OTHER Other Function Memory ICs 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Operating Mode	No. of Words	Nominal Supply Voltage / Vsup (V)	Mixed Memory Type	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Organization	No. of Words Code	Minimum Operating Temperature	Terminal Finish	Terminal Position	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Length	Maximum Access Time
S71GL064NA0BHW0Z3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71NS128NA0BJWSF0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S71NS128NA0BJWMD2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72XS256RE0AHBHD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71GL064NB0BFW0P3	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	FBGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL			3	FLASH+PSRAM	3		GRID ARRAY, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel			-25 Cel		BOTTOM	S-PBGA-B56					Not Qualified								90 ns
S98WS064RBOHW0013	Infineon Technologies	MEMORY CIRCUIT	OTHER	88	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	4194304 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel		BOTTOM	R-PBGA-B88		1.95 V	1.2 mm	8 mm	Not Qualified	67108864 bit	1.7 V					10 mm
S72WS01GSF0YHMJ52	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S72XS01GSF0YHMG53	Infineon Technologies	MEMORY CIRCUIT	OTHER	186			PLASTIC/EPOXY	YES		CMOS				1.8	FLASH+SDRAM	1.8			BGA186,13X17,25	Other Memory ICs		85 Cel			-25 Cel								Not Qualified
S71NS128NA0BJWMZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72XS256RE0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S71GL032NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S71XS256RD0ZHEC00	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16X16	16	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm	Not Qualified	256 bit	1.7 V	PSRAM IS ORGANIZED AS 8M X 16				9.2 mm
S72XS256RD0AHBJD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S71GL032N40BHW0P2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	2MX16	2M	-25 Cel		BOTTOM	R-PBGA-B56		3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 256K X 16				9 mm
S72NS256RD0KHFM00	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S72NS512RE0AHGL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B133		1.95 V	1 mm	10 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16				11 mm
S72XS128RD0AHBGD0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V					8 mm
S71NS128NA0BJWSZ2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S72XS256RD0AHBGE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S72NS256RD0KHFG03	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
S71NS128NA0BJWMZ0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S72XS128RD0AHBJE0	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V					8 mm
S72NS512RE0KHFG40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16				12 mm
S72XS01GSF0YHMG50	Infineon Technologies	MEMORY CIRCUIT	OTHER	186			PLASTIC/EPOXY	YES		CMOS				1.8	FLASH+SDRAM	1.8			BGA186,13X17,25	Other Memory ICs		85 Cel			-25 Cel								Not Qualified
S72NS128RD0AHBL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	134217728 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				8 mm
S71GL032NA0BHW0Z0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	2097152 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	2MX16	2M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	33554432 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S72NS512RE0KHFL43	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	536870912 bit	1.7 V	DRAM IS ORGANISED AS 16M X 16				12 mm
S72XS256RE0AHBHE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		268435456 bit	1.7 V					8 mm
S98NS128NB0HW0020	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	8 mm		134217728 bit	1.7 V					9.2 mm
S71NS128NA0BJWMW2	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71NS128NA0BJWMN3	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	6.285 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			7.7 mm
S71NS128NA0BJWSP0	Infineon Technologies	MEMORY CIRCUIT	OTHER	44	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B44	3	1.95 V	1.2 mm	8 mm	Not Qualified	134217728 bit	1.7 V	PSRAM IS ORGANIZED AS 1M X 16; SYNCHRONOUS BURST MODE ALSO POSSIBLE	e1			9.2 mm
S71GL128PC0HH30Y2	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V					11.6 mm
S71GL064NB0BFW0Z2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	4MX16	4M	-25 Cel	Tin/Silver/Copper (Sn96.5Ag3.0Cu0.5)	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 2M X 16	e1	40	260	9 mm
S71NS512RD0ZHEKL2	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.5 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B56		1.95 V	1.2 mm	6.2 mm	Not Qualified	536870912 bit	1.7 V	PSRAM IS ORGANISED AS 128 MB(8 MB X 16-BIT)				7.7 mm
S72XS128RD0AHBH13	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	8388608 words	1.8			16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH			.5 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm		134217728 bit	1.7 V					8 mm
S72WS01GSF0YHMJ33	Infineon Technologies	MEMORY CIRCUIT	OTHER	186	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	33554432 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA186,13X17,25	Other Memory ICs	.65 mm	85 Cel	32MX16	32M	-25 Cel		BOTTOM	R-PBGA-B186		1.95 V	1.2 mm	11 mm	Not Qualified	536870912 bit	1.7 V	512 MBIT SDRAM				13 mm	100 ns
S72XS256RD0AHBHD3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S71GL128PC0HH30Y3	Infineon Technologies	MEMORY CIRCUIT	OTHER	84	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	8388608 words	3			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.8 mm	85 Cel	8MX16	8M	-25 Cel		BOTTOM	R-PBGA-B84		3.1 V	1.2 mm	8 mm	Not Qualified	134217728 bit	2.7 V					11.6 mm
S71GL064NA0BHW0U0	Infineon Technologies	MEMORY CIRCUIT	OTHER	56	TFBGA	RECTANGULAR	PLASTIC/EPOXY	YES	1	CMOS	BALL	ASYNCHRONOUS	4194304 words	3	FLASH+SRAM	3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA56,8X8,32	Other Memory ICs	.8 mm	85 Cel	4MX16	4M	-25 Cel	TIN SILVER COPPER	BOTTOM	R-PBGA-B56	3	3.1 V	1.2 mm	7 mm	Not Qualified	67108864 bit	2.7 V	PSRAM IS ORGANIZED AS 1M X 16	e1	40	260	9 mm	90 ns
S72XS256RD0AHBJE3	Infineon Technologies	MEMORY CIRCUIT	OTHER	133	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA133,14X14,20	Other Memory ICs	.5 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B133		1.95 V	1 mm	8 mm	Not Qualified	268435456 bit	1.7 V					8 mm
S75WS256PEFKFFLW3	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8			16	GRID ARRAY, THIN PROFILE, FINE PITCH			.65 mm	85 Cel	16MX16	16M	-25 Cel	TIN SILVER COPPER	BOTTOM	S-PBGA-B128		1.95 V	1.15 mm	12 mm	Not Qualified	268435456 bit	1.7 V		e1			12 mm
S72NS256RD0KHFL40	Infineon Technologies	MEMORY CIRCUIT	OTHER	128	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	SYNCHRONOUS	16777216 words	1.8	FLASH+SDRAM	1.8	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA128,18X18,25	Other Memory ICs	.65 mm	85 Cel	16MX16	16M	-25 Cel		BOTTOM	S-PBGA-B128		1.95 V	1.05 mm	12 mm	Not Qualified	268435456 bit	1.7 V	DRAM IS ORGANISED AS 8M X 16				12 mm
DS1963L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4096 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel	4KX1	4K	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED
DS1991L-F5+	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1152 words				1	DISK BUTTON				70 Cel	1152X1	1152	-40 Cel	MATTE TIN	END	O-MEDB-N2		6 V			Not Qualified	1152 bit	2.8 V		e3
MAX66020K-000AA+	Maxim Integrated	MEMORY CIRCUIT	OTHER			UNSPECIFIED	PLASTIC/EPOXY	NO	1	CMOS	UNSPECIFIED	SYNCHRONOUS	1024 words				1	SPECIAL SHAPE				50 Cel	1KX1	1K	-25 Cel		UNSPECIFIED	X-PXSS-X						1024 bit				NOT SPECIFIED	NOT SPECIFIED
DS1963L-F5+	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	4096 words				1	DISK BUTTON				70 Cel	4KX1	4K	-40 Cel	MATTE TIN	END	O-MEDB-N2		6 V			Not Qualified	4096 bit	2.8 V		e3
DS1991L-F5	Maxim Integrated	MEMORY CIRCUIT	OTHER	2		ROUND	METAL	YES	1	CMOS	NO LEAD	ASYNCHRONOUS	1152 words			3/5	1	DISK BUTTON	BUTTON,.68IN	SRAMs		70 Cel	1152X1	1152	-40 Cel		END	O-MEDB-N2		6 V			Not Qualified	1152 bit	2.8 V		e0	NOT SPECIFIED	NOT SPECIFIED		15000 ns

Other Function Memory ICs

Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.

One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.

Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.

Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.