Micron Technology Flash Memory 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	Write Protection	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Maximum Write Cycle Time (tWC)	Serial Bus Type	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MT28EW01GABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			67108864 words	3			16	GRID ARRAY, LOW PROFILE					1 mm	85 Cel		64MX16	64M	-40 Cel					BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm					1073741824 bit	2.7 V				30	260			13 mm		95 ns	3
MT28EW128ABA1LPC-0SIT	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			8388608 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	85 Cel		8MX16	8M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm					134217728 bit	2.7 V			e1	30	260	NOR TYPE		13 mm		70 ns	3
MT28EW256ABA1HJS-0SITTR	Micron Technology	FLASH		56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		50 mA	16777216 words	3	YES		16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP56,.8,20	8		20	.5 mm	85 Cel	3-STATE	16MX16	16M	-40 Cel		NO		YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm	100000 Write/Erase Cycles		14 mm					268435456 bit	2.7 V		16				NOR TYPE	.000135 Amp	18.4 mm	YES	70 ns	3	YES
MT29F128G08CFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPIT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	85 Cel		16GX8	16G	-40 Cel			Matte Tin (Sn)		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3	30	260	MLC NAND TYPE		18.4 mm			2.7
MT29F128G08CFAAAWPZ:A	Micron Technology	FLASH	COMMERCIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			17179869184 words	3.3			8	SMALL OUTLINE, THIN PROFILE					.5 mm	70 Cel		16GX8	16G	0 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm					137438953472 bit	2.7 V			e3			MLC NAND TYPE		18.4 mm			2.7
MT29F16G08ABCCBH1-10:C	Micron Technology	FLASH	COMMERCIAL	100	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		512K	50 mA	2147483648 words		NO	3/3.3	8	GRID ARRAY	BGA100,10X17,40		Flash Memories		1 mm	70 Cel		2GX8	2G	0 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100						Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			20 ns		NO
MT29F16G08ABCCBH1-10IT:C	Micron Technology	FLASH	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	512K	50 mA	2147483648 words	3.3	NO	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40		Flash Memories		1 mm	85 Cel		2GX8	2G	-40 Cel	4K	YES		YES	BOTTOM		R-PBGA-B100	3.6 V	1 mm			12 mm	Not Qualified				17179869184 bit	2.7 V		4K				SLC NAND TYPE	.00005 Amp	18 mm		20 ns	2.7	NO
MT29F16G08ADBCAH4-IT:C	Micron Technology	FLASH	INDUSTRIAL	63	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		256K	20 mA	2147483648 words	1.8	NO	1.8	8	GRID ARRAY, FINE PITCH	BGA63,10X12,32		Flash Memories		.8 mm	85 Cel		2GX8	2G	-40 Cel	8K	YES		YES	BOTTOM		R-PBGA-B63						Not Qualified				17179869184 bit			4K				SLC NAND TYPE	.00005 Amp			30 ns	1.8	NO
MT29F1G08ABBEAH4-AITX:E	Micron Technology	FLASH	INDUSTRIAL	63	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			134217728 words	1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.8 mm	85 Cel		128MX8	128M	-40 Cel					BOTTOM		R-PBGA-B63	1.95 V	1 mm			9 mm					1073741824 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		11 mm			1.8
MT29F1T08CUCCBH8-6R:C	Micron Technology	FLASH	COMMERCIAL	152	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS/ASYNCHRONOUS			137438953472 words	3.3			8	GRID ARRAY, LOW PROFILE					1 mm	70 Cel		128GX8	128G	0 Cel					BOTTOM		R-PBGA-B152	3.6 V	1.4 mm			14 mm					1099511627776 bit	2.7 V						MLC NAND TYPE		18 mm			3.3
MT29F256G08CJABBWP-12IT:B	Micron Technology	FLASH																																																						MLC NAND TYPE					3.3
MT29F32G08ABAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	4294967296 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		4GX8	4G	0 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified				34359738368 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP-IT:A	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	1M	50 mA	8589934592 words	3.3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		8GX8	8G	-40 Cel	8K	YES	Tin (Sn)	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				68719476736 bit	2.7 V		8K	e3			MLC NAND TYPE	.00001 Amp	18.4 mm		20 ns	3.3	NO
MT29F64G08AFAAAWP-Z:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F64G08AFAAAWP:A	Micron Technology	FLASH	COMMERCIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		1M	50 mA	8589934592 words		NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	70 Cel		8GX8	8G	0 Cel	8K	YES		YES	DUAL		R-PDSO-G48						Not Qualified				68719476736 bit			8K				SLC NAND TYPE	.00001 Amp			20 ns		NO
MT29F8G16ABACAWP-IT:C	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL		128K	35 mA	536870912 words		NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		512MX16	512M	-40 Cel	4K	YES		YES	DUAL		R-PDSO-G48						Not Qualified				8589934592 bit			2K				SLC NAND TYPE	.0001 Amp			25 ns	3.3	NO
MT35XL512ABA1G12-0AAT	Micron Technology	FLASH	INDUSTRIAL	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			536870912 words	3			1	GRID ARRAY, THIN PROFILE					1 mm	105 Cel		512MX1	512M	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	3.6 V	1.2 mm		133 MHz	6 mm					536870912 bit	2.7 V			e1	30	260			8 mm			3
MT35XL512ABA1G12-0AATTR	Micron Technology	FLASH		24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			67108864 words	3			8	GRID ARRAY, THIN PROFILE	BGA24,5X5,40			20	1 mm	105 Cel		64MX8	64M	-40 Cel			TIN SILVER COPPER		BOTTOM	HARDWARE	R-PBGA-B24	3.6 V	1.2 mm	100000 Write/Erase Cycles	133 MHz	6 mm			SPI		536870912 bit	2.7 V			e1	30	260	NOR TYPE		8 mm			3
MT35XU02GCBA1G12-0AUT	Micron Technology	FLASH	AUTOMOTIVE	24	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SERIAL	SYNCHRONOUS			2147483648 words	1.8			1	GRID ARRAY, THIN PROFILE					1 mm	125 Cel		2GX1	2G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B24	2 V	1.2 mm		166 MHz	6 mm					2147483648 bit	1.7 V			e1	30	260			8 mm			1.8
MTFC128GAPALNS-AAT	Micron Technology	FLASH CARD	INDUSTRIAL	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			137438953472 words				8	GRID ARRAY, THIN PROFILE, FINE PITCH					.5 mm	105 Cel		128GX8	128G	-40 Cel			TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	1.2 mm			11.5 mm					1099511627776 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GAKAEJP-4MIT	Micron Technology	FLASH CARD	INDUSTRIAL	153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH					.5 mm	85 Cel		16GX8	16G	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B153	3.6 V	1 mm			11.5 mm					137438953472 bit	2.7 V			e1	30	260			13 mm			2.7
MTFC16GAPALBH-AITTR	Micron Technology	FLASH CARD																																	TIN SILVER COPPER																			30	260						2.7
MTFC16GJDEC-2MWT	Micron Technology	FLASH CARD	OTHER	169	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			17179869184 words	3.3	NO		8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA169,14X28,20				.5 mm	85 Cel		16GX8	16G	-25 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B169	3.6 V	.8 mm		52 MHz	14 mm					137438953472 bit	2.7 V						MLC NAND TYPE		18 mm			3.3	NO
MTFC4GLGDM-AITATR	Micron Technology	FLASH CARD																																																				NOT SPECIFIED	NOT SPECIFIED						2.7
MTFC64GAPALHT-AIT	Micron Technology	FLASH CARD	INDUSTRIAL	100	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE	BGA100,10X17,40			5	1 mm	85 Cel		64GX8	64G	-40 Cel					BOTTOM		R-PBGA-B100	3.6 V	1 mm		200 MHz	14 mm					549755813888 bit	2.7 V						NAND TYPE		18 mm
MTFC64GASAQHD-AAT	Micron Technology	FLASH CARD		153	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q104	BALL	PARALLEL	SYNCHRONOUS			68719476736 words				8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA153,14X14,20			1	.5 mm	105 Cel		64GX8	64G	-40 Cel		NO	TIN SILVER COPPER		BOTTOM		R-PBGA-B153	3.6 V	.9 mm		200 MHz	11.5 mm					549755813888 bit	2.7 V			e1	30	260	NAND TYPE		13 mm				NO
MTFDHBM1T0TDQ-1AT12ATYY	Micron Technology	FLASH MODULE	INDUSTRIAL			RECTANGULAR	UNSPECIFIED	YES	1	CMOS		BALL		ASYNCHRONOUS			1099511627776 words				8							105 Cel		1TX8	1T	-40 Cel					BOTTOM		R-XBGA-B										8796093022208 bit							TLC NAND TYPE
MTFDKCC960TFR-1BC1ZABYY	Micron Technology	FLASH MODULE			XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED					1030792151040 words				8	MICROELECTRONIC ASSEMBLY						70 Cel		960GX8	960G	0 Cel					UNSPECIFIED		R-XXMA-X										8246337208320 bit							TLC NAND TYPE
N25Q032A13EF640E	Micron Technology	FLASH	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SERIAL	SYNCHRONOUS		20 mA	33554432 words	3		3/3.3	1	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		Flash Memories	20	1.27 mm	85 Cel		32MX1	32M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-N8	3.6 V	1 mm	100000 Write/Erase Cycles	108 MHz	5 mm	Not Qualified		SPI		33554432 bit	2.7 V				30	260	NOR TYPE	.0001 Amp	6 mm			2.7
N25Q064A13ESED0E	Micron Technology	FLASH	INDUSTRIAL	8	SOP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	67108864 words	3		3/3.3	1	SMALL OUTLINE	SOP8,.3		Flash Memories	20	1.27 mm	85 Cel		64MX1	64M	-40 Cel					DUAL	HARDWARE/SOFTWARE	S-PDSO-G8	3.6 V	2.16 mm	100000 Write/Erase Cycles	108 MHz	5.285 mm	Not Qualified		SPI		67108864 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	5.285 mm			2.7
N25Q128A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		20 mA	134217728 words	3		3/3.3	1	SMALL OUTLINE	SOP16,.4		Flash Memories	20	1.27 mm	85 Cel		128MX1	128M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G16	3.6 V	2.65 mm	100000 Write/Erase Cycles	108 MHz	7.5 mm	Not Qualified		SPI		134217728 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	10.3 mm			3
N25Q256A13ESF40E	Micron Technology	FLASH	INDUSTRIAL	16	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS			268435456 words	3			1	SMALL OUTLINE					1.27 mm	85 Cel		256MX1	256M	-40 Cel					DUAL		R-PDSO-G16	3.6 V	2.65 mm		108 MHz	7.5 mm					268435456 bit	2.7 V				30	260	NOR TYPE		10.3 mm			3
NAND512W3A2SN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K	20 mA	64094208 words	3	NO	3/3.3	8	SMALL OUTLINE, THIN PROFILE	TSSOP48,.8,20		Flash Memories		.5 mm	85 Cel		64MX8	64M	-40 Cel	4K	YES	NICKEL PALLADIUM GOLD	YES	DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm	Not Qualified				512753664 bit	2.7 V		512	e4	30	260	SLC NAND TYPE	.00005 Amp	18.4 mm		35 ns	3	NO
PC28F00AM29EWHA	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	31 mA	67108864 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		64MX16	64M	-40 Cel	1K	YES	Tin/Silver/Copper (Sn/Ag/Cu)	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm			11 mm	Not Qualified				1073741824 bit	2.7 V		16/32	e1	30	260	NOR TYPE	.00024 Amp	13 mm	YES	100 ns	3	YES
PC28F256P30B85F	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	16777216 words		NO	1.8,1.8/3.3	16	GRID ARRAY	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES			BOTTOM		S-PBGA-B64						Not Qualified			BOTTOM	268435456 bit			4				NOR TYPE	.000115 Amp		YES	85 ns		NO
PC28F256P30TFE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	16777216 words	1.8	NO	1.8,1.8/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	4,255	YES	Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	2 V	1.2 mm			10 mm	Not Qualified			TOP	268435456 bit	1.7 V			e1	30	260	NOR TYPE	.00021 Amp	13 mm	YES	100 ns	1.8	NO
PC48F4400P0TB0EE	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			33554432 words	3			16	GRID ARRAY, THIN PROFILE					1 mm	85 Cel		32MX16	32M	-40 Cel			Tin/Silver/Copper (Sn/Ag/Cu)		BOTTOM		R-PBGA-B64	3.6 V	1.2 mm			10 mm				BOTTOM	536870912 bit	2.3 V	BOTTOM BOOT BLOCK, SYNCHRONOUS BURST MODE OPERATION ALSO AVAILABLE		e1	30	260			13 mm		95 ns	3
PF48F4400P0VBQEA	Micron Technology	FLASH	INDUSTRIAL	88	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	16K,64K	31 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA88,8X12,32	16	Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM		R-PBGA-B88	2 V	1 mm			8 mm	Not Qualified			BOTTOM/TOP	536870912 bit	1.7 V	ASYNCHRONOUS READ MODE			30	260	NOR TYPE	.00042 Amp	11 mm	YES	100 ns	1.8	NO
JS28F128J3D75A	Micron Technology	FLASH	INDUSTRIAL	56	TSOP1	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	128K	54 mA	8388608 words	3	NO	3/3.3	16	SMALL OUTLINE, THIN PROFILE	TSSOP56,.8,20	8	Flash Memories		.5 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	DUAL		R-PDSO-G56	3.6 V	1.2 mm			14 mm	Not Qualified				134217728 bit	2.7 V		4/8		30	260	NOR TYPE	.00012 Amp	18.4 mm	YES	75 ns	2.7	NO
M25P80-VMN3PB	Micron Technology	FLASH	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	SERIAL	SYNCHRONOUS		15 mA	8388608 words			3/3.3	1	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	125 Cel		8MX1	8M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		8388608 bit	2.7 V				NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	4.9 mm			2.7
M25PX16-VMN6P	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel					DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V				30	260	NOR TYPE	.00001 Amp	4.9 mm			3
M25PX16-VMN6TP	Micron Technology	FLASH	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SERIAL	SYNCHRONOUS		15 mA	2097152 words	2.7		2.5/3.3	8	SMALL OUTLINE	SOP8,.25		Flash Memories	20	1.27 mm	85 Cel		2MX8	2M	-40 Cel			NICKEL PALLADIUM GOLD		DUAL	HARDWARE/SOFTWARE	R-PDSO-G8	3.6 V	1.75 mm	100000 Write/Erase Cycles	75 MHz	3.9 mm	Not Qualified	15 ms	SPI		16777216 bit	2.3 V			e4			NOR TYPE	.00001 Amp	4.9 mm			3
M29W640GT70N3F	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		4MX16	4M	-40 Cel			MATTE TIN		DUAL		R-PDSO-G48	3.6 V	1.2 mm			12 mm				TOP	67108864 bit	2.7 V			e3			NOR TYPE		18.4 mm		70 ns	3
MT25QL128ABB1ESE-0AUTTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						3
MT25QU128ABA8E54-0SIT	Micron Technology	FLASH	INDUSTRIAL	15	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	SERIAL	SYNCHRONOUS			134217728 words	1.8			1	GRID ARRAY						85 Cel		128MX1	128M	-40 Cel					BOTTOM		S-PBGA-B15	2 V			166 MHz						134217728 bit	1.7 V				NOT SPECIFIED	NOT SPECIFIED						1.8
MT25QU512ABB8ESF-0AATTR	Micron Technology	FLASH																																																				NOT SPECIFIED	NOT SPECIFIED						1.8
MT28EW128ABA1LPC-0SITTR	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	64K	50 mA	8388608 words	3	YES		16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8		20	1 mm	85 Cel		8MX16	8M	-40 Cel	2K	NO	TIN SILVER COPPER	YES	BOTTOM		R-PBGA-B64	3.6 V	1.4 mm	100000 Write/Erase Cycles		11 mm					134217728 bit	2.7 V		16	e1	30	260	NOR TYPE	.00012 Amp	13 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.