SQUARE SRAM 2,400+

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Part RoHS Manufacturer Memory IC Type Temperature Grade No. of Terminals Package Code Refresh Cycles Package Shape Total Dose (V) Package Body Material Surface Mount No. of Functions Technology Screening Level Nominal Negative Supply Voltage Terminal Form Parallel or Serial Operating Mode Maximum Supply Current No. of Words Self Refresh Input/Output Type Nominal Supply Voltage / Vsup (V) Power Supplies (V) Memory Width Package Style (Meter) Package Equivalence Code Alternate Memory Width Sub-Category Terminal Pitch Maximum Operating Temperature Reverse Pinout Output Characteristics Organization No. of Words Code Minimum Standby Voltage Minimum Operating Temperature Terminal Finish Terminal Position No. of Ports JESD-30 Code Moisture Sensitivity Level (MSL) Maximum Supply Voltage (Vsup) Maximum Seated Height Maximum Clock Frequency (fCLK) Width Qualification Memory Density Minimum Supply Voltage (Vsup) Additional Features JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Output Enable Maximum Standby Current Length Maximum Access Time

DS2065W-100

Maxim Integrated

NON-VOLATILE SRAM MODULE

INDUSTRIAL

256

BGA

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

BALL

PARALLEL

ASYNCHRONOUS

1048576 words

3.3

8

GRID ARRAY

1.27 mm

85 Cel

1MX8

1M

-40 Cel

TIN LEAD

BOTTOM

S-PBGA-B256

3.6 V

8.72 mm

27 mm

Not Qualified

8388608 bit

3 V

e0

27 mm

100 ns

TC55188T-25

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

25 ns

TC55187T-25

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

25 ns

TC55187T-30

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

30 ns

TC55188T-30

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

200 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

30 ns

TC55188T-20

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

230 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

20 ns

TC55187T-20

Toshiba

CACHE SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

230 mA

8192 words

COMMON

5

5

18

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

8KX18

8K

4.5 V

0 Cel

TIN LEAD

QUAD

1

S-PQCC-J52

5.5 V

4.57 mm

19.1262 mm

Not Qualified

147456 bit

4.5 V

CONFIGURABLE AS 2-WAY 4K*18

e0

YES

.04 Amp

19.1262 mm

20 ns

7140SA100JI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

TIN LEAD

QUAD

2

S-PQCC-J52

1

5.5 V

4.57 mm

19.1262 mm

Not Qualified

8192 bit

4.5 V

e0

20

225

.03 Amp

19.1262 mm

100 ns

7133SA55GGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

315 mA

2048 words

5

16

GRID ARRAY

2.54 mm

85 Cel

2KX16

2K

-40 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

29.464 mm

32768 bit

4.5 V

29.464 mm

55 ns

7140SA55FI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QFF

SQUARE

CERAMIC

YES

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

FLATPACK

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

TIN LEAD

QUAD

2

S-XQFP-F48

Not Qualified

8192 bit

e0

.03 Amp

55 ns

7133LA90PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

90 ns

7140LA55TFGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

Not Qualified

8192 bit

4.5 V

e3

30

260

.004 Amp

55 ns

7140SA35TFGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

64

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535 Class Q

GULL WING

PARALLEL

ASYNCHRONOUS

230 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

Not Qualified

8192 bit

4.5 V

e3

30

260

.03 Amp

35 ns

7142LA55L48G8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

2KX8

2K

0 Cel

MATTE TIN

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

16384 bit

4.5 V

e3

14.3002 mm

55 ns

7133SA70JG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

68

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

280 mA

2048 words

5

16

CHIP CARRIER

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQCC-N68

5.5 V

32768 bit

4.5 V

70 ns

7140LA35PFB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

8192 bit

4.5 V

e0

30

240

.004 Amp

14 mm

35 ns

7133SA25GGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

16

GRID ARRAY

2.54 mm

85 Cel

2KX16

2K

-40 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

29.464 mm

32768 bit

4.5 V

29.464 mm

25 ns

7140LA100L48I8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e0

.004 Amp

100 ns

71421SA20PFG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

250 mA

2048 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

16384 bit

4.5 V

e3

30

260

.015 Amp

14 mm

20 ns

7140SA25L48G

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

1KX8

1K

4.5 V

0 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.015 Amp

14.3002 mm

25 ns

7140LA100TFI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

3

Not Qualified

8192 bit

e0

30

240

.004 Amp

100 ns

7140LA100LG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

1KX8

1K

0 Cel

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

8192 bit

4.5 V

14.3002 mm

100 ns

7140LA20PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

LQFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

1024 words

COMMON

5

5

8

FLATPACK, LOW PROFILE

QFP64,.66SQ,32

SRAMs

.8 mm

70 Cel

3-STATE

1KX8

1K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQFP-G64

3

5.5 V

1.6 mm

14 mm

Not Qualified

8192 bit

4.5 V

e3

30

260

.0015 Amp

14 mm

20 ns

7142LA25L48GI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

300 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

16384 bit

4.5 V

e3

14.3002 mm

25 ns

7142LA35L48GB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-PRF-38535 Class Q

NO LEAD

PARALLEL

ASYNCHRONOUS

170 mA

2048 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

2KX8

2K

2 V

-55 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

16384 bit

4.5 V

e3

.004 Amp

14.3002 mm

35 ns

7140LA25L48GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.004 Amp

14.3002 mm

25 ns

7140LA100L48I

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC

YES

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

TIN LEAD

QUAD

2

S-XQCC-N48

Not Qualified

8192 bit

e0

.004 Amp

100 ns

71421LA55PPG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

70 Cel

2KX8

2K

0 Cel

QUAD

S-PQFP-G52

5.5 V

16384 bit

4.5 V

55 ns

7133SA70PFGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

GULL WING

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

FLATPACK

.5 mm

125 Cel

2KX16

2K

-55 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

70 ns

71421SA20PPG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

70 Cel

2KX8

2K

0 Cel

QUAD

S-PQFP-G52

5.5 V

16384 bit

4.5 V

20 ns

7142SA25JGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

85 Cel

2KX8

2K

-40 Cel

MATTE TIN

QUAD

S-PQCC-N52

5.5 V

4.572 mm

19.1262 mm

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

19.1262 mm

25 ns

7140LA100LG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

110 mA

1024 words

5

8

CHIP CARRIER

1.27 mm

70 Cel

1KX8

1K

0 Cel

QUAD

S-XQCC-N48

5.5 V

14.3002 mm

8192 bit

4.5 V

14.3002 mm

100 ns

7142SA25JGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

52

QCCN

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

5

8

CHIP CARRIER

1.27 mm

125 Cel

2KX8

2K

-55 Cel

MATTE TIN

QUAD

S-PQCC-N52

5.5 V

4.572 mm

19.1262 mm

Not Qualified

16384 bit

4.5 V

AUTOMATIC POWER DOWN

e3

19.1262 mm

25 ns

7140SA55FGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

QFL48,.75SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

4.5 V

-40 Cel

MATTE TIN

QUAD

2

S-CQCC-N48

1

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.03 Amp

14.3002 mm

55 ns

7140LA25TF

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

1KX8

1K

2 V

0 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

3

Not Qualified

8192 bit

e0

30

240

.0015 Amp

25 ns

7133SA25PFG

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

100

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

265 mA

2048 words

5

16

FLATPACK

.5 mm

70 Cel

2KX16

2K

0 Cel

QUAD

S-PQFP-G100

5.5 V

14 mm

32768 bit

4.5 V

14 mm

25 ns

7140LA35L48B

Renesas Electronics

DUAL-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

ASYNCHRONOUS

170 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1.016 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

Tin/Lead (Sn/Pb)

QUAD

2

S-CQCC-N48

1

5.5 V

3.048 mm

14.3002 mm

Not Qualified

8192 bit

4.5 V

e0

NOT SPECIFIED

240

.004 Amp

14.3002 mm

35 ns

7133SA25GI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

PIN/PEG

PARALLEL

ASYNCHRONOUS

330 mA

2048 words

COMMON

5

5

16

GRID ARRAY

PGA68,11X11

SRAMs

2.54 mm

85 Cel

3-STATE

2KX16

2K

2 V

-40 Cel

TIN LEAD

PERPENDICULAR

2

S-CPGA-P68

5.5 V

3.683 mm

29.464 mm

Not Qualified

32768 bit

4.5 V

e0

.004 Amp

29.464 mm

25 ns

7133SA90GGB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

PGA

SQUARE

CERAMIC, METAL-SEALED COFIRED

NO

1

CMOS

MIL-PRF-38535

PIN/PEG

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

5

16

GRID ARRAY

125 Cel

2KX16

2K

-55 Cel

PERPENDICULAR

S-CPGA-P68

5.5 V

32768 bit

4.5 V

90 ns

7142SA35L48

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

NO LEAD

PARALLEL

ASYNCHRONOUS

165 mA

2048 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

70 Cel

3-STATE

2KX8

2K

4.5 V

0 Cel

TIN LEAD

QUAD

2

S-CQCC-N48

5.5 V

14.3002 mm

Not Qualified

16384 bit

4.5 V

e0

.015 Amp

14.3002 mm

35 ns

7140LA100L48GB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

UNSPECIFIED

YES

1

CMOS

MIL-PRF-38535

NO LEAD

PARALLEL

ASYNCHRONOUS

140 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LCC48,.56SQ,40

SRAMs

1 mm

125 Cel

3-STATE

1KX8

1K

2 V

-55 Cel

MATTE TIN

QUAD

2

S-XQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.004 Amp

14.3002 mm

100 ns

71421LA20TF8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

64

QFP

SQUARE

PLASTIC/EPOXY

YES

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

200 mA

2048 words

COMMON

5

5

8

FLATPACK

QFP64,.47SQ,20

SRAMs

.5 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

TIN LEAD

QUAD

2

S-PQFP-G64

Not Qualified

16384 bit

e0

.0015 Amp

20 ns

7140LA25JGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

220 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

85 Cel

3-STATE

1KX8

1K

2 V

-40 Cel

MATTE TIN

QUAD

2

S-PQCC-J52

1

5.5 V

4.57 mm

19.1262 mm

Not Qualified

8192 bit

4.5 V

e3

30

260

.004 Amp

19.1262 mm

25 ns

7140SA55FGB8

Renesas Electronics

MULTI-PORT SRAM

MILITARY

48

QCCN

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535 Class Q

NO LEAD

PARALLEL

ASYNCHRONOUS

190 mA

1024 words

COMMON

5

5

8

CHIP CARRIER

QFL48,.75SQ

SRAMs

1.27 mm

125 Cel

3-STATE

1KX8

1K

4.5 V

-55 Cel

MATTE TIN

QUAD

2

S-CQCC-N48

5.5 V

14.3002 mm

Not Qualified

8192 bit

4.5 V

e3

.03 Amp

14.3002 mm

55 ns

71421LA35JG8

Renesas Electronics

MULTI-PORT SRAM

COMMERCIAL

52

QCCJ

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

J BEND

PARALLEL

ASYNCHRONOUS

120 mA

2048 words

COMMON

5

5

8

CHIP CARRIER

LDCC52,.8SQ

SRAMs

1.27 mm

70 Cel

3-STATE

2KX8

2K

2 V

0 Cel

Matte Tin (Sn) - annealed

QUAD

2

S-PQCC-J52

1

5.5 V

Not Qualified

16384 bit

4.5 V

e3

30

260

.0015 Amp

35 ns

71421LA55PPGI

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

52

QFP

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

GULL WING

PARALLEL

ASYNCHRONOUS

2048 words

5

8

FLATPACK

85 Cel

2KX8

2K

-40 Cel

QUAD

S-PQFP-G52

5.5 V

16384 bit

4.5 V

55 ns

7133LA55FGI8

Renesas Electronics

MULTI-PORT SRAM

INDUSTRIAL

68

QFF

SQUARE

PLASTIC/EPOXY

YES

1

CMOS

FLAT

PARALLEL

ASYNCHRONOUS

285 mA

2048 words

5

16

FLATPACK

1.27 mm

85 Cel

2KX16

2K

-40 Cel

QUAD

S-PQFP-F68

5.5 V

24.0792 mm

32768 bit

4.5 V

24.0792 mm

55 ns

7133SA90FB

Renesas Electronics

MULTI-PORT SRAM

MILITARY

68

QFF

SQUARE

CERAMIC, METAL-SEALED COFIRED

YES

1

CMOS

MIL-PRF-38535

FLAT

PARALLEL

ASYNCHRONOUS

310 mA

2048 words

COMMON

5

5

16

FLATPACK

QFL68,.95SQ

SRAMs

1.27 mm

125 Cel

3-STATE

2KX16

2K

2 V

-55 Cel

TIN LEAD

QUAD

2

S-CQFP-F68

5.5 V

3.683 mm

24.0792 mm

Not Qualified

32768 bit

4.5 V

e0

.004 Amp

24.0792 mm

90 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.