OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
KAB04D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
K5S3216Y0M-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		9 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM				12.5 mm
KBB06A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KBE00S009M-D4110	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	2	1.95 V	1.43 mm		12 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1			14 mm
M393T2950CZ0-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		4760 mA	134217728 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	9663676416 bit					.76 Amp		.6 ns
M474B1G73BH0-YH9	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1665 mA	1073741824 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	R-PDMA-N204				667 MHz		Not Qualified	77309411328 bit					.27 Amp		.255 ns
K5T6432YTM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words		3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM			.000005 Amp	10.8 mm	100 ns
KBB05B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16				13 mm
KBE00D002M-F4070	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS				13 mm
KBE00F005A-D411	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			2.7	FLASH+SDRAM	2.7		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel	MATTE TIN	BOTTOM	R-PBGA-B137	1					Not Qualified				e3		.001 Amp		30 ns
M392T5663DZA-CF7	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3820 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				400 MHz		Not Qualified	19327352832 bit				260			.4 ns
KBE00500AM-D437	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns
KBE00F005A-D4110	Samsung	MEMORY CIRCUIT	OTHER	137	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	20 mA	8388608 words		1.8	FLASH+SDRAM	2.7	32	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel		8MX32	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B137	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 64M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1		.001 Amp	13 mm	30 ns
KBB05A500M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KAL00B00CM-FG22	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.00005 Amp		10 ns
KAL00B00BM-FGXX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00005 Amp
K5Q5764G0M-F018	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	45 mA	16777216 words		1.8	FLASH+PSRAM	1.8/3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B111		1.95 V	1.4 mm		10 mm	Not Qualified	268435456 bit	1.7 V	UTRAM IS ORGANIZED AS 4M X 16			.00005 Amp	11 mm	85 ns
M474B5173BH0-YH9	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1485 mA	536870912 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N204				667 MHz		Not Qualified	38654705664 bit					.135 Amp
KAB01D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
M395T5750GZ4-CE69	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1960 mA	268435456 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240	3			333 MHz		Not Qualified	19327352832 bit				260
KBB06B400M-F4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	268435456 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16				13 mm
KBC00B7A0M-F4050	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B111		3.1 V	1.4 mm		11 mm	Not Qualified	268435456 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16				11 mm
K5Q6432YCM-T010	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	25 mA	8388608 words		3	FLASH+PSRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		8MX8	8M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 2M X 16 UTRAM			.00015 Amp	13 mm	100 ns
K5D5657ACM-F015	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		65 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.000001 Amp		15 ns
KBB06A300M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
K5N1229ACD-BQ120	Samsung	MEMORY CIRCUIT	OTHER	56	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm		8 mm		536870912 bit	1.7 V	SRAM IS ORGANISED AS 8M X 16				9.2 mm
KBB05A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KAB01D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
KAL00B00BM-FGXX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
K5P2880YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	30 mA	16777216 words		3	FLASH+SRAM	3	8	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	134217728 bit	2.7 V	ALSO CONTAINS (1MX8 / 512KX16) FULL CMOS SRAM			.000005 Amp	13 mm	10000 ns
M392T5663DZA-CE6	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3435 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				333 MHz		Not Qualified	19327352832 bit				260			.45 ns
K1S321615A-E	Samsung		OTHER	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.9		2.9	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B48						Not Qualified	33554432 bit					.00001 Amp		85 ns
KAB01D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
KBB05A500M-T4020	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 4M X 16				13 mm
M391T5663AZ3-CCC00	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2700 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit					.27 Amp		.6 ns
M392T2863DZA-CF7	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3030 mA	134217728 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				400 MHz		Not Qualified	9663676416 bit				260	.135 Amp		.4 ns
KAG00H008M-FGG2	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA			3.3	FLASH+SDRAM	3.3		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.00005 Amp
M392T5663DZA-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2935 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	19327352832 bit				260			.6 ns
KAA00B606A-TGPX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 4M X 16				12 mm
M395T5160CZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			536870912 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
M391B5673GB0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1233 mA	268435456 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	19327352832 bit					.18 Amp		.255 ns
M474B5173BH0-YK0	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1530 mA	536870912 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N204				800 MHz		Not Qualified	38654705664 bit					.135 Amp
M391T5663AZ3-CD500	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2925 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit					.27 Amp		.5 ns
M395T2953EZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3050 mA	134217728 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				266 MHz		Not Qualified	9663676416 bit
KAB02D100M-TLGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KAA00B209M-TGQX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 2M X 16 X 4 BANKS; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KAB01D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
K5P6480YCM-T085	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		8MX8	8M	-25 Cel		BOTTOM	R-PBGA-B69		3.3 V	1.2 mm		8 mm	Not Qualified	67108864 bit	2.7 V	IT ALSO CONTAINS 1M X 8/512K X 16 SRAM				13 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.