SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
MCM69D536TQ5R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176		3.465 V	1.6 mm	100 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0				.1 Amp	24 mm	5 ns
MCM63D736ATQ100	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176		3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V							24 mm	5 ns
MCM67A618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	10 ns
MCM63D736ATQ133	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176		3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V							24 mm	4 ns
MCM67M618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	64KX18	64K		0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES		19.1262 mm	10 ns
MPC2605ZP83R	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241		3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE						25 mm	8 ns
MPC2605ZP66R	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241		3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE						25 mm	8.5 ns
MCM67B618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52		5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0			YES	.095 Amp	19.1262 mm	12 ns
MCM69R818CZP4.4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119		3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V							22 mm	2.2 ns
CYD09S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	790 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.2 Amp	23 mm	9 ns
CYD18S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	9 ns
CYD18S18V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	750 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	19 mm	11 ns
CYD18S18V18-167BBAXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	690 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	30	260		.3 Amp	17 mm	4 ns
CYD18S36V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	860 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	19 mm	9 ns
CYD18S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	19 mm	11 ns
CYD18S72V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1					23 mm	4 ns
CYD18S36V18-200BBAXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	800 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	17 mm	3.3 ns
CYD18S72V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	70 Cel		256KX72	256K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1					23 mm	3.3 ns
CYD36S18V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1160 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	2MX18	2M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns
CYD18S72V-133BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	580 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	133 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260		.075 Amp	23 mm	5 ns
CYD18S36V18-167BBAXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	512KX36	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	17 mm	4 ns
CYD36S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	85 Cel		1MX36	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	4 ns
CYD18S36V18-167BBAXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	720 mA	524288 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	512KX36	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	17 mm	4 ns
CYD18S72V-100BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	256KX72	256K	3.14 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260		.075 Amp	23 mm	5.2 ns
CYD18S18V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	830 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	1MX18	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	19 mm	9 ns
CYD18S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1					23 mm	3.3 ns
CYDMX128B16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	8KX16	8K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		131072 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX256A16-90BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	16384 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	90 ns
CYDMX256A16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	16384 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX128A16-65BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	8192 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	8KX16	8K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		131072 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	65 ns
CYDMX064A16-90BVXI	Infineon Technologies	MULTI-PORT SRAM		100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	25 mA	4096 words	COMMON	1.8		16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20		.5 mm	85 Cel	3-STATE	4KX16	4K	1.7 V	-40 Cel		BOTTOM	2	S-PBGA-B100		1.9 V	1 mm		6 mm		65536 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT				YES	.000006 Amp	6 mm	90 ns
CYD36S72V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1430 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	512KX72	512K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns
CYD18S72V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	450 mA	262144 words	COMMON	3.3	3.3	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	3.14 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	3.465 V	1.9 mm	100 MHz	23 mm	Not Qualified	18874368 bit	3.135 V	PIPELINED ARCHITECTURE OR FLOW-THROUGH ARCHITECTURE	e1	20	260		.075 Amp	23 mm	5.2 ns
CYDMX256B16-65BVXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	100	VFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	40 mA	16384 words	COMMON	1.8	1.8/3	16	GRID ARRAY, VERY THIN PROFILE, FINE PITCH	BGA100,10X10,20	SRAMs	.5 mm	85 Cel	3-STATE	16KX16	16K	1.7 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B100	3	1.9 V	1 mm		6 mm	Not Qualified	262144 bit	1.7 V	IT CAN OPERATE ALSO 2.5 AND 3.3 VOLT	e1	30	260	YES	.000006 Amp	6 mm	65 ns
CYD18S18V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	690 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	11 ns
CYD02S36V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	780 mA	65536 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	167 MHz	17 mm	Not Qualified	2359296 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	17 mm	4 ns
GVT7164B19C-10	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	10 ns
CYD09S72V18-167BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	700 mA	131072 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	128KX72	128K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	167 MHz	23 mm	Not Qualified	9437184 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1				.2 Amp	23 mm	11 ns
GVT7164B19C-8	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	8 ns
CYD36S36V18-167BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	4 ns
GVT7164B19C-9	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52		5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V							19.125 mm	9 ns
CYD18S72V18-200BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	980 mA	262144 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	256KX72	256K	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.16 mm	200 MHz	23 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	23 mm	9 ns
CYD02S36V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	860 mA	65536 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	85 Cel	3-STATE	64KX36	64K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	17 mm	Not Qualified	2359296 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.35 Amp	17 mm	3.3 ns
CYD18S18V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	256	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	770 mA	1048576 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY, LOW PROFILE	BGA256,16X16,40	SRAMs	1 mm	70 Cel	3-STATE	1MX18	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B256	3	1.58 V	1.7 mm	200 MHz	19 mm	Not Qualified	18874368 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.3 Amp	19 mm	9 ns
CYD36S18V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1280 mA	2097152 words	COMMON	1.5	1.5/1.8	18	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	2MX18	2M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
CYD36S36V18-133BGXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	1220 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	70 Cel	3-STATE	1MX36	1M	1.4 V	0 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.59 Amp	27 mm	13 ns
CYD09S72V18-200BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1	40	260			23 mm	3.3 ns
CYD18S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		262144 words		1.5		72	GRID ARRAY			1 mm	85 Cel		256KX72	256K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	18874368 bit	1.42 V		e1	40	260			23 mm	4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.