Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Infineon Technologies |
MEMORY CIRCUIT |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
6 mA |
ROM+SRAM |
1.8/3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
e0 |
.000001 Amp |
|||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
28 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
100 mA |
5 |
5 |
SMALL OUTLINE |
SOP28,.45 |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G28 |
Not Qualified |
e0 |
.005 Amp |
25 ns |
|||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
50 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
240 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G50 |
133 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
4.5 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
5 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
8388608 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
DUAL |
R-PDSO-G54 |
166 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.3 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
4194304 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.7 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
240 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
133 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
4.5 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
8388608 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.5 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
4194304 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
R-PDSO-G54 |
133 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.5 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
2097152 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
2MX8 |
2M |
0 Cel |
DUAL |
R-PDSO-G44 |
100 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
5 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
8388608 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
8MX8 |
8M |
0 Cel |
DUAL |
R-PDSO-G54 |
100 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.7 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
44 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
240 mA |
4194304 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
4 |
SMALL OUTLINE, THIN PROFILE |
TSOP44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
4MX4 |
4M |
0 Cel |
DUAL |
R-PDSO-G44 |
133 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
4.5 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
54 |
TSOP |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
4194304 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP54,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
4MX16 |
4M |
0 Cel |
DUAL |
R-PDSO-G54 |
166 MHz |
Not Qualified |
67108864 bit |
1,2,4,8 |
4.3 ns |
|||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
50 |
TSOP |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
160 mA |
1048576 words |
1,2,4,8,FP |
COMMON |
2.5/3.3,3.3 |
16 |
SMALL OUTLINE, THIN PROFILE |
TSOP50,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
3-STATE |
1MX16 |
1M |
0 Cel |
DUAL |
R-PDSO-G50 |
100 MHz |
Not Qualified |
16777216 bit |
.002 Amp |
1,2,4,8 |
5 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
5 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
1664 words |
1 |
SPECIAL SHAPE |
70 Cel |
1664X1 |
1664 |
0 Cel |
TIN LEAD |
UNSPECIFIED |
R-XXSS-X5 |
Not Qualified |
1664 bit |
DATA RETENTION > 10 YEARS |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
16 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
6 mA |
512 words |
5 |
5 |
16 |
SMALL OUTLINE, SHRINK PITCH |
SOP16,.4 |
Other Memory ICs |
.635 mm |
70 Cel |
512X16 |
512 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
5.5 V |
1.75 mm |
3.9 mm |
Not Qualified |
8192 bit |
4.5 V |
e0 |
4.89 mm |
||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
100 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.025 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
100 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.025 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
IN-LINE |
2.54 mm |
70 Cel |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T28 |
1 |
11.94 mm |
15.24 mm |
Not Qualified |
e0 |
35.56 mm |
||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
28 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
ASYNCHRONOUS |
5 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
0 Cel |
TIN LEAD |
UNSPECIFIED |
R-XXMA-X28 |
5.5 V |
Not Qualified |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
16 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
1664 words |
5 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1664X1 |
1664 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G16 |
1 |
5.5 V |
2.65 mm |
7.5 mm |
Not Qualified |
1664 bit |
4.5 V |
e0 |
10.3 mm |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
75 mA |
32768 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
32KX8 |
32K |
0 Cel |
SINGLE |
R-XSMA-N30 |
1 |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
.01 Amp |
250 ns |
||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
100 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.025 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
5 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
6 mA |
128 words |
5 |
5 |
8 |
SPECIAL SHAPE |
MODULE,5LEAD,.65 |
SRAMs |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
SINGLE |
R-XSSS-X |
5.5 V |
Not Qualified |
1024 bit |
4.5 V |
e0 |
.0025 Amp |
||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
100 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.025 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
32768 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
100 mA |
524288 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
.025 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
75 mA |
8192 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
65536 bit |
4.5 V |
e0 |
.01 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
2048 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
2KX8 |
2K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
16384 bit |
4.5 V |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
65536 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64KX8 |
64K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
5 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
64 words |
5 |
1 |
SPECIAL SHAPE |
70 Cel |
64X1 |
64 |
0 Cel |
TIN LEAD |
SINGLE |
R-XSSS-X5 |
5.5 V |
Not Qualified |
64 bit |
4.5 V |
10 YEAR DATA RETENTION; 1-WIRE SERIAL INTERFACE |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
32768 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
32KX8 |
32K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X |
5.5 V |
Not Qualified |
262144 bit |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
5 |
5 |
SMALL OUTLINE |
SOP8,.25 |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G8 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
524288 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
5 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
1024 words |
1 |
SPECIAL SHAPE |
70 Cel |
1KX1 |
1K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
R-XXSS-X5 |
Not Qualified |
1024 bit |
DATA RETENTION > 10 YEARS |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
75 mA |
16384 words |
5 |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
CARD30 |
SRAMs |
70 Cel |
16KX8 |
16K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
131072 bit |
4.5 V |
e0 |
.01 Amp |
250 ns |
|||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
UNSPECIFIED |
UNSPECIFIED |
NO |
1 |
CMOS |
UNSPECIFIED |
SYNCHRONOUS |
65536 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
64KX8 |
64K |
0 Cel |
TIN LEAD |
UNSPECIFIED |
X-XXMA-X |
5.5 V |
Not Qualified |
524288 bit |
4.5 V |
e0 |
||||||||||||||||||||||||||||||||||||||||||||||||
Maxim Integrated |
MEMORY CIRCUIT |
COMMERCIAL |
30 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
NO LEAD |
ASYNCHRONOUS |
524288 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
70 Cel |
512KX8 |
512K |
0 Cel |
TIN LEAD |
SINGLE |
R-XSMA-N30 |
5.5 V |
Not Qualified |
4194304 bit |
4.5 V |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
10 mA |
53984 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
53984X1 |
53984 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
5.25 V |
1.2 mm |
10 MHz |
3.9 mm |
Not Qualified |
53984 bit |
4.75 V |
e0 |
30 |
225 |
.00005 Amp |
4.9 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
5 mA |
781248 words |
COMMON |
3.3 |
3.3 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
781248X1 |
781248 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T8 |
1 |
3.6 V |
4.5974 mm |
10 MHz |
7.62 mm |
Not Qualified |
781248 bit |
3 V |
e0 |
30 |
225 |
.00005 Amp |
9.3599 mm |
|||||||||||||||||||||||||||||||
|
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
20 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
1040128 words |
3.3 |
1 |
SMALL OUTLINE |
1.27 mm |
70 Cel |
1040128X1 |
1040128 |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDSO-G20 |
3 |
3.6 V |
2.65 mm |
7.5 mm |
Not Qualified |
1040128 bit |
3 V |
e3 |
30 |
260 |
12.8 mm |
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Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
20 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
5 mA |
559232 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP20,.4 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
559232X1 |
559232 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G20 |
3 |
3.6 V |
2.65 mm |
10 MHz |
7.5 mm |
Not Qualified |
559232 bit |
3 V |
e0 |
30 |
225 |
.00005 Amp |
12.8 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
5 mA |
54544 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
54544X1 |
54544 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
1.2 mm |
10 MHz |
3.9 mm |
Not Qualified |
54544 bit |
3 V |
e0 |
30 |
225 |
.00005 Amp |
4.9 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
20 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
5 mA |
1040128 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE |
SOP20,.4 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
1040128X1 |
1040128 |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-G20 |
3 |
3.6 V |
2.65 mm |
10 MHz |
7.5 mm |
Not Qualified |
1040128 bit |
3 V |
e0 |
30 |
225 |
.00005 Amp |
12.8 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
10 mA |
329312 words |
COMMON |
5 |
5 |
1 |
IN-LINE |
DIP8,.3 |
OTP ROMs |
2.54 mm |
70 Cel |
3-STATE |
329312X1 |
329312 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T8 |
1 |
5.25 V |
4.5974 mm |
10 MHz |
7.62 mm |
Not Qualified |
329312 bit |
4.75 V |
e0 |
30 |
225 |
.00005 Amp |
9.3599 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
5 mA |
179160 words |
COMMON |
3.3 |
3.3 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
179160X1 |
179160 |
0 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
1.2 mm |
10 MHz |
3.9 mm |
Not Qualified |
179160 bit |
3 V |
e0 |
30 |
225 |
.00005 Amp |
4.9 mm |
|||||||||||||||||||||||||||||||
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
TSOP2 |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
10 mA |
247968 words |
COMMON |
5 |
5 |
1 |
SMALL OUTLINE, THIN PROFILE |
TSOP8,.25 |
OTP ROMs |
1.27 mm |
70 Cel |
3-STATE |
247968X1 |
247968 |
0 Cel |
Tin/Lead (Sn85Pb15) |
DUAL |
R-PDSO-G8 |
3 |
5.25 V |
1.2 mm |
10 MHz |
3.9 mm |
Not Qualified |
247968 bit |
4.75 V |
e0 |
30 |
225 |
.00005 Amp |
4.9 mm |
|||||||||||||||||||||||||||||||
|
Xilinx |
MEMORY CIRCUIT |
COMMERCIAL |
8 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
559232 words |
3.3 |
1 |
IN-LINE |
2.54 mm |
70 Cel |
559232X1 |
559232 |
0 Cel |
Matte Tin (Sn) |
DUAL |
R-PDIP-T8 |
1 |
3.6 V |
4.5974 mm |
7.62 mm |
Not Qualified |
559232 bit |
3 V |
e3 |
30 |
250 |
9.3599 mm |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.