OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Minimum Data Retention Time	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Endurance	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Type	Maximum Standby Current	Length	Maximum Access Time
XQR18V04VQ44N	Xilinx	CONFIGURATION MEMORY	OTHER	44	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	SERIAL		50 mA					2.5/3.3,3.3		FLATPACK	TQFP44,.47SQ,32	Flash Memories	10	.8 mm	100 Cel				-55 Cel	Tin/Lead (Sn85Pb15)	QUAD	S-PQFP-G44	3			2000 Write/Erase Cycles	20 MHz		Not Qualified	4194304 bit			e0	30	240	NOR TYPE	.02 Amp
TH50VSF2481AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	1048576 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs		.8 mm	85 Cel		1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65		3.6 V	1.4 mm			9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 256K X 16	e0					12 mm	100 ns
TH50VSF3683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0					12 mm	80 ns
TH50VSF0401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0321BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0				.00003 Amp	12 mm	100 ns
TH50VSF3681AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0					12 mm	90 ns
TH50VSF4682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.1 V	1.4 mm			10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0					12 mm	80 ns
TH50VSF1420AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX16	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0					14 mm
TH50VSF1461AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		131072 words		3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		128KX16	128K	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	2097152 bit	2.7 V							14 mm
TH50VSF1320AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX8	1M	-20 Cel		BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8						12 mm
TH50VSF1303AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0					12 mm
TH50VSF0303BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		1MX8	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8	e0				.00003 Amp	12 mm	100 ns
TH50VPN5640EBSB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.4 mm			9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 32MBIT PSEUDO SRAM						12 mm	85 ns
TC51WHM716AXGN70	Toshiba		OTHER	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			55 mA	8388608 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B69							Not Qualified	134217728 bit							.000003 Amp		70 ns
TH50VSF4683AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.1 V	1.4 mm			10 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 1M X 16 OR 2M X 8	e0					12 mm	80 ns
TH50VSF1461ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			60 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0400AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	131072 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		128KX8	128K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	1048576 bit	2.7 V		e0				.00003 Amp	14 mm	100 ns
TH50VSF1420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF3580AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0					12 mm	90 ns
TH50VSF1320ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1401ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0303AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0				.00004 Amp	12 mm	100 ns
TH50VSF0421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0320AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0					12 mm
TH50VSF0302AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0				.00004 Amp	12 mm	100 ns
TH50VSF0420ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF3581AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0					12 mm	90 ns
TH50VSF1302AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0					12 mm
TH50VSF1460ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			60 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-25 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1421AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX16	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0					14 mm
TC51WKM716AXGN75	Toshiba		OTHER	69	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			55 mA	8388608 words	COMMON			1.8,3	16	GRID ARRAY, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel	3-STATE	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B69							Not Qualified	134217728 bit							.000003 Amp		75 ns
TH50VSF1303ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF1400AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	262144 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		256KX8	256K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	2097152 bit	2.7 V		e0				.00003 Amp	14 mm	100 ns
TH50VSF0401AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	2097152 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		2MX8	2M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	16777216 bit	2.7 V		e0				.00003 Amp	14 mm	100 ns
TH50VSF0321AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE				1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 128 K X 8	e0					12 mm
TH50VSF2480AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	1048576 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs		.8 mm	85 Cel		1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65		3.6 V	1.4 mm			9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 256K X 16	e0					12 mm	100 ns
TH50VSF1480AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	1048576 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs		.8 mm	85 Cel		1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B65		3.6 V	1.4 mm			9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 128K X 16						12 mm	100 ns
TH50VSF0320BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0				.00003 Amp	12 mm	100 ns
TH50VSF0400ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TYAD00AC00BUGK	Toshiba	MEMORY CIRCUIT	OTHER	224	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL							EEPROM+SDRAM	1.8,3/3.3		GRID ARRAY, FINE PITCH	BGA224,14X20,32	Other Memory ICs		.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B224							Not Qualified								.01 Amp		35 ns
TH50VSF1401AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	2097152 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		2MX8	2M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	16777216 bit	2.7 V		e0				.00003 Amp	14 mm	100 ns
TH50VSF3680AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		4MX16	4M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 8M SRAM MEMORY	e0					12 mm	90 ns
TH50VSF3583AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0					12 mm	80 ns
TH50VSF3582AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	50 mA	2097152 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs		.8 mm	85 Cel		2MX16	2M	-30 Cel	TIN LEAD	BOTTOM	R-PBGA-B69		3.3 V	1.4 mm			9 mm	Not Qualified	33554432 bit	2.67 V	USER CONFIGURABLE AS 4M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0					12 mm	80 ns
TH50VSF1302ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns
TH50VSF0321BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL		ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48		3.6 V	1.6 mm			10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0				.00003 Amp	12 mm	100 ns
TH50VSF1321ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL			40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs		1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48							Not Qualified				e0				.00003 Amp		100 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.