OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
MC-22105F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48						Not Qualified				e0		.00002 Amp		100 ns
MC-22003F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA			PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM							Not Qualified				e0		.000002 Amp		100 ns
MC-222262F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		2097152 words		3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77		3.6 V	1.2 mm		7 mm	Not Qualified	33554432 bit	2.7 V	CONTAINS 512K X 16 BIT SRAM				12 mm
UPD4664312F9-E10X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		100 ns
UPD46128512F9-E10X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA	8388608 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel		BOTTOM	R-PBGA-B93						Not Qualified	134217728 bit					.00025 Amp		85 ns
UPD46128953F1-E15X-EB1	Renesas Electronics		OTHER	127	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		55 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	S-PBGA-B127				66 MHz		Not Qualified	134217728 bit
MC-222252AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
UPD4664312-BE75X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		45 mA	4194304 words	COMMON			1.8,3	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		75 ns
UPD4632312F9-BE95X-BT3	Renesas Electronics		OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON			1.8,3	16	GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified	33554432 bit					.0001 Amp		95 ns
MC-22106F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48						Not Qualified				e0		.00002 Amp		100 ns
MC-22001F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA			PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM							Not Qualified				e0		.000002 Amp		100 ns
MC-24222311F9-E95X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	1.8/3,3		GRID ARRAY, FINE PITCH	BGA85,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B85						Not Qualified						.00001 Amp		95 ns
UPD4664312F9-CE90X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON			1.8/2,2.5	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		90 ns
MC-222243AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
MC-24212361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V	1.21 mm		8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V				11 mm
MC-24212361F9-D85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm		8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V				11 mm
UPD46128953F1-E12X-EB1	Renesas Electronics		OTHER	127	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA	4194304 words	COMMON	1.8		1.8	32	GRID ARRAY, FINE PITCH	BGA127,14X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX32	4M	-25 Cel		BOTTOM	S-PBGA-B127				83 MHz		Not Qualified	134217728 bit
UPD4664312F9-E85X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON			1.8/2	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		85 ns
UPD4664312F9-C85X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON	2.5		2.5	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		85 ns
UPD4664312-B65X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		45 mA	4194304 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		65 ns
MC-24212361F9-E10X-CDX	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		1048576 words		1.8			16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V			8 mm		16777216 bit	1.65 V	ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM				11 mm
MC-222263F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		50 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
MC-222244AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
UPD4616112F9-B95LX-BC2	Renesas Electronics		OTHER	48	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON			2.7/3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B48						Not Qualified	16777216 bit					.00001 Amp		95 ns
MC-222273F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		50 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
MC-22002F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA			PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM							Not Qualified				e0		.000002 Amp		100 ns
MC-222264F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		50 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
UPD4664312F9-BE85X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON			1.8/2,3	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93						Not Qualified	67108864 bit					.00001 Amp		85 ns
UPD46128512F9-E11X-CR2	Renesas Electronics		OTHER	93	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA	8388608 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel		BOTTOM	R-PBGA-B93						Not Qualified	134217728 bit					.00025 Amp		70 ns
MC-222253AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77						Not Qualified								85 ns
MC-22006F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA			PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM							Not Qualified				e0		.00002 Amp		100 ns
MC-22222361F9-D80X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85		2.1 V	1.21 mm		8 mm	Not Qualified	67108864 bit	1.8 V	SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY				11 mm
MC-24212361F9-E90X-CDX	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		1048576 words		1.8			16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B85		1.95 V			8 mm		16777216 bit	1.65 V	ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM				11 mm
M393T6553CZ0-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2570 mA	67108864 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	4831838208 bit					.54 Amp		.6 ns
KAJ000A30M-FLLL	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	45 mA	4194304 words		2.9	PSRAM+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B111		3.1 V	1.4 mm		10 mm	Not Qualified	67108864 bit	2.7 V	SRAM IS ORGANISED AS 512K X 16			.00002 Amp	11 mm	70 ns
M395T6553EZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3380 mA	67108864 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240				333 MHz		Not Qualified	4831838208 bit					.451 Amp
KAL00B00BM-FGXV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00005 Amp
KAB02D100M-TLGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
M395T2953GZ4-CE69	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1960 mA	134217728 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240	3			333 MHz		Not Qualified	9663676416 bit				260
K522H1HACF-B050	Samsung	MEMORY CIRCUIT	OTHER	153	FBGA		SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL		25 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA153,14X14,20	Other Memory ICs	.5 mm	85 Cel				-25 Cel		BOTTOM	S-PBGA-B153						Not Qualified						.002 Amp
M392B1K73CM0-YF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2790 mA	1073741824 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	R-PDMA-N240				533 MHz		Not Qualified	77309411328 bit				260	1.002 Amp		.3 ns
KAA00B209M-TGQX	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		90 ns
KAA00B209M-TGQV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		90 ns
KBB06A300M-T402	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		40 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00002 Amp		70 ns
KBC00B7A0M-D405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B111						Not Qualified						.000015 Amp		70 ns
KAG00E007M-FGGV0	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				13 mm
M474B5173BH0-YF8	Samsung		OTHER	204	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1170 mA	536870912 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM204,24	Other Memory ICs	.6 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N204				533 MHz		Not Qualified	38654705664 bit					.135 Amp
K5D5657DCM-F015	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		65 mA				FLASH+SDRAM	1.8,2.65		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.00005 Amp		45 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.