Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
N25Q128A11BF840F	Micron Technology	FLASH	INDUSTRIAL	8	SON	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		NO LEAD	SERIAL			20 mA	16777216 words	1.8		1.8	8	SMALL OUTLINE	SOLCC8,.3		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8			100000 Write/Erase Cycles	108 MHz		Not Qualified	SPI		134217728 bit							NOR TYPE	.00001 Amp
N25Q128A11E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	134217728 words	1.8		1.8	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		128MX1	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI		134217728 bit	1.7 V			e1			NOR TYPE	.00001 Amp	8 mm			3
N25Q128A13BSF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	16777216 words	3		3/3.3	8	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		16MX8	16M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI	BOTTOM	134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q128A13ESF40G	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		134217728 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A11ESF40F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	268435456 words	1.8		1.8	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	2 V	2.5 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified	SPI		268435456 bit	1.7 V	SPI-COMPATIBLE SERIAL BUS INTERFACE			NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.00002 Amp	10.3 mm			1.8
N25Q256A13EF8A0F	Micron Technology	FLASH	AUTOMOTIVE	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE					1.27 mm	125 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-N8	3.6 V	1 mm		108 MHz	6 mm				268435456 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE		8 mm			3
N25Q512A83G1240F	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		15 mA	536870912 words	3			1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		512MX1	512M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm		SPI		536870912 bit	2.7 V			e1	30	260	NOR TYPE	.0005 Amp	8 mm			3
NAND256W3A2BNXE	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	33554432 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		32MX8	32M	-40 Cel	2K	YES	MATTE TIN	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified			268435456 bit	2.7 V		512	e3			SLC NAND TYPE	.00005 Amp	18.4 mm		45 ns	3	NO
NAND512R3A2SZA6E	Micron Technology	FLASH	INDUSTRIAL	63	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX8	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B63	1.95 V	1.05 mm			9 mm				536870912 bit	1.7 V			e1	30	260	SLC NAND TYPE		11 mm			1.8
PC28F00AG18FE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS	128K	50 mA	67108864 words	1.8	NO	1.8	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	512	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified			1073741824 bit	1.7 V			e1			NOR TYPE	.000185 Amp	10 mm	YES	96 ns	2.7	NO
PC28F00AP30BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	67108864 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	4,1023	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			8 mm	Not Qualified		BOTTOM	1073741824 bit	1.7 V	BOTTOM BOOT	16	e1			NOR TYPE	.00024 Amp	10 mm	YES	100 ns	3	NO
PC28F00AP33EFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			67108864 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm				1073741824 bit	2.3 V	IT ALSO OPERATES IN ASYNCHRONOUS MODE		e1	30	260			10 mm		95 ns	3
PC28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	54 mA	8388608 words		NO	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM		S-PBGA-B64						Not Qualified			134217728 bit			4/8		30	260	NOR TYPE	.00012 Amp		YES	75 ns		NO
PC28F128M29EWLA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	25 mA	8388608 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			134217728 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	13 mm	YES	65 ns	3	YES
PC28F128P30BF65A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1	30	260	NOR TYPE	.000055 Amp	13 mm	YES	65 ns	1.8	NO
PC28F128P33TF60A	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	8388608 words	3	NO	2.5/3,3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			8 mm	Not Qualified		TOP	134217728 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	8	e1	30	260	NOR TYPE	.002 Amp	10 mm	YES	60 ns	3	NO
PC48F4400P0VB0EF	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM/TOP	536870912 bit	1.7 V	IT ALSO HAVE ASYNCHRONOUS OPERATING MODE		e1	30	260	NOR TYPE	.00042 Amp	13 mm	YES	17 ns	1.8	NO
RC28F128P30T85A	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	8388608 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM		S-PBGA-B64						Not Qualified		TOP	134217728 bit			4				NOR TYPE	.000075 Amp		YES	85 ns		NO
RC28F256P30BFA	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	16	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	TIN LEAD SILVER		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified		BOTTOM	268435456 bit	1.7 V	ASYNCHRONOUS READ MODE		e0			NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
TE28F160C3BD70A	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	4K,32K	18 mA	1048576 words	3	NO		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20				.5 mm	85 Cel		1MX16	1M	-40 Cel	8,31		TIN LEAD		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified		BOTTOM	16777216 bit	2.7 V	USER-SELECTABLE 3V OR 12V VPP; BOTTOM BOOT BLOCK		e0			NOR TYPE	.00002 Amp	18.4 mm		70 ns	3
MTFDDAT240MAV-2AE1ZAC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
PZ28F064M29EWLX	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		4MX16	4M	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			67108864 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
M29W640GT6AZA3E	Micron Technology	FLASH																																																										3
M29W800FB70ZA3SE	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		512KX16	512K	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK		e1					8 mm		70 ns	3
M29W256GH60N1E	Micron Technology	FLASH	COMMERCIAL	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8	Flash Memories		.5 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	18.4 mm	YES	60 ns	3	YES
MTFDDAK120MAV-1AE1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				1030792151040 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			5
M58BW016FT8T3FF	Micron Technology	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS			524288 words	3			32	FLATPACK					.8 mm	125 Cel		512KX32	512K	-40 Cel					QUAD		R-PQFP-G80	3.6 V	3.4 mm			14 mm			TOP	16777216 bit	2.7 V						NOR TYPE		20 mm		80 ns	3
MTFDDAA100MAR-1K11AB	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
MTFDDAK480MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			515396075520 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	480GX8	480G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MT8F832M-7T	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			8388608 words				32	MICROELECTRONIC ASSEMBLY								8MX32	8M						SINGLE		R-XSMA-N80						Not Qualified			268435456 bit											70 ns	5
MTFDDAV240MAV-1AE12ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAC256MAM-1K1	Micron Technology	FLASH	COMMERCIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										MICROELECTRONIC ASSEMBLY															UNSPECIFIED		R-XXMA-N		9.7 mm			69.85 mm											MLC NAND TYPE		100.2 mm			5
MTFDDAK960MAV-2AH1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAK960MAV-1AE12ABYY	Micron Technology	FLASH	COMMERCIAL	22	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD										UNCASED CHIP															UPPER		R-XUUC-N22		7 mm			69.85 mm											MLC NAND TYPE		100.5 mm			3.3
M29W128GH60ZS3F	Micron Technology	FLASH	AUTOMOTIVE	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	125 Cel		8KX16	8K	-40 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
PZ28F032M29EWHA	Micron Technology	FLASH	INDUSTRIAL	48	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	25 mA	2097152 words	3	YES	3/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	85 Cel		2MX16	2M	-40 Cel	64	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B48	3.6 V	1 mm			6 mm	Not Qualified			33554432 bit	2.7 V		8/16	e1			NOR TYPE	.00012 Amp	8 mm	YES	65 ns	3	YES
MTFDDAK480MBP-2AN16ABYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	XFM	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					515396075520 words	5			8	FLANGE MOUNT						70 Cel		480GX8	480G	0 Cel		NO			UNSPECIFIED		R-XXFM-X22	5.5 V	7 mm			69.85 mm				4123168604160 bit	4.5 V						MLC NAND TYPE		100.45 mm			5	NO
MTFDDAK256MAZ-1AE12AAHA	Micron Technology	FLASH MODULE	COMMERCIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS			274877906944 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		256GX8	256G	0 Cel					SINGLE		R-XSMA-X22	5.5 V	7 mm			69.85 mm				2199023255552 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
PH28F128L18B85	Micron Technology	FLASH	OTHER	56	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	50 mA	8388608 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA56,7X8,30	8	Flash Memories		.75 mm	85 Cel		8MX16	8M	-25 Cel	4,127	YES	TIN SILVER COPPER		BOTTOM		R-PBGA-B56	2 V	1 mm			7.7 mm	Not Qualified		BOTTOM	134217728 bit	1.7 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE	4	e1			NOR TYPE	.00007 Amp	9 mm	YES	85 ns	1.8	NO
MTFDDAT240MAV-1AE11ZYY	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAK960MAV-1AE1ZZZYY	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			1030792151040 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				8246337208320 bit	4.5 V						MLC NAND TYPE		100.5 mm			5
MTFDDAT120MAV-2AH1ZAA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					3.3
M29F800FB55M32	Micron Technology	FLASH	AUTOMOTIVE	44	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	30 mA	524288 words	5	YES	5	16	SMALL OUTLINE	SOP44,.63	8	Flash Memories		1.27 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL		R-PDSO-G44	5.5 V	3 mm			12.6 mm	Not Qualified		BOTTOM	8388608 bit	4.5 V				30	235	NOR TYPE	.00012 Amp	28.5 mm	YES	55 ns	5	YES
MTFDDAK120MAV-1AE12AB	Micron Technology	FLASH MODULE		22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			128849018880 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		120GX8	120G	0 Cel					SINGLE		R-XSMA-N22	5.5 V	7 mm			69.85 mm				1030792151040 bit	4.5 V				NOT SPECIFIED	NOT SPECIFIED	MLC NAND TYPE		100.5 mm			5
MTFDDAK240MAV-2AE11AC	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
M29W160EB70ZA3	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	125 Cel		1MX16	1M	-40 Cel					BOTTOM		R-PBGA-B48	3.6 V	1.2 mm			6 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		8 mm		70 ns	3
MTFDDAK480MAV-1AH1ZAA	Micron Technology	FLASH								CMOS																																													MLC NAND TYPE					5
RC28F00BM29EWH	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	134217728 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified			2147483648 bit	2.7 V		16/32	e0			NOR TYPE	.00048 Amp	13 mm	YES	100 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.