SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Nominal Negative Supply Voltage	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
SN74ACT2153FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		1024 words		5		11	CHIP CARRIER			1.27 mm	70 Cel	TOTEM POLE	1KX11	1K		0 Cel		QUAD	1	S-PQCC-J28	5.25 V	4.57 mm	11.5062 mm	Not Qualified	11264 bit	4.75 V			NO		11.5062 mm	22 ns
SN74ACT2152-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
SN74ACT2140A-25FN	Texas Instruments	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND	PARALLEL	ASYNCHRONOUS		8192 words	COMMON			18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	8KX18	8K		0 Cel		QUAD		S-PQCC-J52				Not Qualified	147456 bit							25 ns
SN74ACT2154-35FN	Texas Instruments	CACHE TAG SRAM	COMMERCIAL	28	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND			125 mA	2048 words		5	5	8	CHIP CARRIER	LDCC28,.5SQ	SRAMs	1.27 mm	70 Cel		2KX8	2K		0 Cel		QUAD		S-PQCC-J28				Not Qualified	16384 bit
5962-9674502QXC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240	5.25 V	4.3 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4			32 mm
5962-9674502QXX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240	5.25 V	4.3 mm	32 mm	Not Qualified	4194304 bit	4.75 V					32 mm
5962-9674402QYX	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE	UNSPECIFIED	YES	1	CMOS			GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		DUAL		S-XDSO-G240	3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V					32 mm
5962-9674502QYX	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS			GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-G240	5.25 V	4.2 mm	32 mm	Not Qualified	4194304 bit	4.75 V					32 mm
5962-9674402QUC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		FLAT	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240	3.47 V	3.7 mm	32 mm	Not Qualified	4194304 bit	3.13 V		e4			32 mm
5962-9674402QYC	Analog Devices	STANDARD SRAM	MILITARY	240	SSOP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	SMALL OUTLINE, SHRINK PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	DUAL		S-XDSO-G240	3.47 V	4.2 mm	32 mm	Not Qualified	4194304 bit	3.13 V		e4			32 mm
5962-9674502QUC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240	5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4			32 mm
5962-9674502QTX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240	5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V					32 mm
5962-9674402QUX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS			FLAT	PARALLEL	SYNCHRONOUS		131072 words		3.3		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240	3.47 V	3.7 mm	32 mm	Not Qualified	4194304 bit	3.13 V					32 mm
5962-9674502QYC	Analog Devices	STANDARD SRAM	MILITARY	240	FQFP	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		GULL WING	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK, FINE PITCH			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-G240	5.25 V	4.2 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4			32 mm
5962-9674502QTC	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-PRF-38534 Class Q		FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel	GOLD	QUAD		S-XQFP-F240	5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V		e4			32 mm
5962-9674502QUX	Analog Devices	STANDARD SRAM	MILITARY	240	QFF	SQUARE	UNSPECIFIED	YES	1	CMOS			FLAT	PARALLEL	ASYNCHRONOUS		131072 words		5		32	FLATPACK			.5 mm	125 Cel		128KX32	128K		-55 Cel		QUAD		S-XQFP-F240	5.25 V	3.7 mm	32 mm	Not Qualified	4194304 bit	4.75 V					32 mm
MC10H145FNR2	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL		-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	QUAD		S-PQCC-J20		4.57 mm	8.965 mm	Not Qualified	64 bit			e0			8.965 mm	6 ns
MC10H145FN	Onsemi	STANDARD SRAM	COMMERCIAL EXTENDED	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	ECL		-5.2 V	J BEND	PARALLEL	ASYNCHRONOUS		16 words				4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	75 Cel		16X4	16		0 Cel	TIN LEAD	QUAD		S-PQCC-J20		4.57 mm	8.965 mm	Not Qualified	64 bit			e0			8.965 mm	6 ns
5962-8670511XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel		QUAD		S-CQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						25 ns
MK45180Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0	YES	.13 Amp	24.23 mm	20 ns
M62486AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0		.03 Amp	16.5862 mm	11 ns
T74LS670C1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		4 words		5		4	CHIP CARRIER			1.27 mm	70 Cel		4X4	4		0 Cel		QUAD		S-PQCC-J20	5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V					8.9662 mm	45 ns
M62486RQ8	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0		.03 Amp	16.5862 mm	8 ns
M62486AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	14 ns
M74HC670C1	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	4X4	4		-40 Cel	TIN LEAD	QUAD	1	S-PQCC-J20	6 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	2 V		e0	NO		8.9662 mm	49 ns
MK4202Q-22	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.5 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.5 V		e0	YES	.05 Amp	24.23 mm	25 ns
M62940AQ11	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	294912 bit			e0		.03 Amp		11 ns
MK62940AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE		YES		16.5862 mm	14 ns
M62486RQ9	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0		.03 Amp	16.5862 mm	9 ns
MK4202Q20	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0	YES	.05 Amp	24.23 mm	20 ns
MK62940Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0	YES	.03 Amp	16.5862 mm	19 ns
MK45180Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	4096 words		5		10	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		4KX10	4K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	MATCH OUTPUT; ON CHIP PARITY CHECKER/GENERATOR; FLASH CLEAR; LOCAL AND SNOOP PORT COMPARATOR	e0	YES	.13 Amp	24.23 mm	17 ns
M62486AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0		.03 Amp	16.5862 mm	12 ns
MK4202Q17/05	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND			250 mA	2048 words				20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel		2KX20	2K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J68				Not Qualified	40960 bit			e0		.05 Amp		17 ns
M62940AQ14	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44				Not Qualified	294912 bit			e0		.03 Amp		14 ns
M62940AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	12 ns
MK62486Q19	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0	YES	.03 Amp	16.5862 mm	19 ns
M62486AQ14	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE	e0		.03 Amp	16.5862 mm	14 ns
M62486RQ9TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	9 ns
MK4202Q25	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0	YES	.05 Amp	24.23 mm	25 ns
MK4202Q17	STMicroelectronics	CACHE TAG SRAM	COMMERCIAL	68	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS	250 mA	2048 words		5		20	CHIP CARRIER	LDCC68,1.0SQ	SRAMs	1.27 mm	70 Cel	3-STATE	2KX20	2K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J68	5.25 V	5.08 mm	24.23 mm	Not Qualified	40960 bit	4.75 V	OPEN-COLLECTOR MATCH OUTPUT; FLASH CLEAR	e0	YES	.05 Amp	24.23 mm	17 ns
8413208YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883		NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						55 ns
MK62486Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0	YES	.03 Amp	16.5862 mm	24 ns
M62940AQ14TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	14 ns
5962-8670515XX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS			NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel		QUAD		S-CQCC-N20	5.5 V			Not Qualified	16384 bit	4.5 V						70 ns
MK62940AQ11	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE		YES		16.5862 mm	11 ns
M62486AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm	16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	11 ns
T74LS170C1	STMicroelectronics	STANDARD SRAM	COMMERCIAL	20	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS			J BEND	PARALLEL	ASYNCHRONOUS		4 words		5		4	CHIP CARRIER			1.27 mm	70 Cel		4X4	4		0 Cel		QUAD		S-PQCC-J20	5.25 V	4.57 mm	8.9662 mm	Not Qualified	16 bit	4.75 V					8.9662 mm	40 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.