RECTANGULAR Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
AT88SC0204C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	DIE	RECTANGULAR	UNSPECIFIED	YES	1	CMOS		NO LEAD	SYNCHRONOUS		256 words					8	UNCASED CHIP	DIE OR CHIP			70 Cel		256X8	256	0 Cel	Nickel/Gold (Ni/Au)	UPPER	1	R-XUUC-N8	1	5.5 V					2048 bit	2.7 V		e4					35 ns
AT88SC25616C-SU	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3				4.925 mm	35 ns
M24SR64-YMC6T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		8192 words		3.3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			.5 mm	85 Cel		8KX8	8K	-40 Cel	NICKEL PALLADIUM GOLD	DUAL		R-PDSO-N8	1	5.5 V	.6 mm		2 mm		65536 bit	2.7 V		e4	30	260		3 mm
47C04-E/SN	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
MR0A08BYS35	Everspin Technologies	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	65 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		128KX8	128K	0 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR10Q010CMB	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		131072 words		3.3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX8	128K	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1.35 mm		6 mm		1048576 bit	3 V						8 mm
XC17S30PD8I	Xilinx	MEMORY CIRCUIT	INDUSTRIAL	8	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS		THROUGH-HOLE	SYNCHRONOUS	10 mA	247968 words	COMMON	5		5	1	IN-LINE	DIP8,.3	OTP ROMs	2.54 mm	85 Cel	3-STATE	247968X1	247968	-40 Cel	Tin/Lead (Sn85Pb15)	DUAL		R-PDIP-T8	1	5.5 V	4.5974 mm	10 MHz	7.62 mm	Not Qualified	247968 bit	4.5 V		e0	30	225	.00005 Amp	9.3599 mm
47C04T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
47C04T-I/SN	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	3	5.5 V	1.75 mm		3.9 mm		4096 bit	4.5 V		e3	40	260		4.9 mm	400 ns
47L04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		4096 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC25616C-MJ	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K	0 Cel	Nickel/Gold (Ni/Au)	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V		e4					35 ns
AT88SC25616C-MJTG	Microchip Technology	CRYPTO MEMORY	COMMERCIAL	8	XMA	RECTANGULAR	UNSPECIFIED	NO	1	CMOS		UNSPECIFIED	SYNCHRONOUS		32768 words					8	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46			70 Cel		32KX8	32K	0 Cel	MATTE TIN	UNSPECIFIED	1	R-XXMA-X8		5.5 V					262144 bit	2.7 V							35 ns
DS2411X	Maxim Integrated	MEMORY CIRCUIT	INDUSTRIAL	4	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	ASYNCHRONOUS	.1 mA	64 words				2/5	1	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA4(UNSPEC)	Other Memory ICs		85 Cel		64X1	64	-40 Cel		BOTTOM		R-PBGA-B4	1	5.25 V	.59 mm		.69 mm	Not Qualified	64 bit	1.5 V				245	.000001 Amp	1.09 mm
M24SR64-YDW8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH			.65 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.2 mm		2.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.3 mm
M24SR64-YMN8T/2	STMicroelectronics	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		65536 words					1	SMALL OUTLINE			1.27 mm	105 Cel		64KX1	64K	-40 Cel		DUAL		R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED		4.9 mm
M24SR64-YSG12I/2	STMicroelectronics	MEMORY CIRCUIT			DIE	RECTANGULAR		YES	1	CMOS			SYNCHRONOUS		8192 words		3.3			8	UNCASED CHIP	DIE OR CHIP					8KX8	8K			UNSPECIFIED		R-XUUC-N		5.5 V					65536 bit	2.7 V			NOT SPECIFIED	NOT SPECIFIED
MT29C8G96MAZBADKD-5WT	Micron Technology	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-25 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.1 mm		10.5 mm		2147483648 bit	1.7 V	ALSO ORGANISED AS 128M X 16		NOT SPECIFIED	NOT SPECIFIED		13 mm
MT29GZ5A5BPGGA-046IT.87J	Micron Technology	MEMORY CIRCUIT		149	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		268435456 words		1.8	FLASH+LPDDR		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA149,14X16,20		.5 mm	85 Cel		256MX16	256M	-40 Cel		BOTTOM		R-PBGA-B149		1.95 V	.8 mm		8 mm		4294967296 bit	1.7 V						9.5 mm
47C04-I/ST	Microchip Technology	MEMORY CIRCUIT	INDUSTRIAL	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	85 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
M30162040108X0IWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		2097152 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	85 Cel		2MX8	2M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm		16777216 bit	2.7 V		e3		260		6 mm
MR0A16AYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	155 mA	65536 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		64KX16	64K	0 Cel	Matte Tin (Sn)	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
MR2A16AVYS35R	Freescale Semiconductor	MEMORY CIRCUIT	COMMERCIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS		262144 words		3.3		3.3	16	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	70 Cel		256KX16	256K	0 Cel	MATTE TIN	DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	4194304 bit	3 V		e3	40	260	.028 Amp	18.41 mm	35 ns
CY15B108QN-20LPXCES	Infineon Technologies	MEMORY CIRCUIT	COMMERCIAL	8	VSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		1048576 words		3.3			8	SMALL OUTLINE, VERY THIN PROFILE			.65 mm	70 Cel		1MX8	1M	0 Cel		DUAL		R-PDSO-N8		3.6 V	.55 mm		3.23 mm		8388608 bit	1.8 V						3.28 mm
M30082040108X0PWAY	Renesas Electronics	MEMORY CIRCUIT		8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		1048576 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE	SOLCC8,.25		1.27 mm	105 Cel		1MX8	1M	-40 Cel	TIN	DUAL		R-PDSO-N8	3	3.6 V	.8 mm		5 mm		8388608 bit	2.7 V		e3		260		6 mm
MB85AS4MTPF-G-BCERE1	Fujitsu	MEMORY CIRCUIT	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		524288 words		3.3			8	SMALL OUTLINE	SOP8,.3		1.27 mm	85 Cel		512KX8	512K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.73 mm		5.3 mm		4194304 bit	1.65 V			NOT SPECIFIED	NOT SPECIFIED		5.85 mm
MR25H256ACDFR	Everspin Technologies	SPI BUS SERIAL EEPROM	INDUSTRIAL	8	HVSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		NO LEAD	SYNCHRONOUS		32768 words		3			8	SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE			1.27 mm	85 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8	3	3.6 V	.9 mm		5 mm		262144 bit	2.7 V						6 mm
MT38W2011AA033JZZI.X68	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	52	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM		R-PBGA-B52		1.95 V	1.2 mm		4 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 16MBIT(1MBIT X 16) PSRAM					6 mm
MT38W2021A902ZQXZI.X69	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		4194304 words					16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-40 Cel		BOTTOM		R-PBGA-B88		1.95 V	1.2 mm		8 mm		67108864 bit	1.7 V	IT ALSO CONTAINS 32MBIT(2MBIT X 16) PSRAM					10 mm
S27KS0641DPBHI020	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		8388608 words		1.8			8	GRID ARRAY, VERY THIN PROFILE			1 mm	85 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	1.95 V	1 mm		6 mm		67108864 bit	1.7 V						8 mm
47C04-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		512 words		5	EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		512X8	512	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	5.5 V	1.2 mm		3 mm		4096 bit	4.5 V		e3	40	260		4.4 mm	400 ns
47L16T-E/ST	Microchip Technology	MEMORY CIRCUIT	AUTOMOTIVE	8	TSSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		2048 words			EEPROM+SRAM		8	SMALL OUTLINE, THIN PROFILE, SHRINK PITCH	TSSOP8,.25		.65 mm	125 Cel		2KX8	2K	-40 Cel	MATTE TIN	DUAL	1	R-PDSO-G8	1	3.6 V	1.2 mm		3 mm		16384 bit	2.7 V		e3	40	260		4.4 mm	400 ns
AT88SC0104CA-SH	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		128 words				3/3.3	8	SMALL OUTLINE	SOP8,.23	EEPROMs	1.27 mm	85 Cel		128X8	128	-40 Cel		DUAL	1	R-PDSO-G8		3.6 V	1.75 mm		3.9 mm	Not Qualified	1024 bit	2.7 V						4.9 mm	250 ns
D2758	Intel	OTP ROM	COMMERCIAL	24	DIP	RECTANGULAR	CERAMIC	NO		MOS		THROUGH-HOLE			1024 words	COMMON				8	IN-LINE	DIP24,.6	Other Memory ICs	2.54 mm	70 Cel	3-STATE	1KX8	1K	0 Cel	Tin/Lead (Sn/Pb)	DUAL		R-XDIP-T24						Not Qualified	8192 bit			e0					450 ns
H8BCS0UN0MCR-4EM	Sk Hynix	MEMORY CIRCUIT	OTHER	137	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		1.8			32	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX32	64M	-30 Cel		BOTTOM		R-PBGA-B137		1.95 V	1.2 mm		10.5 mm		2147483648 bit	1.7 V	ITS ALSO CONTAINS 4GBIT (256MBIT X16) NAND FLASH					13 mm
MR0A08BCYS35R	Everspin Technologies	MEMORY CIRCUIT	INDUSTRIAL	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	ASYNCHRONOUS	70 mA	131072 words		3.3		3.3	8	SMALL OUTLINE, THIN PROFILE	TSOP44,.46,32	SRAMs	.8 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-G44	3	3.6 V	1.2 mm		10.16 mm	Not Qualified	1048576 bit	3 V					.007 Amp	18.41 mm	35 ns
MR25H256MDC	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	8	HSON	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	NO LEAD	SYNCHRONOUS		32768 words		3.3		3/3.3	8	SMALL OUTLINE, HEAT SINK/SLUG	SOLCC8,.25	SRAMs	1.27 mm	125 Cel		32KX8	32K	-40 Cel		DUAL		R-PDSO-N8		3.6 V	1.05 mm		5 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.00001 Amp	6 mm
MR2A16AMYS35R	Everspin Technologies	MEMORY CIRCUIT	AUTOMOTIVE	44	TSOP2	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	GULL WING	ASYNCHRONOUS		262144 words		3.3			16	SMALL OUTLINE, THIN PROFILE			.8 mm	125 Cel		256KX16	256K	-40 Cel		DUAL		R-PDSO-G44		3.6 V	1.2 mm		10.16 mm		4194304 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		18.41 mm
MR44V100AMAZAATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		131072 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		128KX8	128K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm		3.9 mm		1048576 bit	1.8 V						4.9 mm
MR45V032AMAZBATL	Lapis Semiconductor	MEMORY CIRCUIT	INDUSTRIAL	8	LSOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		4096 words		3.3			8	SMALL OUTLINE, LOW PROFILE			1.27 mm	85 Cel		4KX8	4K	-40 Cel		DUAL		R-PDSO-G8		3.6 V	1.65 mm		3.9 mm		32768 bit	2.7 V						4.9 mm
MT29C4G48MAZBBAKS-48IT	Micron Technology	MEMORY CIRCUIT	INDUSTRIAL	137	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		536870912 words		1.8			8	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.8 mm	85 Cel		512MX8	512M	-40 Cel	TIN SILVER COPPER	BOTTOM		R-PBGA-B137		1.95 V	1 mm		10.5 mm		4294967296 bit	1.7 V	IT IS ALSO HAVING 2GBIT (X 32) LPDDR	e1	30	260		13 mm
MTFC16GLTDV-WT	Micron Technology		OTHER	169	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES				BALL							1.8/3.3,3/3.3		GRID ARRAY, FINE PITCH	BGA169,14X28,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM		R-PBGA-B169						Not Qualified	137438953472 bit
S27KL0641DABHB023	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	SYNCHRONOUS		8388608 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		8MX8	8M	-40 Cel		BOTTOM		R-PBGA-B24	3	3.6 V	1 mm		6 mm		67108864 bit	2.7 V						8 mm
SSDSCKJB150G701	Intel	MEMORY CIRCUIT	COMMERCIAL			RECTANGULAR	UNSPECIFIED		1	CMOS			ASYNCHRONOUS		161061273600 words					8					70 Cel		150GX8	150G	0 Cel											1288490188800 bit
AT88SC25616C-SU-T	Microchip Technology	CRYPTO MEMORY	INDUSTRIAL	8	SOP	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	SYNCHRONOUS		32768 words					8	SMALL OUTLINE	SOP8,.23		1.27 mm	85 Cel		32KX8	32K	-40 Cel	Matte Tin (Sn)	DUAL	1	R-PDSO-G8		5.5 V	1.75 mm		3.9 mm		262144 bit	2.7 V		e3				4.925 mm	35 ns
EMD3D256M08G1-150CBS1R	Everspin Technologies	MEMORY CIRCUIT	OTHER	78	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		33554432 words		1.5			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	0 Cel		BOTTOM		R-PBGA-B78		1.575 V	1.2 mm		10 mm		268435456 bit	1.425 V			NOT SPECIFIED	NOT SPECIFIED		13 mm
S71KL512SC0BHV003	Infineon Technologies	MEMORY CIRCUIT	INDUSTRIAL	24	VBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		BALL	SYNCHRONOUS		67108864 words		3			8	GRID ARRAY, VERY THIN PROFILE			1 mm	105 Cel		64MX8	64M	-40 Cel		BOTTOM		R-PBGA-B24	3		1 mm		6 mm		536870912 bit		HYPER RAM IS ORGANISED AS 8MX8					8 mm
SAA4955TJ	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SYNCHRONOUS	70 mA	245772 words		3.3		3.3	12	SMALL OUTLINE	SOJ40,.44	Other Memory ICs	1.27 mm	70 Cel		245772X12	245772	0 Cel	TIN	DUAL		R-PDSO-J40		3.6 V				Not Qualified	2949264 bit	3 V	IT ALSO REQUIRES 3 TO 5.5V SUPPLY	e3			.01 Amp		21 ns
SAA4955TJ/V1	NXP Semiconductors	MEMORY CIRCUIT	COMMERCIAL	40	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS		J BEND	SYNCHRONOUS		245772 words		3.3			12	SMALL OUTLINE				70 Cel		245772X12	245772	0 Cel		DUAL		R-PDSO-J40		3.6 V				Not Qualified	2949264 bit	3 V

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.