OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
S71WS512PD0HF3SL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71PL127NB0HHW4U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	64	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA64,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B64					Not Qualified									70 ns
S71VS064RB0AHTCL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	52			PLASTIC/EPOXY	YES		CMOS					1.8	FLASH+PSRAM	1.8			BGA52,6X10,20	Other Memory ICs		85 Cel			-25 Cel								Not Qualified
S71WS064JA0BFW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS256JC0BFWTA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S71WS064JB0BAW2A1	Infineon Technologies	MEMORY CIRCUIT	OTHER	80	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA80,8X10,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B80					Not Qualified							.00005 Amp		55 ns
S71WS128PC0HF3SL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS512PC0HF3S22	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS256PD0HF3HR2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS512PC0HF3S23	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS512PC0HF3S20	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS256PD0HF3HL0	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B84	3				Not Qualified				e1	40	260			80 ns
S71WS128JA0BAWAA1	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA		1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA84,10X12,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B84					Not Qualified							.00005 Amp		55 ns
S71GL064NA0BFW0U2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S71NS128NA0BJWSD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S72NS512RE0AHGG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm	10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16					11 mm
S72NS128RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S72NS256RD0AHBG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S71NS128NA0BJWME0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S72NS128RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S72XS128RD0AHBJD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V						8 mm
S72NS256RD0AHBM40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S71XS256RD0ZHEC42	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16					9.2 mm
S72NS256RD0AHBG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S71GL032NA0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S72NS256RD0KHFG43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S72NS128RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S72XS256RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V						8 mm
S71GL064NB0BFW0K0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL				3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified									90 ns
S71GL128PC0HH31Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V						11.6 mm
S72NS256RD0AHBL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					8 mm
S75WS256PEFJF5VS2	Infineon Technologies	MEMORY CIRCUIT	OTHER	115	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B115	3	1.95 V	1.4 mm	9 mm	Not Qualified	268435456 bit	1.7 V		e1	40	260		12 mm
S71NS128NA0BJWMN0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S72NS256RD0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S71NS256RC0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+PSRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	268435456 bit	1.7 V	PSRAM IS ORGANISED AS 64 MB(4 MB X 16-BIT)					9.2 mm
S72XS128RD0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		134217728 bit	1.7 V						8 mm
S71NS128NA0BJWME2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS256NC0BJWVN1	Infineon Technologies	MEMORY CIRCUIT	OTHER	60	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel	Tin/Silver/Copper/Nickel (Sn/Ag/Cu/Ni)	BOTTOM	R-PBGA-B60	3	1.95 V	1.2 mm	10 mm	Not Qualified	268435456 bit	1.7 V		e2	40	260		11 mm
S71NS128NA0BJWMN2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S72NS256RD0KHFL03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16					12 mm
S71NS128NA0BJWMF2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S71NS128NA0BJWSZ3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71GL032N40BHW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16					9 mm
S71GL032NA0BHW0U3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260		9 mm	90 ns
S71NS256RD0AHKJL3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES			BALL				1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA56,10X14,20	Other Memory ICs	.5 mm	85 Cel			-25 Cel		BOTTOM	R-PBGA-B56					Not Qualified
S71NS128NA0BJWSM0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				9.2 mm
S71NS128NA0BJWMD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1				7.7 mm
S72XS256RE0AHBHE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V						8 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.