Micron Technology Flash Memory 2,400+

Reset All

Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Sector Size (Words)	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Toggle Bit	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Alternate Memory Width	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	No. of Sectors/Size	Command User Interface	Terminal Finish	Ready or Busy	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Maximum Write Cycle Time (tWC)	Boot Block	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	Page Size (words)	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Common Flash Interface	Maximum Access Time	Programming Voltage (V)	Data Polling
MTFDDAT032MAM1J11	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GT90NB3F	Micron Technology	FLASH	AUTOMOTIVE	56	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		4MX16	4M	-40 Cel					DUAL	R-PDSO-G56		3.6 V	1.2 mm	14 mm	Not Qualified		TOP	67108864 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		90 ns	3
MTFDDAA050MAR-1J11AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK128MBD-AAH12ITYYES	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		128GX8	128G	-40 Cel					SINGLE	R-XSMA-N22		5.5 V	7.2 mm	69.85 mm				1099511627776 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
M29W320ET90ZS1T	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm			TOP	33554432 bit	2.7 V						NOR TYPE		13 mm		90 ns	3
MTFDDAK960MAV-2AE12AAYY	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W640GT6ANB3F	Micron Technology	FLASH																																																								3
M29W800FB70N3SF	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
RD48F4400P0VBQ0B	Micron Technology	FLASH	INDUSTRIAL	88	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	51 mA	33554432 words		NO	1.8,1.8/3.3	16	GRID ARRAY, FINE PITCH	BGA88,8X12,32		Flash Memories		.8 mm	85 Cel		32MX16	32M	-40 Cel	8, 510	YES			BOTTOM	R-PBGA-B88					Not Qualified		BOTTOM	536870912 bit			4				NOR TYPE	.000005 Amp		YES	85 ns		NO
MTFDDAK064SBD-1AK12ITYY	Micron Technology	FLASH MODULE	INDUSTRIAL	22		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL				68719476736 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		64GX8	64G	-40 Cel					SINGLE	R-XSMA-X22		5.5 V	7.2 mm	69.85 mm				549755813888 bit	4.5 V	LENGTH_MAX			NOT SPECIFIED	NOT SPECIFIED	SLC NAND TYPE		100.45 mm			5
M29W800FB70N6T	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	524288 words	3.3	YES	3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48	1	3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	8388608 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE	.0001 Amp	18.4 mm	YES	70 ns	3	YES
M29W256GL60ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		16MX16	16M	0 Cel	256	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM/TOP	268435456 bit	2.7 V		8/16		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDCAE004SAF-1B2IT	Micron Technology	FLASH MODULE	INDUSTRIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	4294967296 words	5			8	MICROELECTRONIC ASSEMBLY						85 Cel		4GX8	4G	-40 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm	26.6 mm				34359738368 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
RD48F3000P0XBQ0A	Micron Technology	FLASH	INDUSTRIAL	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		16K,64K	28 mA	8388608 words		NO	2.5/3.3	16	GRID ARRAY, FINE PITCH	BGA64,10X12,32		Flash Memories		.8 mm	85 Cel		8MX16	8M	-40 Cel	4,127	YES			BOTTOM	R-PBGA-B64					Not Qualified		BOTTOM	134217728 bit			4				NOR TYPE	.000155 Amp		YES	85 ns		NO
M29W800FT70N6SF	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			524288 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		512KX16	512K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			TOP	8388608 bit	3 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		70 ns	3
MTFDDAC064MAM-1K1AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W256GH70ZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	15 mA	16777216 words	3	YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		16MX16	16M	-40 Cel	256	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified	.00007 ms		268435456 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W640GB60ZF3F	Micron Technology	FLASH	AUTOMOTIVE	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			4194304 words	3			16	GRID ARRAY, THIN PROFILE		8			1 mm	125 Cel		4MX16	4M	-40 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V	BOTTOM BOOT BLOCK					NOR TYPE		13 mm		60 ns	3
MTCF016A-XXX	Micron Technology	FLASH CARD	COMMERCIAL	50		UNSPECIFIED	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	PARALLEL	ASYNCHRONOUS			8388608 words	3.3			16	MICROELECTRONIC ASSEMBLY						60 Cel		8MX16	8M	0 Cel					UNSPECIFIED	X-XXMA-X50		3.465 V			Not Qualified			134217728 bit	3.135 V	CAN ALSO OPERATE WITH 5V SUPPLY					NOR TYPE					3.3
M29W400FB5AN6F	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	262144 words	3.3	YES	3/3.3	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	85 Cel		256KX16	256K	-40 Cel	1,2,1,7	YES	MATTE TIN	YES	DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm	Not Qualified		BOTTOM	4194304 bit	2.7 V	BOTTOM BOOT BLOCK		e3			NOR TYPE	.0001 Amp	18.4 mm	YES	55 ns	3	YES
PC48F2000W0YC00	Micron Technology	FLASH	INDUSTRIAL	44	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	40 mA	4194304 words	1.8	NO	1.8	16	GRID ARRAY, FINE PITCH	BGA44,8X14,20		Flash Memories		.5 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B44					Not Qualified		BOTTOM	67108864 bit			4				NOR TYPE	.000005 Amp		YES	60 ns		NO
MTFDDAK120MAV-1AE	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					5
M29W320EB70ZS1F	Micron Technology	FLASH	COMMERCIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, LOW PROFILE		8			1 mm	70 Cel		2MX16	2M	0 Cel					BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm			BOTTOM	33554432 bit	2.7 V						NOR TYPE		13 mm		70 ns	3
MTFDDAT064MAR-1J12AC	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAK240MAV-1AE12ZHA	Micron Technology	FLASH MODULE	COMMERCIAL	22	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			257698037760 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel	3-STATE	240GX8	240G	0 Cel					SINGLE	R-XSMA-N22		5.5 V	7 mm	69.85 mm				2061584302080 bit	4.5 V						MLC NAND TYPE		100.45 mm			5
MTFDDAV128MAY-1AH12ACYY	Micron Technology	FLASH MODULE	COMMERCIAL	75	SMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	SERIAL	ASYNCHRONOUS			137438953472 words	3.3			8	MICROELECTRONIC ASSEMBLY						70 Cel		128GX8	128G	0 Cel					DUAL	R-XDMA-N75		3.46 V	3.58 mm	22 mm				1099511627776 bit	3.14 V						MLC NAND TYPE		80 mm			3.3
M29W128GH60ZA1E	Micron Technology	FLASH	COMMERCIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	128K	20 mA	8192 words	3	YES	3/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	70 Cel		8KX16	8K	0 Cel	128	YES	TIN SILVER COPPER	YES	BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	10 mm	Not Qualified			131072 bit	2.7 V		8/16	e1			NOR TYPE	.0001 Amp	13 mm	YES	60 ns	3	YES
MTFDDAT064MAR-1K1	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MT8F432M-7S	Micron Technology	FLASH MODULE		80		RECTANGULAR	UNSPECIFIED	NO	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS			4194304 words				32	MICROELECTRONIC ASSEMBLY								4MX32	4M						SINGLE	R-XSMA-N80					Not Qualified			134217728 bit											70 ns	5
M29W128GSL70ZS6E	Micron Technology	FLASH	INDUSTRIAL	64	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		128K	20 mA	8388608 words		YES	3/3.3	16	GRID ARRAY	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		8MX16	8M	-40 Cel	128	YES		YES	BOTTOM	S-PBGA-B64					Not Qualified			134217728 bit			8/16				NOR TYPE	.0001 Amp		YES	70 ns		YES
M29F800FB55N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		16K,8K,32K,64K	20 mA	524288 words	5	YES	5	16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP48,.8,20	8	Flash Memories		.5 mm	125 Cel		512KX16	512K	-40 Cel	1,2,1,15	YES		YES	DUAL	R-PDSO-G48					Not Qualified		BOTTOM	8388608 bit							NOR TYPE	.00012 Amp		YES	55 ns		YES
M29W400FT5AN3ST	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			TOP	4194304 bit	2.7 V	TOP BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
MTFDDAA512MAM-1K22AA	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
MTFDDAA512MAM-1K2AB	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W160ET80N3T	Micron Technology	FLASH	AUTOMOTIVE	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			1048576 words	3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	125 Cel		1MX16	1M	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			TOP	16777216 bit	2.7 V						NOR TYPE		18.4 mm		70 ns	3
MTFDDAT064MAR-1K12	Micron Technology	FLASH								CMOS																																											MLC NAND TYPE					3.3
M29W640GB7AZS6F	Micron Technology	FLASH	INDUSTRIAL	64	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	8K,64K	20 mA	4194304 words	3	YES	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA64,8X8,40	8	Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES		YES	BOTTOM	R-PBGA-B64		3.6 V	1.4 mm	11 mm	Not Qualified		BOTTOM	67108864 bit	2.7 V		4/8		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.0001 Amp	13 mm	YES	70 ns	3	YES
M29W064FB7AZA6E	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	4K,32K	20 mA	4194304 words	3	YES		16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8		20	.8 mm	85 Cel		4MX16	4M	-40 Cel	8,127			YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			BOTTOM	67108864 bit	2.7 V		4					.0001 Amp	8 mm	YES	70 ns	3	YES
M58BW016FT8T3T	Micron Technology	FLASH	AUTOMOTIVE	80	QFP	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	AEC-Q100	GULL WING	PARALLEL		2K,16K	40 mA	524288 words		NO	2.5/3.3,3/3.3	32	FLATPACK	QFP80,.7X.9,32		Flash Memories		.8 mm	125 Cel		512KX32	512K	-40 Cel	8,31	YES			QUAD	R-PQFP-G80					Not Qualified		TOP	16777216 bit							NOR TYPE	.000005 Amp		YES	80 ns		NO
M29W320DT80ZE6	Micron Technology	FLASH	INDUSTRIAL	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS			2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH		8			.8 mm	85 Cel		2MX16	2M	-40 Cel					BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm			TOP	33554432 bit	2.5 V						NOR TYPE		8 mm		80 ns	3
M58BW016FB8ZA3FT	Micron Technology	FLASH	AUTOMOTIVE	80	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS			524288 words	3			32	GRID ARRAY, LOW PROFILE					1 mm	125 Cel		512KX32	512K	-40 Cel					BOTTOM	R-PBGA-B80		3.6 V	1.6 mm	10 mm			BOTTOM	16777216 bit	2.7 V						NOR TYPE		12 mm		80 ns	3
M29W064FT60ZB6E	Micron Technology	FLASH																																																								3
M29W400FB55N6SF	Micron Technology	FLASH	INDUSTRIAL	48	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS			262144 words	3.3			16	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH		8			.5 mm	85 Cel		256KX16	256K	-40 Cel					DUAL	R-PDSO-G48		3.6 V	1.2 mm	12 mm			BOTTOM	4194304 bit	3 V	BOTTOM BOOT BLOCK					NOR TYPE		18.4 mm		55 ns	3
RC28F640P33B85	Micron Technology	FLASH	INDUSTRIAL	64	TBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,64K	28 mA	4194304 words	3	NO	2.5/3.3	16	GRID ARRAY, THIN PROFILE	BGA64,8X8,40		Flash Memories		1 mm	85 Cel		4MX16	4M	-40 Cel	4,63	YES			BOTTOM	R-PBGA-B64		3.6 V	1.2 mm	8 mm	Not Qualified		BOTTOM	67108864 bit	2.3 V	SYNCHRONOUS BURST MODE OPERATION ALSO POSSIBLE; BOTTOM BOOT	4		NOT SPECIFIED	NOT SPECIFIED	NOR TYPE	.000135 Amp	10 mm	YES	85 ns	3	NO
PH28F640W30TC70	Micron Technology	FLASH	INDUSTRIAL	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL		4K,32K	22 mA	4194304 words		NO	1.8,3	16	GRID ARRAY, FINE PITCH	BGA56,7X8,30		Flash Memories		.75 mm	85 Cel		4MX16	4M	-40 Cel	8,127	YES			BOTTOM	R-PBGA-B56					Not Qualified		TOP	67108864 bit			4				NOR TYPE	.000021 Amp		YES	70 ns		NO
MTFDCAE002SAF-1B2	Micron Technology	FLASH MODULE	COMMERCIAL		XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SERIAL	ASYNCHRONOUS		120 mA	2147483648 words	5			8	MICROELECTRONIC ASSEMBLY						70 Cel		2GX8	2G	0 Cel					UNSPECIFIED	R-XXMA-X		5.25 V	9.7 mm	26.6 mm				17179869184 bit	4.75 V						SLC NAND TYPE	.06 Amp	36.9 mm			5
M29F160FT55M3F2	Micron Technology	FLASH																																																	30	260						5
M29W320DB70ZE3	Micron Technology	FLASH	AUTOMOTIVE	48	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	ASYNCHRONOUS	16K,8K,32K,64K	20 mA	2097152 words	3	YES	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,32	8	Flash Memories		.8 mm	125 Cel		2MX16	2M	-40 Cel	1,2,1,63	YES		YES	BOTTOM	R-PBGA-B48		3.6 V	1.2 mm	6 mm	Not Qualified		BOTTOM	33554432 bit	2.7 V						NOR TYPE	.0001 Amp	8 mm	YES	70 ns	3	YES

Flash Memory

Flash memory is a type of non-volatile computer memory that is commonly used in digital devices such as USB drives, solid-state drives, and digital cameras. It is a type of EEPROM (Electrically Erasable Programmable Read-Only Memory) that allows data to be erased and reprogrammed in blocks instead of one byte at a time. Flash memory uses a floating gate transistor to store data, which allows it to retain information even when the power is turned off.

Flash memory is widely used in digital devices because of its high capacity, small size, and fast access times. It is also more durable than other types of memory, such as hard disk drives, because it has no moving parts. This makes it ideal for use in portable devices that may be subject to physical shock or vibration.

There are two types of flash memory: NOR flash and NAND flash. NOR flash is faster than NAND flash, but it has lower density and higher cost per bit. NOR flash is typically used for code storage, such as firmware or boot code, because it provides faster access times. NAND flash has higher density and lower cost per bit, which makes it ideal for data storage applications.

Flash memory has a limited lifespan, as it can only be erased and reprogrammed a limited number of times. This is because the process of erasing and reprogramming the memory causes wear and tear on the floating gate transistor. However, modern flash memory devices have a sophisticated wear-leveling algorithm that distributes writes evenly across the memory, which extends the lifespan of the device.