Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
RD48F3000P0XTQ0	Micron Technology	FLASH	INDUSTRIAL	80	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA64,10X12,32		Flash Memories	.8 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B80		3.6 V	1.2 mm		8 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; TOP BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000155 Amp	10 mm	YES	85 ns	3	NO
MTFDDAA200MAR-1J1AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W400FB5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
PH28F128L30T85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,2.5/3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B56						Not Qualified		TOP	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
M29W128GL70ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAA400MAR-1K1	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT480MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N52			3.7 mm		29.85 mm											MLC NAND TYPE		50.8 mm			3.3
M29W160ET80N3S	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		80 ns	3
M29W640GB90NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
MTFDDAT064MAY-1AH1ZZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	52		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W128GL60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
M29W160FT80ZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel			TIN SILVER COPPER		BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm			TOP	16777216 bit	2.5 V	TOP BOOT BLOCK		e1			NOR TYPE		8 mm		80 ns	3
MTFDDAK128MAZ-1AE12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					SINGLE	R-XSMA-X22		5.5 V	7 mm		69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W400FT55N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			TOP	4194304 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
MTFDDAT064MAM1J1	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GH7ANA6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAT128MAR-1J1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29F200FB55N3E2	Micron Technology	FLASH	AUTOMOTIVE	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		5.5 V	1.2 mm		12 mm	Not Qualified		BOTTOM	2097152 bit	4.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
MTFDDAC050SAL-1N1AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MT4LSFT3200RH-13EXX	Micron Technology	FLASH MODULE	COMMERCIAL	144		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	SYNCHRONOUS			4194304 words	3.3			64	MICROELECTRONIC ASSEMBLY					70 Cel		4MX64	4M	0 Cel			GOLD		DUAL	R-XDMA-N144		3.6 V				Not Qualified	10 ms		268435456 bit	3 V			e4			NOR TYPE				5.4 ns	3.3
MTFDDAK480MAV-1AH11ABYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAV512MAY-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			549755813888 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		512GX8	512G	0 Cel					DUAL	R-XDMA-N75		3.46 V	3.58 mm		22 mm				4398046511104 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
MTFDDAT064MAY-1AH12ABYY	Micron Technology	FLASH MODULE	INDUSTRIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			68719476736 words	3.3			8	MICROELECTRONIC ASSEMBLY					85 Cel	3-STATE	64GX8	64G	-40 Cel					DUAL	R-XDMA-N52		3.46 V	3.75 mm		29.85 mm				549755813888 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAA512MAM-1J22	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GB60ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
PZ28F064M29EWTX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1 mm		6 mm	Not Qualified		TOP	67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
M29W160ET80ZA3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm			TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm		70 ns	3
MTFDDAT128MAR-1K11AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK240MAV-1AH11AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
MTFDDAA200MAR-1K1AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAT256MAM-1J2AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GL60ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		60 ns	3
M45PE10-VMN6T	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE				1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL	R-PDSO-G8		3.6 V	1.75 mm	33 MHz	3.9 mm	Not Qualified			1048576 bit	2.7 V			e0			NOR TYPE		4.9 mm			2.7
MTFDCAE008SAF-1B2IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	8589934592 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		8GX8	8G	-40 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm		26.6 mm				68719476736 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
MTFDDAC064MAM-1K2AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W160ET70ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm		11 mm			TOP	16777216 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		13 mm		70 ns	3
M29F400FB5AM6E2	Micron Technology	FLASH	INDUSTRIAL	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories	1.27 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL	R-PDSO-G44		5.5 V	3 mm		12.6 mm	Not Qualified		BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			30	260	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
M29W320FB7AN6E6	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	10 mA	2097152 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AE11ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	960GX8	960G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm		69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA100MAR-1K12AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK480MAV-1AE11AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W160FB80N3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		1MX16	1M	-40 Cel			MATTE TIN		DUAL	R-PDSO-G48		3.6 V	1.2 mm		12 mm			BOTTOM	16777216 bit	2.5 V	BOTTOM BOOT BLOCK		e3			NOR TYPE		18.4 mm		80 ns	3
MTFDJAL3T2MBT-2AN16ABYY	Micron Technology	FLASH																																																			SLC NAND TYPE					3.3
M58WT064KT70ZAQ6E	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B88						Not Qualified		TOP	67108864 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO
MTFDDAA512MAM-1K22AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAC128MAM-1K2	Micron Technology	FLASH								CMOS																																									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W400FT5AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm		6 mm	Not Qualified		TOP	4194304 bit	2.7 V	TOP BOOT BLOCK		e1			NOR TYPE	.0001 Amp	8 mm	YES	55 ns	3	YES
RC28F256J3F95	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	50 mA	16777216 words	3	NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	Tin/Lead/Silver (Sn/Pb/Ag)	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm		10 mm	Not Qualified			268435456 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00021 Amp	13 mm	YES	95 ns	2.7	NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.