Micron Technology Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
JR28F064M29EWBA	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e3			NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	3	YES
MT8F832M-9B	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY							8MX32	8M						SINGLE	R-XSMA-N80					Not Qualified			268435456 bit											90 ns	5
MTFDDAA200MAR-1J1AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W160ET7AZS6	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm		11 mm			TOP	16777216 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAA050MAR-1J11	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29DW256G7ANF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH				.5 mm	85 Cel		16MX16	16M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm				268435456 bit	2.7 V			e3					18.4 mm		70 ns	3
PZ28F064M29EWBB	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48	3.6 V	1 mm		6 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MTFDDAK120MAV-1AE12AAYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22		7 mm		69.85 mm									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			3.3
M29W400FB70N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48					Not Qualified		BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAC064MAM-1K2AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29W320FB80ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm			BOTTOM	33554432 bit	2.5 V	BOTTOM BOOT BLOCK		e1			NOR TYPE		8 mm		80 ns	3
MTFDDAV240MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RC28F00AP30TF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	50 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories	1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	TIN LEAD SILVER		BOTTOM	R-PBGA-B64	2 V	1.2 mm		8 mm	Not Qualified		TOP	1073741824 bit	1.7 V		16	e0			NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
MTFDDAT128MAM-1J12AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29F400FB55N32	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
RD48F4000P0XTQ0	Micron Technology	FLASH	INDUSTRIAL	80	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM	R-PBGA-B80	3.6 V	1 mm		8 mm	Not Qualified		TOP	268435456 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000195 Amp	11 mm	YES	85 ns	3	NO
MTFDDAA200MAR-1J12AA	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAV120MAV-1AE11ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDBAA030MAE-1C1	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					5
M29DW256G60N6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20		Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	8,126	YES		YES	DUAL	R-PDSO-G56					Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAT120MAV-1AE12ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDGAR350SAH-1N1AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					12
M29DW323DB7AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	SMALL OUTLINE, THIN PROFILE		8		.5 mm	85 Cel		2MX16	2M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm				33554432 bit	2.7 V								18.4 mm		70 ns	3
MTFDDAK1T0MAY-1AE1ZACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			1099511627776 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		1TX8	1T	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm		69.85 mm				8796093022208 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAT256MAR-1K11AB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
RD48F4000M0YWB0	Micron Technology	FLASH	OTHER	105	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA105,9X12,32		Flash Memories	.8 mm	85 Cel		16MX16	16M	-25 Cel	128	NO			BOTTOM	R-PBGA-B105					Not Qualified		TOP	268435456 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
MTFDDAA128MAM-1J22	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29F800FT5AN6T2	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		TOP	8388608 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29F800FB55N3F2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M45PE10S-VMN6G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL	R-PDSO-G8	3.6 V	1.75 mm	75 MHz	3.9 mm		23 ms		1048576 bit	2.7 V						NOR TYPE		4.9 mm			2.7
MTFDDAT240MAV-1AE	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
MTFDDAT120MAV-2AH1ZAB	Micron Technology	FLASH								CMOS																																										MLC NAND TYPE					3.3
M29W128GH60N1F	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories	.5 mm	70 Cel		8KX16	8K	0 Cel	128	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified			131072 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
RD48F2200W0YDQ0	Micron Technology	FLASH		88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	4K,32K		4194304 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm			4MX16	4M		16,254	YES	TIN LEAD		BOTTOM	R-PBGA-B88	1.95 V	1.2 mm		8 mm	Not Qualified		BOTTOM/TOP	67108864 bit	1.7 V		4	e0			NOR TYPE		10 mm	YES	14 ns	1.8	NO
MTFDDAK120MAV-2AE12ABYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm		69.85 mm				1030792151040 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			5
M29W320DT70ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm		6 mm	Not Qualified		TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W064FB6AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			BOTTOM	67108864 bit	2.7 V						NOR TYPE		18.4 mm		60 ns	3
M29W256GH7AN3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		16MX16	16M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm			BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
RD48F2000W0YUQ0	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88					Not Qualified		TOP	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAK256MAY-1AH12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm		69.85 mm				2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GT7ANA3F	Micron Technology	FLASH																																																							3
M29W064FB70ZB6F	Micron Technology	FLASH																																																							3
MTFDDAA064MAM-1J12AB	Micron Technology	FLASH								CMOS																																								NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
MTFDDAV512MAY-1AE1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N75	3.46 V	3.58 mm		22 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W256GH70N6F	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE	TSSOP56,.8,20	8	Flash Memories	.5 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	MATTE TIN	YES	DUAL	R-PDSO-G56	3.6 V	1.2 mm		14 mm	Not Qualified	.00007 ms	BOTTOM/TOP	268435456 bit	2.7 V		8/16	e3			NOR TYPE	.0001 Amp	20 mm	YES	70 ns	3	YES
M29W400DT55N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		256KX16	256K	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48	3.6 V	1.2 mm		12 mm			TOP	4194304 bit	2.7 V			e3			NOR TYPE		18.4 mm		55 ns	3
GE28F320B3BD70	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH				.75 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1 mm		6.964 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		7.286 mm		70 ns	2.7
M29W160EB80ZS3SF	Micron Technology	FLASH	AUTOMOTIVE	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified		BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.