Micron Technology Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAK120MAV-2AH11ABYY	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29DW256G60ZA1F	Micron Technology	FLASH	COMMERCIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		32K,128K	10 mA	16777216 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories	1 mm	70 Cel		16MX16	16M	0 Cel	8,126	YES		YES	BOTTOM	S-PBGA-B64				Not Qualified		BOTTOM/TOP	268435456 bit							NOR TYPE	.0001 Amp		YES	60 ns		YES
MTFDDAT256MAY-1AH12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		256GX8	256G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				2199023255552 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
M29W640GB90ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, LOW PROFILE		8		1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		90 ns	3
M29W640GL6ANB3E	Micron Technology	FLASH																																																						3
MTFDDAA050MAR-1K1AA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29F200FT55N3T2	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	131072 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	125 Cel		128KX16	128K	-40 Cel	1,2,1,3	YES		YES	DUAL	R-PDSO-G48	5.5 V	1.2 mm	12 mm	Not Qualified		TOP	2097152 bit	4.5 V						NOR TYPE	.00012 Amp	18.4 mm	YES	55 ns	5	YES
M29W640GT70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA100MAR-1K1AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W160ET70ZA3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			TOP	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
MTFDDAT064MAR-1K11AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAK256MBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		256GX8	256G	-40 Cel					SINGLE	R-XSMA-N22	5.5 V	7.2 mm	69.85 mm				2199023255552 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W800FB70ZA3ST	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8		.8 mm	125 Cel		512KX16	512K	-40 Cel					BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDCAE001SAF-1C3IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY					85 Cel		1GX8	1G	-40 Cel					UNSPECIFIED	R-XXMA-X	5.25 V	9.7 mm	26.6 mm				8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29W320ET90ZS6T	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,32	8	Flash Memories	1 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		TOP	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	13 mm	YES	90 ns	3	YES
M29W128GL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified	.00007 ms		131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29F800FT55N6E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48				Not Qualified		TOP	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
MTFDDAK480MAV-1AE1ZAA	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
RD48F4400L0ZDQ0	Micron Technology	FLASH	OTHER	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K		33554432 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories	.8 mm	85 Cel		32MX16	32M	-25 Cel	8, 510	YES	Tin/Lead (Sn/Pb)		BOTTOM	R-PBGA-B88				Not Qualified		BOTTOM/TOP	536870912 bit			4	e0			NOR TYPE			YES	85 ns		NO
MTFDDAV480MAV-1AE12ZZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDCAE002SAJ-1M1T	Micron Technology	FLASH								CMOS																																														5
MTFDDAK120MAV-1AE11ZZYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP														UPPER	R-XUUC-N22		7 mm	69.85 mm									NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			3.3
M29W640GH70ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M29W320DT7AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	85 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified		TOP	33554432 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAK960MAV-1AE12AB	Micron Technology	FLASH								CMOS																																							NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					5
M29W640GH7AZF6F	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		4MX16	4M	-40 Cel	128	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.2 mm	10 mm	Not Qualified			67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GL90NA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
M29W320DB70ZE3T	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories	.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48	3.6 V	1.2 mm	6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
MTFDDAA100MAR-1J1	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAA512MAM-1K21AB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
MTFDDAT128MAZ-1AE12ACHA	Micron Technology	FLASH MODULE	COMMERCIAL	52	DIMM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N52	3.46 V	3.75 mm	29.85 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAV120MAV-1AE11AAYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	120GX8	120G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				1030792151040 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W640GT60NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G56	3.6 V	1.2 mm	14 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
MTFDHAL15T3TDP-2AT1ZABYY	Micron Technology	FLASH
PH28F128L18T85	Micron Technology	FLASH	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES			BOTTOM	R-PBGA-B56				Not Qualified		TOP	134217728 bit			4				NOR TYPE	.00007 Amp		YES	90 ns		NO
MTFDDAV480MAV-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAT480MAV-2AE1ZAB	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					3.3
M29W640GB7ANA6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories	.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W640GT70ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified		TOP	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
GE28F640W30TC85	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories	.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56				Not Qualified		TOP	67108864 bit			4				NOR TYPE	.000021 Amp		YES	85 ns		NO
M29W064FT70N3E	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	85 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm				67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED			18.4 mm		70 ns	3
MTFDDAK064MAY-1AH12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			68719476736 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel		64GX8	64G	0 Cel					SINGLE	R-XSMA-X22	5.5 V	7 mm	69.85 mm				549755813888 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W640GT60NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8		.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G48	3.6 V	1.2 mm	12 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		60 ns	3
MTFDDAK240MAV-1AE12AC	Micron Technology	FLASH								CMOS																																									MLC NAND TYPE					5
MTFDDAV240MAV-1AE11ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY					70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22	5.5 V	7 mm	69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W128GH70ZS1E	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
MTFDDAV128MAY-1AH12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY					70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N75	3.46 V	3.58 mm	22 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W128GH60ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories	1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64	3.6 V	1.4 mm	11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.