OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Standby Current	Length	Maximum Access Time
TH50VSF0320BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	524288 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		512KX16	512K	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8; FLASH MEMORY IS ORGANISED AS 1M X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1321AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			8	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX8	1M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS CONFIGURED AS 256 K X 8	e0		12 mm
TH50VSF0302BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF3682AASB	Toshiba	MEMORY CIRCUIT	OTHER	69	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	4194304 words		3	FLASH+SRAM	3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA69,10X12,32	Other Memory ICs	.8 mm	85 Cel		4MX16	4M	-20 Cel	TIN LEAD	BOTTOM	R-PBGA-B69	3.3 V	1.4 mm	9 mm	Not Qualified	67108864 bit	2.7 V	USER CONFIGURABLE AS 8M X 8 FLASH AND CONTAINS SRAM CONFIGURED AS 512K X 16 OR 1M X 8	e0		12 mm	80 ns
TH50VSF1481AASB	Toshiba	MEMORY CIRCUIT	OTHER	65	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	50 mA	1048576 words		3	FLASH+SRAM	3/3.3	16	GRID ARRAY, LOW PROFILE, FINE PITCH	BGA65,10X12,32	Other Memory ICs	.8 mm	85 Cel		1MX16	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B65	3.6 V	1.4 mm	9 mm	Not Qualified	16777216 bit	2.7 V	SRAM IS ORGANISED AS 128K X 16	e0		12 mm	100 ns
TH50VSF0302BAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	40 mA	1048576 words		3	FLASH+SRAM	3/3.3	8	GRID ARRAY, LOW PROFILE	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel		1MX8	1M	-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	8388608 bit	2.7 V	SRAM IS ORGANISED AS 128K X 8	e0	.00003 Amp	12 mm	100 ns
TH50VSF1460AAXB	Toshiba	MEMORY CIRCUIT	OTHER	48	LBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		1048576 words		3			16	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		1MX16	1M	-20 Cel		BOTTOM	R-PBGA-B48	3.6 V	1.6 mm	10 mm	Not Qualified	16777216 bit	2.7 V				14 mm
TH50VSF1421ACXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
TH50VSF0303BCXB	Toshiba	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00003 Amp		100 ns
THGBM3G5D1FBAIE	Toshiba	MEMORY CIRCUIT	OTHER	169	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		4294967296 words		3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		4GX8	4G	-25 Cel		BOTTOM	R-PBGA-B169	3.6 V	1.2 mm	12 mm		34359738368 bit	2.7 V				16 mm
THGBMHG8C2LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			34359738368 words					8	GRID ARRAY				85 Cel		32GX8	32G	-25 Cel		BOTTOM	R-PBGA-B153					274877906944 bit
THGBMHG7C1LBAIL	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			17179869184 words					8	GRID ARRAY				85 Cel		16GX8	16G	-25 Cel		BOTTOM	R-PBGA-B153					137438953472 bit
THGBMGG9U4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			68719476736 words					8	GRID ARRAY				85 Cel		64GX8	64G	-25 Cel		BOTTOM	R-PBGA-B153					549755813888 bit
THGBMHG9C4LBAIR	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			68719476736 words					8	GRID ARRAY				85 Cel		64GX8	64G	-25 Cel		BOTTOM	R-PBGA-B153					549755813888 bit
THGBM3G4D1FBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS		2147483648 words		3.3			8	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel		2GX8	2G	-25 Cel		BOTTOM	R-PBGA-B153	3.6 V	1.2 mm	11.5 mm		17179869184 bit	2.7 V				13 mm
THGBMHG8C2LBAILH40	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		34359738368 words			NAND+FLASH		8	GRID ARRAY				85 Cel		32GX8	32G	-25 Cel		BOTTOM	R-PBGA-B153					274877906944 bit
THGBMGT0U8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			137438953472 words					8	GRID ARRAY				85 Cel		128GX8	128G	-25 Cel		BOTTOM	R-PBGA-B153					1099511627776 bit
THGBMHT0C8LBAIG	Toshiba	MEMORY CIRCUIT	OTHER	153	BGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL			137438953472 words					8	GRID ARRAY				85 Cel		128GX8	128G	-25 Cel		BOTTOM	R-PBGA-B153					1099511627776 bit
MC-222272F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		50 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified							85 ns
MC-22107F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00002 Amp		100 ns
MC-24212361F9-E95X-CDX	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		1048576 words		1.8			16	GRID ARRAY, FINE PITCH			.8 mm	85 Cel		1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B85	1.95 V		8 mm		16777216 bit	1.65 V	ALSO OPERATES AT 2.6-3.1V, AND 4M X 16 RAM			11 mm
MC-24222311F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		35 mA				FLASH+SRAM	1.8,3.3		GRID ARRAY, FINE PITCH	BGA85,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B85				Not Qualified					.00001 Amp		85 ns
MC-22104F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48,6X8,40	Other Memory ICs	1 mm	85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM	R-PBGA-B48				Not Qualified				e0	.00002 Amp		100 ns
MC-222254AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified							85 ns
MC-24212361F9-D95X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85	2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
UPD4632312F9-CE10X-BT3	Renesas Electronics		OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON			1.8,2.5	16	GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified	33554432 bit				.0001 Amp		105 ns
MC-22222361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	MOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85	1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM IS ORGANISED AS 512K X 16 AND OPERATES AT 2.7V TO 3.1V SUPPLY			11 mm
MC-22000F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		70 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.000002 Amp		100 ns
MC-22005F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.00002 Amp		100 ns
MC-22212361F9-D80X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85	2.1 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.8 V	SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V			11 mm
MC-22102F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.000002 Amp		100 ns
MC-24212361F9-E95X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85	1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 1M X 16; SRAM SUPPLY VOLTAGE IS 2.6 TO 3.1V			11 mm
UPD4616112F9-B85LX-BC2	Renesas Electronics		OTHER	48	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	1048576 words	COMMON			2.7/3	16	GRID ARRAY, FINE PITCH	BGA48,6X8,30	Other Memory ICs	.75 mm	85 Cel	3-STATE	1MX16	1M	-25 Cel		BOTTOM	R-PBGA-B48				Not Qualified	16777216 bit				.00001 Amp		85 ns
MC-22007F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.00002 Amp		100 ns
UPD4632312F9-B85X-BT3	Renesas Electronics		OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	3		3	16	GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified	33554432 bit				.0001 Amp		85 ns
MC-222242AF9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		45 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified							85 ns
UPD46128512F9-E9X-CR2	Renesas Electronics		OTHER	93	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		60 mA	8388608 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel		BOTTOM	R-PBGA-B93				Not Qualified	134217728 bit				.00025 Amp		70 ns
UPD4632312F9-C95X-BT3	Renesas Electronics		OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		35 mA	2097152 words	COMMON	2.5		2.5	16	GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified	33554432 bit				.0001 Amp		95 ns
MC-22100F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.000002 Amp		100 ns
UPD4664312F9-CE80X-CR2	Renesas Electronics		OTHER	93	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON			1.8/2,2.5	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93				Not Qualified	67108864 bit				.00001 Amp		80 ns
MC-22004F1-DB1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.00002 Amp		100 ns
MC-22212361F9-E85X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	LFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS		4194304 words					16	GRID ARRAY, LOW PROFILE, FINE PITCH			.8 mm	85 Cel		4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B85	1.95 V	1.21 mm	8 mm	Not Qualified	67108864 bit	1.65 V	SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V			11 mm
MC-222274F9-B85X-BT3	Renesas Electronics	MEMORY CIRCUIT	OTHER	77	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		50 mA				FLASH+SRAM	3/3.3		GRID ARRAY, FINE PITCH	BGA77,8X14,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B77				Not Qualified							85 ns
MC-22101F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.000002 Amp		100 ns
MC-22103F1-DE1-B10	Renesas Electronics	MEMORY CIRCUIT	OTHER	48	BGA		PLASTIC/EPOXY	YES		HYBRID	BALL		75 mA				FLASH+SRAM	3/3.3		GRID ARRAY	BGA48(UNSPEC)	Other Memory ICs		85 Cel				-20 Cel	Tin/Lead (Sn/Pb)	BOTTOM					Not Qualified				e0	.000002 Amp		100 ns
UPD4664312F9-C75X-CR2	Renesas Electronics		OTHER	93	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL			4194304 words	COMMON	2.5		2.5	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B93				Not Qualified	67108864 bit				.00001 Amp		75 ns
MC-24222311F9-E90X-CD5	Renesas Electronics	MEMORY CIRCUIT	OTHER	85	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		HYBRID	BALL		40 mA				FLASH+SRAM	1.8/3,3		GRID ARRAY, FINE PITCH	BGA85,10X12,32	Other Memory ICs	.8 mm	85 Cel				-25 Cel		BOTTOM	R-PBGA-B85				Not Qualified					.00001 Amp		95 ns
UPD46128512F9-E12X-CR2	Renesas Electronics		OTHER	93	FBGA	RECTANGULAR	PLASTIC/EPOXY	YES		CMOS	BALL		50 mA	8388608 words	COMMON	1.8		1.8	16	GRID ARRAY, FINE PITCH	BGA93,10X14,32	Other Memory ICs	.8 mm	85 Cel	3-STATE	8MX16	8M	-30 Cel		BOTTOM	R-PBGA-B93				Not Qualified	134217728 bit				.00025 Amp		85 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.