Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Serial Bus Type	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28F016S5VG-9	Micron Technology	FLASH	COMMERCIAL	40	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	64K	50 mA	2097152 words	5	NO	5	8	SMALL OUTLINE, THIN PROFILE	TSSOP40,.8,20		Flash Memories		.5 mm	70 Cel		2MX8	2M	0 Cel	32	YES	TIN LEAD	YES	DUAL		R-PDSO-G40	5.5 V	1.2 mm			10 mm	Not Qualified		16777216 bit	4.5 V	DEEP POWER DOWN; USER CONFIGURABLE 5V OR 12V VPP		e0			NOR TYPE	.00001 Amp	18.4 mm		90 ns	5	NO
MT28F320J3FS-11MET	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	80 mA	2097152 words	3	NO	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		2MX16	2M	-40 Cel	32	YES	TIN LEAD SILVER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm	Not Qualified		33554432 bit	2.7 V		4/8	e0			NOR TYPE	.00012 Amp	13 mm	YES	110 ns	2.7	NO
MT29F16G08ADACAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified		17179869184 bit	2.7 V		4K		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F16G08CBACAWP:C	Micron Technology	FLASH																																																				SLC NAND TYPE					3.3
MT29F1G01ABAFDSF-AAT:F	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	ASYNCHRONOUS			1073741824 words	3.3			1	SMALL OUTLINE						105 Cel		1GX1	1G	-40 Cel					DUAL		R-PDSO-G16								1073741824 bit					NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					3.3
MT29F1G08AACWPET:C	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			134217728 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		128MX8	128M	-40 Cel			TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm			1073741824 bit	2.7 V			e3			SLC NAND TYPE		18.4 mm			3.3
MT29F1G08ABBDAHC-IT:D	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	134217728 words	1.8	NO	1.8	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX8	128M	-40 Cel	1K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			10.5 mm	Not Qualified		1073741824 bit	1.7 V		2K	e1			SLC NAND TYPE	.00005 Amp	13 mm		25 ns	1.8	NO
MT29F1G16ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm			1073741824 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G08ABAEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	35 mA	268435456 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		256MX8	256M	-40 Cel	2K	YES	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified		2147483648 bit	2.7 V		2K	e1	30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns	2.7	NO
MT29F2G08ABAGAWP-IT:GTR	Micron Technology	FLASH	INDUSTRIAL				PLASTIC/EPOXY		1	CMOS				ASYNCHRONOUS			268435456 words				8							85 Cel		256MX8	256M	-40 Cel															2147483648 bit							SLC NAND TYPE
MT29F2G08ABBGAH4-IT:G	Micron Technology	FLASH																																																		30	260	SLC NAND TYPE					1.8
MT29F2G16ABBEAH4-AAT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	105 Cel		128MX16	128M	-40 Cel					BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm			2147483648 bit	1.7 V						SLC NAND TYPE		11 mm			1.8
MT29F2G16ABBEAH4-IT:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	20 mA	134217728 words	1.8	NO	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		128MX16	128M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm	Not Qualified		2147483648 bit	1.7 V		1K		30	260	SLC NAND TYPE	.00005 Amp	11 mm		25 ns	1.8	NO
MT29F32G08CBACAWP:C	Micron Technology
MT29F4G08ABADAH4-IT	Micron Technology	FLASH																																																		NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE					2.7
MT29F4G08ABAEAWP:E	Micron Technology	FLASH																																																				SLC NAND TYPE					3.3
MT29F4G08ABBFAH4-AIT:F	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	256K	35 mA	536870912 words	1.8	NO		8	GRID ARRAY, VERY THIN PROFILE	BGA63,10X12,32			10	.8 mm	85 Cel		512MX8	512M	-40 Cel	2K	YES		YES	BOTTOM		R-PBGA-B63	1.95 V	1 mm	100000 Write/Erase Cycles		9 mm			4294967296 bit	1.7 V		4K				SLC NAND TYPE	.00005 Amp	11 mm				NO
MT29F4G16ABADAH4:D	Micron Technology	FLASH	COMMERCIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	35 mA	268435456 words	3.3	NO	3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	70 Cel		256MX16	256M	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B63	3.6 V	1 mm			9 mm	Not Qualified		4294967296 bit	2.7 V		1K		30	260	SLC NAND TYPE	.0001 Amp	11 mm		25 ns		NO
MT29F8G08ABABAWP-AITX:B	Micron Technology	FLASH																																																				SLC NAND TYPE					3.3
MT35XU01GBBA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		128MX8	128M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	1073741824 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA1G12-0AUTTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	125 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	2147483648 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MT35XU02GCBA2G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			8	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX8	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		200 MHz	6 mm			2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU256ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			268435456 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		256MX1	256M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm			268435456 bit	1.7 V			e1	30	260			8 mm			1.8
MT35XU512ABA1G12-0SITTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			67108864 words	1.8			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	85 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	2 V	1.2 mm	100000 Write/Erase Cycles	200 MHz	6 mm		SPI	536870912 bit	1.7 V			e1	30	260	NOR TYPE		8 mm			1.8
MTFC16GAKAEEF-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	169	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words		NO		8	GRID ARRAY, THIN PROFILE	BGA169,14X28,20				.5 mm	105 Cel		16GX8	16G	-40 Cel		NO	GOLD OVER NICKEL	YES	BOTTOM		R-PBGA-B169	3.6 V	1.2 mm		52 MHz	14 mm			137438953472 bit	2.7 V			e4			NAND TYPE		18 mm			2.7	NO
MTFC16GAPALNA-AITTR	Micron Technology	FLASH CARD																																	TIN SILVER COPPER																	30	260						2.7
MTFC16GJGEF-AITZ	Micron Technology	FLASH CARD	INDUSTRIAL	169	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA169,14X14,20				.5 mm	85 Cel		16GX8	16G	-40 Cel					BOTTOM		R-PBGA-B169	3.6 V	1.364 mm		52 MHz	14 mm			137438953472 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFC32GAKAECN-AIT	Micron Technology	FLASH CARD																																																									2.7
MTFC32GAKAEEF-AIT	Micron Technology	FLASH CARD																																	Gold (Au) - with Nickel (Ni) barrier																e4	30	260						2.7
MTFC32GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			34359738368 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		32GX8	32G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	.9 mm		200 MHz	11.5 mm			274877906944 bit	2.7 V			e1	30	260	NAND TYPE		13 mm
MTFC4GLWDM-4MAATZ	Micron Technology	FLASH CARD
MTFC4GMWDM-3MAITATR	Micron Technology	FLASH																																																		NOT SPECIFIED	NOT SPECIFIED						2.7
MTFC64GAPALNA-AITTR	Micron Technology	FLASH CARD																																	TIN SILVER COPPER																	30	260						2.7
MTFC64GASAONS-AITES	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words	3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	95 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	1.461 mm		52 MHz	11.5 mm			549755813888 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		13 mm
MTFC64GASAQHD-IT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			5	.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	3.6 V	.9 mm		200 MHz	11.5 mm			549755813888 bit	2.7 V						NAND TYPE		13 mm
MTFC64GAZAQHD-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20				.5 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B153	1.95 V	.9 mm		200 MHz	11.5 mm			549755813888 bit	1.7 V						NAND TYPE		13 mm			1.8
MTFC64GAZAQHD-WT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	85 Cel		64GX8	64G	-25 Cel					BOTTOM		R-PBGA-B153	3.6 V	.9 mm			11.5 mm			549755813888 bit	2.7 V						NAND TYPE		13 mm
MTFC8GACAALT-4MITTR	Micron Technology	FLASH		100	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words	3.3			8	GRID ARRAY, THIN PROFILE	BGA100,10X17,40				1 mm	85 Cel	OPEN-DRAIN	8GX8	8G	-40 Cel		NO	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B100	3.6 V	1.2 mm		52 MHz	14 mm			68719476736 bit	2.7 V			e1	30	260	MLC NAND TYPE		18 mm			3.3	NO
MTFC8GACAENS-K1AIT	Micron Technology	FLASH CARD																																																		NOT SPECIFIED	NOT SPECIFIED						2.7
MTFC8GLWDQ-3MAITZ	Micron Technology	FLASH CARD	INDUSTRIAL	100	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			8589934592 words				8	GRID ARRAY, LOW PROFILE	BGA100,10X17,40				1 mm	85 Cel		8GX8	8G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1.703 mm		52 MHz	14 mm			68719476736 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NAND TYPE		18 mm
MTFDDAK200MAN-1S1AA	Micron Technology	FLASH								CMOS																																												MLC NAND TYPE					5
MTFDHBE7T6TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			8444249301319 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		7.68TX8	7.68T	0 Cel					UNSPECIFIED		R-XXMA-N								67553994410557 bit							TLC NAND TYPE
MTFDHBE960TDF-1AW12ABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD		ASYNCHRONOUS			1030792151040 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-N								8246337208320 bit							TLC NAND TYPE
MTFDJAK800MBS-2AN16FCYY	Micron Technology	FLASH																																																									3.3
MTSD064AHC6MS-1WT	Micron Technology	FLASH CARD			DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS			68719476736 words				8	UNCASED CHIP						85 Cel		64GX8	64G	-25 Cel					UPPER		R-XUUC-N								549755813888 bit							NOR TYPE
MTSD256AKC7MS-1WT	Micron Technology																																																			NOT SPECIFIED	NOT SPECIFIED
N25Q032A11ESE40G	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			1048576 words	1.8			32	SMALL OUTLINE					1.27 mm	85 Cel		1MX32	1M	-40 Cel					DUAL		S-PDSO-G8	2 V	2.16 mm		108 MHz	5.285 mm			33554432 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED			5.285 mm			1.8
N25Q032A13E1240E	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	GRID ARRAY, THIN PROFILE	BGA24,5X5,40		Flash Memories	20	1 mm	85 Cel		32MX1	32M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE/SOFTWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	108 MHz	6 mm	Not Qualified	SPI	33554432 bit	2.7 V			e1			NOR TYPE	.0001 Amp	8 mm			3

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.