OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Refresh Cycles	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
M391B2873GB0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1125 mA	134217728 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	9663676416 bit				260	.09 Amp		.255 ns
KA100O015E-BJTT0	Samsung	MEMORY CIRCUIT	OTHER	137	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		67108864 words		1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel		64MX16	64M	-25 Cel		BOTTOM	R-PBGA-B137		1.95 V	1.2 mm		10.5 mm		1073741824 bit	1.7 V	SRAM IS ORGANISED AS 64M X 32 PLUS 64M X 32				13 mm
M392B1K73CM0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3275 mA	1073741824 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	1GX72	1G	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	77309411328 bit				260	1.042 Amp		.255 ns
K5L5628JTM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-30 Cel		BOTTOM	R-PBGA-B115		1.95 V	1.4 mm		8 mm	Not Qualified	268435456 bit	1.7 V					12 mm
K5D1G13ACD-D075	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns
KAL00B00BM-FGVV0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
KAB03D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
K5S3216Y0A-T385	Samsung	MEMORY CIRCUIT	OTHER	69	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	35 mA	2097152 words		2.9	PSRAM+SRAM	2.9	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA69,10X10,32	Other Memory ICs	.8 mm	85 Cel		2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B69		3.1 V	1.2 mm		8 mm	Not Qualified	33554432 bit	2.7 V	ALSO CONTAINS 1M X 16 BIT FULL CMOS SRAM			.00001 Amp	11 mm	85 ns
M393T5750CZ0-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		6420 mA	268435456 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	19327352832 bit							.5 ns
KBE00S003M-D4110	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B107	2	1.95 V	1.4 mm		12 mm	Not Qualified	268435456 bit	1.7 V	NAND FLASH IS ORGANIZED AS 128M X 8; NAND FLASH OPERATES AT 2.5V TO 2.9V SUPPLY	e1			14 mm
K5L5628JBM-DH180	Samsung	MEMORY CIRCUIT	OTHER	115	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-30 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B115	2	1.95 V	1.4 mm		8 mm	Not Qualified	268435456 bit	1.7 V		e1			12 mm
M391B5273CH0-YF8	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		1710 mA	536870912 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240				533 MHz		Not Qualified	38654705664 bit				260
M391B5273CH0-YH9	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2025 mA	536870912 words	COMMON	1.35		1.35	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240				667 MHz		Not Qualified	38654705664 bit				260
KAE00C400M-TGNN0	Samsung	MEMORY CIRCUIT	OTHER	111	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		16777216 words		2.5			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX8	16M	-25 Cel		BOTTOM	R-PBGA-B111		2.7 V	1.4 mm		10 mm	Not Qualified	134217728 bit	2.3 V	UTRAM IS ORGANIZED AS 4M X 16; FLASH OPERATES AT 2.7V TO 3.6V SUPPLY				11 mm
K5D1G13ACD-D075000	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		20 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		30 ns
K5L5628JTM-DH18	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		70 mA				FLASH+PSRAM	1.8,2.5		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B115						Not Qualified						.00007 Amp		88.5 ns
M393T2950CZ0-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		5090 mA	134217728 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	9663676416 bit					.82 Amp		.5 ns
KAE00C400M-TGNN	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL						FLASH+PSRAM	2.5,3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B111						Not Qualified						.00005 Amp		80 ns
M395T5160CZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			536870912 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
KAB03D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
KAL00B00BM-FGVX0	Samsung	MEMORY CIRCUIT	OTHER	127	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B127		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 8 X 4 BANKS; NAND FLASH SUPPLY 1.7 V TO 1.95 V				12 mm
K5T6432YBM-T310	Samsung	MEMORY CIRCUIT	OTHER	81	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	200 mA	4194304 words		3	FLASH+PSRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA81,12X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B81		3.3 V	1.2 mm		10.4 mm	Not Qualified	67108864 bit	2.7 V	ALSO CONTAINS 2M X 16 BIT UTRAM			.000005 Amp	10.8 mm	100 ns
KBC00B7A0M-F405	Samsung	MEMORY CIRCUIT	OTHER	111	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+PSRAM+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA111,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B111						Not Qualified						.000015 Amp		70 ns
M395T5263AZ4-CD58	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3500 mA	536870912 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
M395T6553EZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3050 mA	67108864 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240				266 MHz		Not Qualified	4831838208 bit					.396 Amp
KAA00B209M-TGSV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+PSRAM+SRAM	1.8,3		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00001 Amp		100 ns
KBF090800M-D408	Samsung	MEMORY CIRCUIT	OTHER	115	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		100 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA115,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B115						Not Qualified						.00003 Amp		88.5 ns
KAG00J007M-FGG2	Samsung	MEMORY CIRCUIT	OTHER	107	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA				FLASH+SDRAM	1.8,2.6		GRID ARRAY, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B107						Not Qualified						.000001 Amp		45 ns
KBE00G003M-D4110	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	20 mA	67108864 words		1.8	FLASH+SDRAM	1.8	8	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA107,10X14,32	Other Memory ICs	.8 mm	85 Cel		64MX8	64M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B107	2	1.95 V	1.4 mm		10.5 mm	Not Qualified	536870912 bit	1.7 V	SDRAM IS ORGANIZED AS 8M X 8 X 4 BANKS	e1		.001 Amp	13 mm	35 ns
M395T5750EZ4-CD52	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3500 mA	268435456 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				266 MHz		Not Qualified	19327352832 bit
M393T6553CZ0-CD5	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2705 mA	67108864 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240				267 MHz		Not Qualified	4831838208 bit					.58 Amp		.5 ns
KBC00A6A0M-T4030	Samsung	MEMORY CIRCUIT	OTHER	87	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B87		3.1 V	1.4 mm		10 mm	Not Qualified	134217728 bit	2.7 V	SRAM IS ORGANIZED AS 512K X 16; UTRAM IS ORGANIZED AS 4M X 16 AND 2M X16				12 mm
KAL00B00CM-FG220	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		16777216 words		1.8			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		16MX16	16M	-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.7 V	SDRAM IS ORGANIZED AS 8M X 8 X 4 BANKS				13 mm
M395T5750EZ4-CE62	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		3380 mA	268435456 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	256MX72	256M	0 Cel		DUAL	R-PDMA-N240				333 MHz		Not Qualified	19327352832 bit
KAG00J007M-FGG20	Samsung	MEMORY CIRCUIT	OTHER	107	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		33554432 words		1.8			8	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		32MX8	32M	-25 Cel		BOTTOM	R-PBGA-B107		1.95 V	1.4 mm		10.5 mm	Not Qualified	268435456 bit	1.65 V	SDRAM IS ORGANIZED AS 4M X 16 X 4 BANKS; NAND FLASH SUPPLY 2.4 V TO 2.9 V				13 mm
KAL00B00BM-FGVV	Samsung	MEMORY CIRCUIT	OTHER	127	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA127,12X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B127						Not Qualified						.00005 Amp
KBE00D002M-F407	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		100 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.000001 Amp		45 ns
M395T5263AZ4-YE68	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			536870912 words	COMMON			1.5,1.55	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	85 Cel	3-STATE	512MX72	512M	0 Cel		DUAL	R-PDMA-N240						Not Qualified	38654705664 bit
KAB02D100M-TNGP0	Samsung	MEMORY CIRCUIT	OTHER	80	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words		2.9			16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B80		3.1 V	1.4 mm		8 mm	Not Qualified	134217728 bit	2.7 V	NOR FLASH IS ORGANIZED AS 8M X 8 / 4M X 16; UTRAM IS ORGANIZED AS 2M X 16				12 mm
M392T2863DZA-CCC	Samsung		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD		2385 mA	134217728 words	COMMON	1.8		1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	128MX72	128M	0 Cel		DUAL	R-PDMA-N240				200 MHz		Not Qualified	9663676416 bit				260	.135 Amp		.6 ns
KAA00BB07M-DGUV	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		15 mA			1.8	FLASH+PSRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.001 Amp		85 ns
KA100O015E-BJTT	Samsung	MEMORY CIRCUIT	OTHER	137	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		25 mA			1.8	FLASH+SDRAM	1.8		GRID ARRAY, FINE PITCH	BGA137,10X15,32	Other Memory ICs	.8 mm	85 Cel				-30 Cel		BOTTOM	R-PBGA-B137						Not Qualified						.002 Amp
KAB02D100M-TNGP	Samsung	MEMORY CIRCUIT	OTHER	80	FBGA		RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA80,8X13,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B80						Not Qualified						.00001 Amp		85 ns
MT28C256532W18SBT-F606P85BBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 2M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm
MT28C64432W18ABW-F70P85TWT	Micron Technology	MEMORY CIRCUIT	OTHER	77	TFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words		1.8	FLASH+SRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA77,8X10,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B77		1.95 V	1.2 mm		8 mm	Not Qualified	67108864 bit	1.7 V	CELLULAR RAM IS ORGANIZED AS 2M X 16	e1	260	.000135 Amp	10 mm	85 ns
MT28C256564W18TFT-F706P706TBWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm
MT9HTF6472FY-53EB2D1	Micron Technology		OTHER	240	DIMM	8192	RECTANGULAR	PLASTIC/EPOXY	NO		CMOS	NO LEAD			67108864 words	COMMON			1.5,1.8	72	MICROELECTRONIC ASSEMBLY	DIMM240,40	Other Memory ICs	1 mm	95 Cel	3-STATE	64MX72	64M	0 Cel		DUAL	R-PDMA-N240				266 MHz		Not Qualified	4831838208 bit
MT28C256564W18SBT-F606P85BTWT	Micron Technology	MEMORY CIRCUIT	OTHER	88	LFBGA		RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		8388608 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B88		1.95 V	1.4 mm		9 mm	Not Qualified	134217728 bit	1.7 V	CELLULARRAM IS ORGANIZED AS 4M X 16; CONTAINS ADDITIONAL 8M X 16 FLASH	e1			12 mm

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.