Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
IN-LINE |
DIP40,.6 |
FIFOs |
2.54 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
5.25 V |
4 MHz |
15.24 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
52.18 mm |
||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
52 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
131072 words |
5 |
8 |
CHIP CARRIER |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
QUAD |
S-PQCC-J52 |
5.5 V |
4.57 mm |
19.1262 mm |
Not Qualified |
1048576 bit |
4.5 V |
19.1262 mm |
|||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
16 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
4194304 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
50 Cel |
4MX8 |
4M |
0 Cel |
UNSPECIFIED |
R-XXMA-T16 |
5.25 V |
Not Qualified |
33554432 bit |
4.75 V |
|||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
4096 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
4KX4 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
Not Qualified |
16384 bit |
e0 |
.12 Amp |
10 ns |
||||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
40 mA |
1048576 words |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, LOW PROFILE |
BGA48,6X8,40 |
Other Memory ICs |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.35 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
e1 |
11.8 mm |
120 ns |
|||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
THROUGH-HOLE |
200 mA |
262144 words |
5 |
5 |
16 |
IN-LINE |
DIP40,.6 |
SRAMs |
2.54 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T40 |
Not Qualified |
4194304 bit |
e0 |
.005 Amp |
120 ns |
|||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, VERY THIN PROFILE |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
70 Cel |
1MX16 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B66 |
3.3 V |
1.4 mm |
8 mm |
Not Qualified |
16777216 bit |
2.7 V |
ALSO CONTAINS 128K X 16 SRAM |
12 mm |
|||||||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
20 mA |
2097152 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
TIN SILVER COPPER |
BOTTOM |
R-PBGA-B66 |
3.3 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
2.7 V |
STATIC RAM IS ORGANIZED AS 256K X 16 |
e1 |
12 mm |
70 ns |
||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
35 mA |
2097152 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
2MX16 |
2M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B66 |
3.6 V |
1.4 mm |
8 mm |
Not Qualified |
33554432 bit |
2.7 V |
SRAM IS ORGANISED AS 512K X 16 |
e0 |
.00002 Amp |
12 mm |
85 ns |
||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.35 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
44 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
250 mA |
128 words |
5 |
5 |
8 |
CHIP CARRIER |
LDCC44,.7SQ |
FIFOs |
1.27 mm |
70 Cel |
128X8 |
128 |
0 Cel |
TIN LEAD |
QUAD |
S-PQCC-J44 |
5.25 V |
4.7 mm |
4 MHz |
16.5862 mm |
Not Qualified |
1024 bit |
4.75 V |
e0 |
16.5862 mm |
|||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
4KX4 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
5.25 V |
Not Qualified |
16384 bit |
4.75 V |
e0 |
.12 Amp |
20 ns |
|||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
16 |
RECTANGULAR |
UNSPECIFIED |
NO |
1 |
CMOS |
THROUGH-HOLE |
SYNCHRONOUS |
2097152 words |
5 |
8 |
MICROELECTRONIC ASSEMBLY |
50 Cel |
2MX8 |
2M |
0 Cel |
UNSPECIFIED |
R-XXMA-T16 |
5.25 V |
Not Qualified |
16777216 bit |
4.75 V |
SRAM IS CONFIGURED AS 32 K X 8 |
||||||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
ASYNCHRONOUS |
120 mA |
4096 words |
5 |
5 |
4 |
SMALL OUTLINE |
SOJ24,.34 |
SRAMs |
1.27 mm |
70 Cel |
4KX4 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDSO-J24 |
5.25 V |
Not Qualified |
16384 bit |
4.75 V |
e0 |
.12 Amp |
15 ns |
|||||||||||||||||||||||||||||||||||||||
|
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
66 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
20 mA |
1048576 words |
3 |
FLASH+SRAM |
3 |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
BGA66,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
1MX16 |
1M |
0 Cel |
Tin/Silver/Copper (Sn95.5Ag4.0Cu0.5) |
BOTTOM |
R-PBGA-B66 |
3.3 V |
1.4 mm |
8 mm |
Not Qualified |
16777216 bit |
2.7 V |
STATIC RAM ORGANISED AS 256K X 16 |
e1 |
.00001 Amp |
12 mm |
85 ns |
|||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
VLGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BUTT |
ASYNCHRONOUS |
40 mA |
1048576 words |
FLASH+SRAM |
3/3.3 |
8 |
GRID ARRAY, VERY THIN PROFILE |
LGA48,6X8,40 |
Other Memory ICs |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
TIN LEAD |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
e0 |
11.8 mm |
120 ns |
||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
48 |
LBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
1048576 words |
8 |
GRID ARRAY, LOW PROFILE |
1 mm |
70 Cel |
1MX8 |
1M |
0 Cel |
BOTTOM |
R-PBGA-B48 |
3.6 V |
1.35 mm |
9.8 mm |
Not Qualified |
8388608 bit |
2.7 V |
ALSO CONTAINS 128K X 8 SRAM |
11.8 mm |
||||||||||||||||||||||||||||||||||||||||||||
STMicroelectronics |
MEMORY CIRCUIT |
COMMERCIAL |
32 |
QCCN |
CERAMIC |
YES |
CMOS |
NO LEAD |
125 mA |
8192 words |
5 |
5 |
8 |
CHIP CARRIER |
LCC32(UNSPEC) |
SRAMs |
70 Cel |
8KX8 |
8K |
0 Cel |
TIN LEAD |
QUAD |
Not Qualified |
65536 bit |
e0 |
.125 Amp |
35 ns |
||||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||
|
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
NOT SPECIFIED |
NOT SPECIFIED |
|||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
245772 words |
3.3 |
12 |
SMALL OUTLINE |
70 Cel |
245772X12 |
245772 |
0 Cel |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949264 bit |
3 V |
||||||||||||||||||||||||||||||||||||||||||||||||
NXP Semiconductors |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
J BEND |
SYNCHRONOUS |
70 mA |
245760 words |
3.3 |
3.3 |
12 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
240KX12 |
240K |
0 Cel |
Tin (Sn) |
DUAL |
R-PDSO-J40 |
3.6 V |
Not Qualified |
2949120 bit |
3 V |
e3 |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2520 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
1207959552 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J68 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1250 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
3 V |
0 Cel |
DUAL |
R-PDMA-N168 |
83 MHz |
Not Qualified |
301989888 bit |
.02 Amp |
9 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
268435456 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N184 |
125 MHz |
Not Qualified |
19327352832 bit |
.8 ns |
||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
900 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
3 V |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
301989888 bit |
.018 Amp |
8 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
603979776 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1620 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
603979776 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
603979776 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1980 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
1MX72 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
75497472 bit |
.03 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
1024 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
1048576 words |
NO |
COMMON |
5 |
5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
1MX72 |
1M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
75497472 bit |
.03 Amp |
70 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
72 |
SIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1100 mA |
8388608 words |
YES |
COMMON |
5 |
5 |
40 |
MICROELECTRONIC ASSEMBLY |
SSIM72 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX40 |
8M |
0 Cel |
SINGLE |
R-PSMA-N72 |
25.4 mm |
Not Qualified |
335544320 bit |
.004 Amp |
60 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
184 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
268435456 words |
COMMON |
2.5 |
2.5 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM184 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
256MX72 |
256M |
0 Cel |
DUAL |
R-PDMA-N184 |
143 MHz |
Not Qualified |
19327352832 bit |
.75 ns |
||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2070 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
1207959552 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1530 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
1207959552 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2708 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
200 MHz |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.44 Amp |
.6 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
68 |
QCCJ |
SQUARE |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
70 mA |
5 |
5 |
CHIP CARRIER |
LDCC68,1.0SQ |
Other Memory ICs |
1.27 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
QUAD |
S-PQCC-J68 |
Not Qualified |
e0 |
|||||||||||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
3010 mA |
134217728 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
128MX72 |
128M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
266 MHz |
Not Qualified |
9663676416 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.562 Amp |
.5 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
2070 mA |
16777216 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
16MX72 |
16M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
1207959552 bit |
.03 Amp |
60 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1450 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
3 V |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
301989888 bit |
.02 Amp |
8 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1800 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
38.1 mm |
Not Qualified |
603979776 bit |
.03 Amp |
50 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
DDR DRAM MODULE |
COMMERCIAL |
240 |
DIMM |
8192 |
RECTANGULAR |
UNSPECIFIED |
SINGLE BANK PAGE BURST |
NO |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1593 mA |
67108864 words |
COMMON |
1.8 |
1.8 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM240,40 |
Other Memory ICs |
1 mm |
55 Cel |
3-STATE |
64MX72 |
64M |
0 Cel |
DUAL |
1 |
R-XDMA-N240 |
1.9 V |
266 MHz |
Not Qualified |
4831838208 bit |
1.7 V |
AUTO/SELF REFRESH |
NOT SPECIFIED |
NOT SPECIFIED |
.369 Amp |
.5 ns |
||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1250 mA |
4194304 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
3 V |
0 Cel |
DUAL |
R-PDMA-N168 |
83 MHz |
Not Qualified |
301989888 bit |
.02 Amp |
9 ns |
|||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1395 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
603979776 bit |
.018 Amp |
7 ns |
||||||||||||||||||||||||||||||||||||||||||
Infineon Technologies |
MEMORY CIRCUIT |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
6 mA |
ROM+SRAM |
1.8/3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.56,20 |
Other Memory ICs |
.5 mm |
70 Cel |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
e0 |
.000001 Amp |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.