COMMERCIAL Other Function Memory ICs 1,473

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
M36W216B85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
MK48H74P-35	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		125 mA	8192 words		5		5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0	.125 Amp		35 ns
M36W832T100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
ST1200W2	STMicroelectronics	OTP ROM	COMMERCIAL							MOS			10 mA	256 words	COMMON				1		WAFER	Other Memory ICs		70 Cel	256X1	256	-10 Cel								Not Qualified							500 ns
M36W108B100ZN1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, VERY THIN PROFILE	LGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	100 ns
M36W832TE85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0	.00002 Amp	12 mm	85 ns
IMSB433-16	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS		16777216 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	16MX8	16M	0 Cel		UNSPECIFIED	R-XXMA-T16	5.25 V				Not Qualified	134217728 bit	4.75 V	SRAM IS CONFIGURED AS 64 K X 8
M36W216T100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
MK41S80X25TR	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		120 mA	4096 words		5		5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-PDSO-J24					Not Qualified	16384 bit			e0	.12 Amp		25 ns
IMSB428-12	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		2097152 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	2MX8	2M	0 Cel		UNSPECIFIED	R-XXMA-T16	5.25 V				Not Qualified	16777216 bit	4.75 V
MK48H74P-55	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		125 mA	8192 words		5		5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0	.125 Amp		55 ns
M36W432TG70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0	.00001 Amp	12 mm	70 ns
M36W432T70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM IS ORGANIZED AS 256K X 16	e1		12 mm	70 ns
M8813F2Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words		5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
MK48H74N-45	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		125 mA	8192 words		5		5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-PDIP-T28					Not Qualified	65536 bit			e0	.125 Amp		45 ns
M36W432BG70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e0	.00001 Amp	12 mm	70 ns
M36W832T100ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
M8803F2Y-15K1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND			131072 words		5			8	CHIP CARRIER			1.27 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQCC-J52	5.5 V	4.57 mm		19.1262 mm	Not Qualified	1048576 bit	4.5 V				19.1262 mm
M36W832BE85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	2MX16	2M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B66	3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16	e0	.00002 Amp	12 mm	85 ns
IMSB401-8	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		32768 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	32KX8	32K	0 Cel		DUAL	R-XDMA-T16	5.25 V				Not Qualified	262144 bit	4.75 V
M36W108AB120ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1	.00002 Amp	11.8 mm	120 ns
M8803F3Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words		5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
MK48H74P-45	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	28	DIP	RECTANGULAR	CERAMIC	NO		CMOS	THROUGH-HOLE		125 mA	8192 words		5		5	8	IN-LINE	DIP28,.6	SRAMs	2.54 mm	70 Cel	8KX8	8K	0 Cel	TIN LEAD	DUAL	R-XDIP-T28					Not Qualified	65536 bit			e0	.125 Amp		45 ns
M36W416BG70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	70 ns
Z8038AB1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	128 words		5		5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	DUAL	R-PDIP-T40	5.25 V		6 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V		e0		52.18 mm
Z8038D1N	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	CERAMIC, METAL-SEALED COFIRED	NO	1	CMOS	THROUGH-HOLE	ASYNCHRONOUS	250 mA	128 words		5		5	8	IN-LINE	DIP40,.6	FIFOs	2.54 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	DUAL	R-CDIP-T40	5.25 V		4 MHz	15.24 mm	Not Qualified	1024 bit	4.75 V		e0
M36W108T120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
ST1200W1	STMicroelectronics	OTP ROM	COMMERCIAL							MOS			10 mA	256 words	COMMON				1		WAFER	Other Memory ICs		70 Cel	256X1	256	-10 Cel								Not Qualified							500 ns
M36W108B120ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e0	.00002 Amp	11.8 mm	120 ns
M46Z256Y-85PL1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	40	DIP	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	THROUGH-HOLE		200 mA	262144 words		5		5	16	IN-LINE	DIP40,.6	SRAMs	2.54 mm	70 Cel	256KX16	256K	0 Cel	TIN LEAD	DUAL	R-PDIP-T40					Not Qualified	4194304 bit			e0	.005 Amp		85 ns
M36W832TE70ZA1S	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.6 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16			12 mm
IMSB418-10	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL			UNSPECIFIED	UNSPECIFIED	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS		262144 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	256KX8	256K	0 Cel		UNSPECIFIED	X-XXMA-X	5.25 V				Not Qualified	2097152 bit	4.75 V
M36W216T100ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
M36W108B120ZM1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, LOW PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
M36W416BG85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	85 ns
Z8038AC1V	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	ASYNCHRONOUS	250 mA	128 words		5		5	8	CHIP CARRIER	LDCC44,.7SQ	FIFOs	1.27 mm	70 Cel	128X8	128	0 Cel	TIN LEAD	QUAD	S-PQCC-J44	5.25 V	4.7 mm	6 MHz	16.5862 mm	Not Qualified	1024 bit	4.75 V		e0		16.5862 mm
M36W832T85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
M36W216B85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	1MX16	1M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	ALSO CONTAINS 128K X 16 SRAM			12 mm
M36W108B120ZN1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	VLGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BUTT	ASYNCHRONOUS		1048576 words					8	GRID ARRAY, VERY THIN PROFILE			1 mm	70 Cel	1MX8	1M	0 Cel		BOTTOM	R-PBGA-B48	3.6 V	1 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM			11.8 mm
MK48H74E-55	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	32	QCCN		CERAMIC	YES		CMOS	NO LEAD		125 mA	8192 words		5		5	8	CHIP CARRIER	LCC32(UNSPEC)	SRAMs		70 Cel	8KX8	8K	0 Cel	TIN LEAD	QUAD						Not Qualified	65536 bit			e0	.125 Amp		55 ns
M8813F3Y-15T1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING			131072 words		5			8	FLATPACK			.65 mm	70 Cel	128KX8	128K	0 Cel		QUAD	S-PQFP-G52	5.5 V	2.35 mm		10 mm	Not Qualified	1048576 bit	4.5 V				10 mm
IMSB411-3	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	16		RECTANGULAR	UNSPECIFIED	NO	1	CMOS	THROUGH-HOLE	SYNCHRONOUS		1048576 words		5			8	MICROELECTRONIC ASSEMBLY				50 Cel	1MX8	1M	0 Cel		DUAL	R-XDMA-T16	5.25 V				Not Qualified	8388608 bit	4.75 V
M36W432T70ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			3	FLASH+SRAM	3		GRID ARRAY, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel			0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66					Not Qualified				e1			70 ns
MK41S80X20TR	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	24	SOJ	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	J BEND		120 mA	4096 words		5		5	4	SMALL OUTLINE	SOJ24,.34	SRAMs	1.27 mm	70 Cel	4KX4	4K	0 Cel	TIN LEAD	DUAL	R-PDSO-J24					Not Qualified	16384 bit			e0	.12 Amp		20 ns
M36W416BG85ZA1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 256K X 16	e1	.00001 Amp	12 mm	85 ns
M36W108AT100ZM1	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	100 mA	1048576 words			FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	70 Cel	1MX8	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B48	3.6 V	1.35 mm		9.8 mm	Not Qualified	8388608 bit	2.7 V	ALSO CONTAINS 128K X 8 SRAM	e1	.00002 Amp	11.8 mm	100 ns
M36W832T85ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	70 Cel	2MX16	2M	0 Cel		BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 512K X 16 SRAM			12 mm
M36W216TI70ZA1T	STMicroelectronics	MEMORY CIRCUIT	COMMERCIAL	66	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	20 mA	1048576 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA66,8X12,32	Other Memory ICs	.8 mm	70 Cel	1MX16	1M	0 Cel	Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5)	BOTTOM	R-PBGA-B66	3.3 V	1.4 mm		8 mm	Not Qualified	16777216 bit	2.7 V	STATIC RAM ORGANISED AS 128KBIT X 16	e1	.00001 Amp	12 mm	70 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.