Part | RoHS | Manufacturer | Memory IC Type | Temperature Grade | No. of Terminals | Package Code | Refresh Cycles | Package Shape | Total Dose (V) | Package Body Material | Access Mode | Surface Mount | No. of Functions | Technology | Screening Level | Terminal Form | Parallel or Serial | Operating Mode | Sector Size (Words) | Maximum Supply Current | No. of Words | Sequential Burst Length | Self Refresh | Input/Output Type | Nominal Supply Voltage / Vsup (V) | Mixed Memory Type | Toggle Bit | Power Supplies (V) | Memory Width | Package Style (Meter) | Package Equivalence Code | Sub-Category | Minimum Data Retention Time | Terminal Pitch | Maximum Operating Temperature | Reverse Pinout | Output Characteristics | Organization | No. of Words Code | Minimum Standby Voltage | Minimum Operating Temperature | No. of Sectors/Size | Command User Interface | Terminal Finish | I2C Control Byte | Terminal Position | No. of Ports | Write Protection | JESD-30 Code | Moisture Sensitivity Level (MSL) | Maximum Supply Voltage (Vsup) | Maximum Seated Height | Endurance | Maximum Clock Frequency (fCLK) | Width | Qualification | Serial Bus Type | Boot Block | Memory Density | Minimum Supply Voltage (Vsup) | Additional Features | Page Size (words) | JESD-609 Code | Maximum Time At Peak Reflow Temperature (s) | Peak Reflow Temperature (C) | Type | Maximum Standby Current | Interleaved Burst Length | Length | Common Flash Interface | Maximum Access Time | Programming Voltage (V) | Data Polling |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
750 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
301989888 bit |
.05 Amp |
60 ns |
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Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
40 |
TSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
200 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE, THIN PROFILE |
TSOP40/44,.46,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G40 |
Not Qualified |
2097152 bit |
e0 |
.0002 Amp |
80 ns |
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Renesas Electronics |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
1 |
CMOS |
THROUGH-HOLE |
PARALLEL |
ASYNCHRONOUS |
4096 words |
5 |
8 |
IN-LINE |
70 Cel |
4KX8 |
4K |
0 Cel |
TIN LEAD |
DUAL |
R-PDIP-T24 |
5.5 V |
32768 bit |
4.5 V |
e0 |
300 ns |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1035 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
100 MHz |
Not Qualified |
603979776 bit |
.0045 Amp |
7 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
2.16 mm |
5.18 mm |
4194304 bit |
2.7 V |
e3 |
260 |
5.23 mm |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
75 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48(UNSPEC) |
Other Memory ICs |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
Not Qualified |
e0 |
.000002 Amp |
100 ns |
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Renesas Electronics |
OTHER |
93 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
BALL |
4194304 words |
COMMON |
1.8/2,2.5 |
16 |
GRID ARRAY, FINE PITCH |
BGA93,10X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
3-STATE |
4MX16 |
4M |
-25 Cel |
BOTTOM |
R-PBGA-B93 |
Not Qualified |
67108864 bit |
.00001 Amp |
80 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
105 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
3.6 V |
.8 mm |
5 mm |
4194304 bit |
2.7 V |
e3 |
260 |
6 mm |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
65536 words |
5 |
5 |
4 |
IN-LINE |
DIP24,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
64KX4 |
64K |
0 Cel |
DUAL |
R-PDIP-T24 |
Not Qualified |
262144 bit |
120 ns |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
48 |
BGA |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
75 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY |
BGA48(UNSPEC) |
Other Memory ICs |
85 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
BOTTOM |
Not Qualified |
e0 |
.00002 Amp |
100 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
2097152 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
3.6 V |
.8 mm |
5 mm |
16777216 bit |
2.7 V |
e3 |
260 |
6 mm |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
2048 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1810 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
25.4 mm |
Not Qualified |
301989888 bit |
.05 Amp |
60 ns |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
5 |
5 |
SMALL OUTLINE |
SOP24,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
e0 |
.09 Amp |
21 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
1048576 words |
1.8 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
105 Cel |
1MX8 |
1M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
2 V |
2.16 mm |
5.18 mm |
8388608 bit |
1.71 V |
e3 |
260 |
5.23 mm |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
524288 words |
3 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
3.6 V |
.8 mm |
5 mm |
4194304 bit |
2.7 V |
e3 |
260 |
6 mm |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
524288 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
85 Cel |
512KX8 |
512K |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
2 V |
.8 mm |
5 mm |
4194304 bit |
1.71 V |
e3 |
260 |
6 mm |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
165 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
e0 |
.001 Amp |
60 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
77 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
45 mA |
FLASH+SRAM |
2.6/3 |
GRID ARRAY, FINE PITCH |
BGA77,8X14,32 |
Other Memory ICs |
.8 mm |
70 Cel |
-20 Cel |
BOTTOM |
R-PBGA-B77 |
Not Qualified |
.00001 Amp |
90 ns |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
85 |
LFBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
BALL |
ASYNCHRONOUS |
4194304 words |
16 |
GRID ARRAY, LOW PROFILE, FINE PITCH |
.8 mm |
85 Cel |
4MX16 |
4M |
-25 Cel |
BOTTOM |
R-PBGA-B85 |
1.95 V |
1.21 mm |
8 mm |
Not Qualified |
67108864 bit |
1.65 V |
SRAM ORGANISATION IS 256K X 16; SRAM SUPPLY VOLTAGE IS 2.7 TO 3.1V |
11 mm |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
OTHER |
77 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
50 mA |
FLASH+SRAM |
3/3.3 |
GRID ARRAY, FINE PITCH |
BGA77,8X14,32 |
Other Memory ICs |
.8 mm |
85 Cel |
-25 Cel |
BOTTOM |
R-PBGA-B77 |
Not Qualified |
85 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
71 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
45 mA |
FLASH+SRAM |
2.6/3 |
GRID ARRAY, FINE PITCH |
BGA71,8X12,32 |
Other Memory ICs |
.8 mm |
70 Cel |
-20 Cel |
BOTTOM |
R-PBGA-B71 |
Not Qualified |
.00001 Amp |
100 ns |
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|
Renesas Electronics |
MATTE TIN |
1 |
e3 |
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Renesas Electronics |
MEMORY CIRCUIT |
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Renesas Electronics |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
28 |
DIP |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
MOS |
THROUGH-HOLE |
55 mA |
8192 words |
COMMON |
5 |
5 |
8 |
IN-LINE |
DIP28,.6 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
8KX8 |
8K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDIP-T28 |
Not Qualified |
65536 bit |
e0 |
200 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
32 |
TSSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
10 mA |
ROM+SRAM |
1.8/3.3 |
SMALL OUTLINE, THIN PROFILE, SHRINK PITCH |
TSSOP32,.8,20 |
Other Memory ICs |
.5 mm |
70 Cel |
-10 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G32 |
Not Qualified |
e0 |
.0000065 Amp |
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Renesas Electronics |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
64 |
SSOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
115 mA |
262144 words |
5 |
5 |
16 |
SMALL OUTLINE, SHRINK PITCH |
SOP64,.54,32 |
Other Memory ICs |
.8 mm |
70 Cel |
256KX16 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G64 |
Not Qualified |
4194304 bit |
e0 |
.0002 Amp |
80 ns |
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Renesas Electronics |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1099 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.0685 Amp |
60 ns |
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Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
8192 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
985 mA |
8388608 words |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
8MX72 |
8M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
603979776 bit |
.041 Amp |
50 ns |
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Renesas Electronics |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
HVSON |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
NO LEAD |
SYNCHRONOUS |
1048576 words |
1.8 |
8 |
SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE |
SOLCC8,.25 |
1.27 mm |
85 Cel |
1MX8 |
1M |
-40 Cel |
TIN |
DUAL |
R-PDSO-N8 |
3 |
2 V |
.8 mm |
5 mm |
8388608 bit |
1.71 V |
e3 |
260 |
6 mm |
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Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
130 mA |
131072 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
128KX8 |
128K |
0 Cel |
DUAL |
R-PDSO-J40 |
Not Qualified |
1048576 bit |
.007 Amp |
70 ns |
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|
Renesas Electronics |
MEMORY CIRCUIT |
8 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
1 |
CMOS |
GULL WING |
SYNCHRONOUS |
2097152 words |
3 |
8 |
SMALL OUTLINE |
SOP8,.3 |
1.27 mm |
105 Cel |
2MX8 |
2M |
-40 Cel |
TIN |
DUAL |
R-PDSO-G8 |
3 |
3.6 V |
2.16 mm |
5.18 mm |
16777216 bit |
2.7 V |
e3 |
260 |
5.23 mm |
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Renesas Electronics |
COMMERCIAL |
22 |
DIP |
64 |
RECTANGULAR |
CERAMIC |
NO |
MOS |
THROUGH-HOLE |
4096 words |
SEPARATE |
1 |
IN-LINE |
DIP22,.4 |
Other Memory ICs |
2.54 mm |
70 Cel |
3-STATE |
4KX1 |
4K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-XDIP-T22 |
Not Qualified |
4096 bit |
e0 |
200 ns |
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Renesas Electronics |
|||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
COMMERCIAL |
168 |
DIMM |
4096 |
RECTANGULAR |
PLASTIC/EPOXY |
NO |
CMOS |
NO LEAD |
1270 mA |
4194304 words |
NO |
COMMON |
3.3 |
3.3 |
72 |
MICROELECTRONIC ASSEMBLY |
DIMM168 |
Other Memory ICs |
1.27 mm |
70 Cel |
3-STATE |
4MX72 |
4M |
0 Cel |
DUAL |
R-PDMA-N168 |
Not Qualified |
301989888 bit |
.05 Amp |
70 ns |
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Renesas Electronics |
VIDEO DRAM |
COMMERCIAL |
40 |
SOJ |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
J BEND |
200 mA |
262144 words |
5 |
5 |
8 |
SMALL OUTLINE |
SOJ40,.44 |
Other Memory ICs |
1.27 mm |
70 Cel |
256KX8 |
256K |
0 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-J40 |
Not Qualified |
2097152 bit |
e0 |
.0002 Amp |
80 ns |
|||||||||||||||||||||||||||||||||||||||||||
Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
77 |
FBGA |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
HYBRID |
BALL |
45 mA |
FLASH+SRAM |
2.6/3 |
GRID ARRAY, FINE PITCH |
BGA77,8X14,32 |
Other Memory ICs |
.8 mm |
70 Cel |
-20 Cel |
BOTTOM |
R-PBGA-B77 |
Not Qualified |
.00001 Amp |
80 ns |
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Renesas Electronics |
MEMORY CIRCUIT |
COMMERCIAL |
24 |
SOP |
RECTANGULAR |
PLASTIC/EPOXY |
YES |
CMOS |
GULL WING |
90 mA |
5 |
5 |
SMALL OUTLINE |
SOP24,.5 |
Other Memory ICs |
1.27 mm |
70 Cel |
-20 Cel |
Tin/Lead (Sn/Pb) |
DUAL |
R-PDSO-G24 |
Not Qualified |
e0 |
.09 Amp |
21 ns |
Other function memory ICs are a group of integrated circuits that perform specialized functions in addition to storing data. These ICs are used in a wide range of digital devices, including computers, smartphones, and electronic devices.
One example of an other function memory IC is cache memory. Cache memory is a type of memory that stores frequently accessed data and instructions. Cache memory is used to improve the performance of the system by reducing the time it takes to access data from the main memory.
Another example of an other function memory IC is dynamic random-access memory (DRAM). DRAM is a type of memory that stores data as a charge in a capacitor. DRAM is commonly used as the main memory in computers and other digital devices.
Static random-access memory (SRAM) is another type of other function memory IC. SRAM is a type of memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.
Memory controller ICs are another type of other function memory IC. Memory controller ICs are used to manage the flow of data between the CPU and the memory subsystem. These ICs are commonly used in computer systems and other digital devices to ensure that data is transferred efficiently and reliably.