC7MS-1WT	Micron Technology
M29W256GL7AZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, THIN PROFILE		8		1 mm	70 Cel		16MX16	16M	0 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm		BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAK1T0MAY-1AE12AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			1099511627776 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		1TX8	1T	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm			8796093022208 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W320FB80N3SF6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W160ET70ZS3	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm		TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT032MAM1J1AA	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAK240MBP-2AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		240GX8	240G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7.2 mm	69.85 mm			2061584302080 bit	4.5 V	LENGTH_MAX					MLC NAND TYPE		100.5 mm			5
MTFDDAA200MAR-1J12	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					3.3
MTFDDAT512MAY-1AE12ZZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm			4398046511104 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M58BW016FT8ZA3F	Micron Technology	FLASH	AUTOMOTIVE	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			BOTTOM	R-PBGA-B80				Not Qualified	TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
M29F800FT55M6T	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G44				Not Qualified	TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDCAE008SAF-1B3IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		8GX8	8G	-40 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm			68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAK100MAR-1K1	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
MTFDDAK960MAV-1AE11AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm			8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
PH28F320W18TE60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B56	1.95 V	1 mm	7.7 mm	Not Qualified	TOP	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
M58WR064HL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B80				Not Qualified	BOTTOM	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
M29F800FB55ZA3-2	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	BALL	PARALLEL		16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM	R-PBGA-B48				Not Qualified	BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29F200FB5AN6S	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48				Not Qualified	BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK480MAV-2AE11ABYY	Micron Technology	FLASH								CMOS																																								MLC NAND TYPE					5
M29F160FT5AN6E2	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	1048576 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	12 mm	Not Qualified	TOP	16777216 bit	4.5 V	TOP BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.