Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W800FT70N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	1	3.6 V	1.2 mm			12 mm	Not Qualified			TOP	8388608 bit	3 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GB6AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V		4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	60 ns	3	YES
M58WR064HL7AZA6F	Micron Technology	FLASH	INDUSTRIAL	80	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	50 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY	BGA80,8X10,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM		R-PBGA-B80							Not Qualified			BOTTOM	67108864 bit			4				NOR TYPE	.00001 Amp		YES	70 ns		NO
MTFDDAT240MAV-2AH12ABYY	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		240GX8	240G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm			29.85 mm					2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
SMC08GCFD6E	Micron Technology	FLASH CARD	INDUSTRIAL	50	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8589934592 words	3.3			8	UNCASED CHIP						85 Cel		8GX8	8G	-40 Cel					UPPER		R-XUUC-N50		3.63 V	4.1 mm			36.4 mm					68719476736 bit	2.97 V	CAN ALSO OPERATE WITH 5V SUPPLY			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		42.8 mm			3.3
M29W160ET80N3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		18.4 mm		80 ns	3
PH28F320W18BD60	Micron Technology	FLASH	INDUSTRIAL	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.75 mm	85 Cel		2MX16	2M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B56		1.95 V	1 mm			7.7 mm	Not Qualified			BOTTOM	33554432 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE		e1			NOR TYPE		9 mm		60 ns	1.8
M45PE10-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	131072 words	3		3/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		128KX8	128K	-40 Cel			Nickel/Palladium/Gold (Ni/Pd/Au)		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8		3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	23 ms	SPI		1048576 bit	2.7 V			e4	30	260	NOR TYPE	.00001 Amp	4.9 mm			2.7
MTFDJAL1T9MBT-2AN16ABYY	Micron Technology	FLASH																																																												3.3
MTFDDAT064MAY-1AH12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		64GX8	64G	0 Cel					DUAL		R-XDMA-N52		3.46 V	3.75 mm			29.85 mm					549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAC512MAM-1K2	Micron Technology	FLASH								CMOS																																													NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W320FB70N3E6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W160EB7AZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
M29W640GH7AZF3E	Micron Technology	FLASH																																																												3
M29F200FB55M6F	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44							Not Qualified			BOTTOM	2097152 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
GE28F256L18T85	Micron Technology	FLASH	OTHER	79	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	27 mA	16777216 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA79,7X13,30		Flash Memories		.75 mm	85 Cel		16MX16	16M	-25 Cel	4,255	YES			BOTTOM		R-PBGA-B79							Not Qualified			TOP	268435456 bit			4				NOR TYPE	.00011 Amp		YES	85 ns		NO
MTFDDAA256MAM-1J11AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
RD48F6000M0YTC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		64MX16	64M	-30 Cel	512	NO			BOTTOM		R-PBGA-B107							Not Qualified			TOP	1073741824 bit			16				NOR TYPE	.000005 Amp		YES	96 ns		NO
M29W640GB90ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		90 ns	3
M29W800FB70N6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	1	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W160FT80N3F6	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	2.7/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
M29W320FB70ZA3E6	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	10 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
MTFDDAT064MAM1J12	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDJAL1T9MBU-2AN1ZABYY	Micron Technology	FLASH																																																												3.3
RC28F160C3TA90	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	90 ns	3	NO
MTFDHAX1T6MCE-1AN1ZABYY	Micron Technology	FLASH MODULE	COMMERCIAL						1	CMOS		UNSPECIFIED		SYNCHRONOUS				3.3			8	MICROELECTRONIC ASSEMBLY						55 Cel		1600GX8	1.6T	0 Cel					UNSPECIFIED		R-XXMA-X		3.564 V										3.036 V	SOLID STATE DRIVE					NAND TYPE
M29W256GL70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDJAK200MBW-2AN16ABYY	Micron Technology	FLASH																																																							SLC NAND TYPE					3.3
MTFDDAA128MAM-1J2AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAA100MAR-1K12AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAT240MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29F200FB5AM62	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	85 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL		R-PDSO-G44		5.5 V	3 mm			12.6 mm	Not Qualified			BOTTOM	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDCAE016SAJ	Micron Technology	FLASH								CMOS																																																				5
MT4F51232M-9T	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			524288 words				32	MICROELECTRONIC ASSEMBLY								512KX32	512K						SINGLE		R-XSMA-N80							Not Qualified				16777216 bit											90 ns	5
M29F160FT5AM6E2	Micron Technology	FLASH																																																												5
M29W640GL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm					67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
M29DW128F6ANF6E	Micron Technology	FLASH	INDUSTRIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		8K,64K	20 mA	8388608 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	16,254	YES		YES	DUAL		R-PDSO-G56							Not Qualified			BOTTOM/TOP	134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	60 ns		YES
GT28F160C3TA110	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B46		3.6 V	1 mm			6.964 mm	Not Qualified			TOP	16777216 bit	2.7 V						NOR TYPE	.000025 Amp	7.286 mm	YES	110 ns	3	NO
MTFDDAK128MAY-1AH1ZAAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					SINGLE		R-XSMA-X22		5.5 V	7 mm			69.85 mm					1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAV120MAV-1AE11ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK960MAV-2AE12ZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					8246337208320 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W800FB7AN3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDDAK100MAR-1K1AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
M29W400FB70N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M29W800FT70N3ST	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm				TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
M29W640GH70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W128GL70ZA1F	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
GT28F160C3BA110	Micron Technology	FLASH	INDUSTRIAL	46	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA46,6X8,30		Flash Memories		.75 mm	85 Cel		1MX16	1M	-40 Cel	8,31	YES			BOTTOM		R-PBGA-B46		3.6 V	1 mm			6.964 mm	Not Qualified			BOTTOM	16777216 bit	2.7 V						NOR TYPE	.000025 Amp	7.286 mm	YES	110 ns	3	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.