COMMERCIAL Other Function Memory ICs 1,473

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M36W216BI85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1	.00001 Amp	12 mm	85 ns
M36W832B85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
M36W432BG85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0	.00001 Amp	12 mm	85 ns
M8813F3Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words		5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M36W432B85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1		12 mm	85 ns
M8803F3Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words		5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M36W832B100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
M36W416BG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	70 ns
IMSB417-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		4194304 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	4MX8	4M	0 Cel		UNSPECIFIED	R-XXMA-T16	5.25 V				Not Qualified	33554432 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
M8813F1Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words		5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M36W108AB120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108AT100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0		11.8 mm	100 ns
M36W432T85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel			0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66					Not Qualified				e1			85 ns
M36W432T85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1		12 mm	85 ns
M36W108AB100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108B120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M36W108T120ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
IMSB401-5	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		32768 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	32KX8	32K	0 Cel		DUAL	R-XDMA-T16	5.25 V				Not Qualified	262144 bit	4.75 V
MK48H74E-45	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	32	QCCN		CERAMIC	YES		CMOS	NO LEAD		125 mA	8192 words		5		5	8	CHIP CARRIER	LCC32(UNSPEC)	SRAMs		70 Cel	8KX8	8K	0 Cel	TIN LEAD	QUAD						Not Qualified	65536 bit			e0	.125 Amp		45 ns
M36W216B100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
M36W432B70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel			0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66					Not Qualified				e1			70 ns
M36W432TG70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0	.00001 Amp	12 mm	70 ns
M36W108AB120ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1		11.8 mm	120 ns
M8803F3Y-15T1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words		5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
M36W216BI85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1	.00001 Amp	12 mm	85 ns
Z8038AD1N	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	128 words		5		5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	DUAL	R-CDIP-T40	5.25 V		6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V		e0
ST1200M	STMicroelectronics	OTP ROM	COMMERCIAL	8						MOS			10 mA	256 words	COMMON				1	MICROELECTRONIC ASSEMBLY	MODULE,8LEAD,.46	Other Memory ICs		70 Cel	256X1	256	-10 Cel								Not Qualified							500 ns
M36W832BE100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0	.00002 Amp	12 mm	100 ns
M36W108T100ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M8803F2Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words		5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
MK41S80P12	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	22	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		120 mA	4096 words		5		5	4	IN-LINE	DIP22,.3	SRAMs	2.54 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-XDIP-T22					Not Qualified	16384 bit			e0	.12 Amp		12 ns
M36W216BI70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1	.00001 Amp	12 mm	70 ns
M36W832TE70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0	.00002 Amp	12 mm	70 ns
M36W832B100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
MK41S80X15TR	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		120 mA	4096 words		5		5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-PDSO-J24					Not Qualified	16384 bit			e0	.12 Amp		15 ns
M36W416TG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	70 ns
M36W832TE100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM	e0	.00002 Amp	12 mm	100 ns
M36W216B100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
M36W108AB100ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1		11.8 mm	100 ns
MK41S80X10/20	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	4096 words		5		5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-PDSO-J24	5.25 V				Not Qualified	16384 bit	4.75 V		e0	.12 Amp		10 ns
M36W416TG85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	85 ns
M36W108AT100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W108AT100ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1		11.8 mm	100 ns
MK41S80X25/20	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	120 mA	4096 words		5		5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-PDSO-J24	5.25 V				Not Qualified	16384 bit	4.75 V		e0	.12 Amp		25 ns
M36W216BI70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1	.00001 Amp	12 mm	70 ns
IMSB401-3	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	MOS	THROUGH-HOLE	ASYNCHRONOUS		32768 words		5			32	MICROELECTRONIC ASSEMBLY				50 Cel	32KX32	32K	0 Cel		DUAL	R-XDMA-T16	5.25 V				Not Qualified	1048576 bit	4.75 V
M36W832BE85ZA1S	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16			12 mm
M8813F3Y-15K1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words		5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.