Micron Technology Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
M29W160EB80N3S	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		16K,8K,32K,64K	10 mA	1048576 words		YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		1MX16	1M	-40 Cel	1,2,1,31	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	16777216 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
MTFDDAC064MAM-1J12AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					5
MTFDDAT240MAV-2AE11ACYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAT120MAV-2AH11ZZYY	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDCAE001SAF-1B1IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	1073741824 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		1GX8	1G	-40 Cel					UNSPECIFIED		R-XXMA-X		5.25 V	9.7 mm			26.6 mm					8589934592 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29F160FB55M3F2	Micron Technology	FLASH																																																												5
M29W800FB5AZA6F	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29W320DT70N3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES	MATTE TIN	YES	DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			TOP	33554432 bit	2.7 V	TOP BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
RC28F640J3F75B	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	4194304 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	64	YES	Tin/Lead/Silver (Sn/Pb/Ag)	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified				67108864 bit	2.7 V		4/8	e0	30	235	NOR TYPE	.00012 Amp	13 mm	YES	75 ns	2.7	NO
MTFDDAT120MAV-1AE12AAYY	Micron Technology	FLASH	COMMERCIAL	52	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N52			3.7 mm			29.85 mm												MLC NAND TYPE		50.8 mm			3.3
M45PE10S-VMN6TG	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words				8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel					DUAL		R-PDSO-G8		3.6 V	1.75 mm		75 MHz	3.9 mm		23 ms			1048576 bit	2.7 V						NOR TYPE		4.9 mm			2.7
M29W640GH7ANA3E	Micron Technology	FLASH																																																												3
M29W128GSL70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified				134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
RD48F3000P0ZTQEA	Micron Technology
M29W800FB7AZA6ST	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		512KX16	512K	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		8 mm		70 ns	3
MTFDDAT240MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK480MAV-1AE12ABHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAA256MAM-1K2AC	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
MTFDDAT256MAM-1K2AA	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M29W128GL7AZA6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified	.00007 ms			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W320FB80ZASF	Micron Technology	FLASH	AUTOMOTIVE	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	2097152 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	33554432 bit							NOR TYPE	.0001 Amp		YES	80 ns		YES
RD48F5000M0YUC0	Micron Technology	FLASH	OTHER	107	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	50 mA	33554432 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA107,9X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-30 Cel	256	NO			BOTTOM		R-PBGA-B107							Not Qualified			TOP	536870912 bit							NOR TYPE	.00003 Amp		YES	96 ns		NO
M29W640GL6AZF6E	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	85 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm					67108864 bit	2.7 V						NOR TYPE		13 mm		60 ns	3
MTFDDAA064MAM-1J21AC	Micron Technology	FLASH								CMOS																																													NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE					3.3
M29F400FB5AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48							Not Qualified			BOTTOM	4194304 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W640GB70ZA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	10 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		4MX16	4M	-40 Cel	8,127	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK	4/8	e1			NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES
M58BW016FT7ZA3FT	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM		R-PBGA-B80		3.6 V	1.6 mm			10 mm				TOP	16777216 bit	2.7 V						NOR TYPE		12 mm		70 ns	3
MTFDDAT240MAV-1AE12AB	Micron Technology	FLASH MODULE		52	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		240GX8	240G	0 Cel					SINGLE		R-XSMA-N52		3.46 V	3.75 mm			29.85 mm					2061584302080 bit	3.14 V						MLC NAND TYPE		50.8 mm			3.3
MTFDDAK128MBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE		R-XSMA-N22		5.5 V	7.2 mm			69.85 mm					1099511627776 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAV240MAV-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
RC28F256P33BFF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			BOTTOM	268435456 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1			NOR TYPE	.00021 Amp	13 mm	YES	95 ns	3	NO
M45PE10-VMN6	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			131072 words	3			8	SMALL OUTLINE					1.27 mm	85 Cel		128KX8	128K	-40 Cel			TIN LEAD		DUAL		R-PDSO-G8		3.6 V	1.75 mm		33 MHz	3.9 mm	Not Qualified				1048576 bit	2.7 V			e0			NOR TYPE		4.9 mm			2.7
RC28F800C3TA110	Micron Technology	FLASH	INDUSTRIAL	64	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	524288 words	3	NO	1.8/3.3,3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		512KX16	512K	-40 Cel	8,31	YES			BOTTOM		S-PBGA-B64		3.6 V	1.2 mm			10 mm	Not Qualified			TOP	8388608 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK					NOR TYPE	.000025 Amp	13 mm	YES	110 ns	3	NO
RC28F320J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	80 mA	2097152 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES		YES	BOTTOM		S-PBGA-B64							Not Qualified				33554432 bit			4/8		30	235	NOR TYPE	.00012 Amp		YES	75 ns		NO
M29W800FB5AZA6T	Micron Technology	FLASH	INDUSTRIAL	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,8K,32K,64K	20 mA	524288 words		YES	3/3.3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	BOTTOM		R-PBGA-B48							Not Qualified			BOTTOM	8388608 bit							NOR TYPE	.0001 Amp		YES	55 ns		YES
M29W256GH70ZS3E	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			16777216 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	125 Cel		16MX16	16M	-40 Cel					BOTTOM		R-PBGA-B64		3.6 V	1.4 mm			11 mm				BOTTOM/TOP	268435456 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
M29W320DT80ZE6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm				TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M29W160EB70ZS3SE	Micron Technology	FLASH																																																												3
M29W400FT70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G48							Not Qualified			TOP	4194304 bit							NOR TYPE	.0001 Amp		YES	70 ns		YES
M45PE40-VMP6P	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		15 mA	524288 words	3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		512KX8	512K	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8		3.6 V	1 mm	100000 Write/Erase Cycles	75 MHz	5 mm	Not Qualified		SPI		4194304 bit	2.7 V						NOR TYPE	.00001 Amp	6 mm			2.7
M29W640GH90NA3E	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL		R-PDSO-G48		3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
M29W640GT90ZA3F	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM		R-PBGA-B48		3.6 V	1.2 mm			6 mm	Not Qualified			TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		8 mm		90 ns	3
M29F400FB55M3T2	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	262144 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES		YES	DUAL		R-PDSO-G44		5.5 V	3 mm			12.6 mm	Not Qualified			BOTTOM	4194304 bit	4.5 V	BOTTOM BOOT BLOCK			30	235	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAK480MAV-2AE1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		480GX8	480G	0 Cel					SINGLE		R-XSMA-N22		5.5 V	7 mm			69.85 mm					4123168604160 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
M29W800FB7AN6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G48	1	3.6 V	1.2 mm			12 mm	Not Qualified			BOTTOM	8388608 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
MTFDCAE016SAJ-1N1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED										MICROELECTRONIC ASSEMBLY															UNSPECIFIED		R-XXMA-X							Not Qualified									30	260						5
MTFDDAT480MAV-1AE11ZZ	Micron Technology	FLASH								CMOS																																															MLC NAND TYPE					3.3
M58WR032KT70ZAQ6F	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	70 mA	2097152 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	8,63	YES			BOTTOM		R-PBGA-B88							Not Qualified			TOP	33554432 bit			4				NOR TYPE	.00005 Amp		YES	70 ns		NO

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.