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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Output Enable	Maximum Standby Current	Length	Maximum Access Time
CYD09S72V18-167BBXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		1.5		72	GRID ARRAY			1 mm	85 Cel		128KX72	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	9437184 bit	1.42 V		e1					23 mm	4 ns
CYD36S72V18-167BGI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1730 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	167 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e0				.7 Amp	27 mm	4 ns
CYD36S72V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1550 mA	524288 words	COMMON	1.5	1.5/1.8	72	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	512KX72	512K	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
SAE81C80A	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		186 ns
SAE81C80B	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	110 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
SAE81C80	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	85 Cel	3-STATE	504X8	504		-40 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
SAB81C80	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	ASYNCHRONOUS	20 mA	504 words	COMMON	5	5	8	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	504X8	504		0 Cel	Tin/Lead (Sn/Pb)	QUAD	2, (MUXED)	S-PQCC-J44						Not Qualified				e0				.000001 Amp		166 ns
CYD36S36V18-200BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		1048576 words		1.5		36	GRID ARRAY			1 mm	70 Cel		1MX36	1M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B484	3	1.58 V	2.16 mm		23 mm	Not Qualified	37748736 bit	1.42 V		e1					23 mm	3.3 ns
CYD36S36V18-133BGXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	484	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS	1330 mA	1048576 words	COMMON	1.5	1.5/1.8	36	GRID ARRAY	BGA484,22X22,40	SRAMs	1 mm	85 Cel	3-STATE	1MX36	1M	1.4 V	-40 Cel	TIN SILVER COPPER	BOTTOM	2	S-PBGA-B484	3	1.58 V	2.46 mm	133 MHz	27 mm	Not Qualified	37748736 bit	1.42 V	PIPELINED OR FLOW-THROUGH ARCHITECTURE, IT CAN ALSO OPERATES AT 1.8V	e1	20	260		.7 Amp	27 mm	13 ns
CY7C0430V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	1310720 bit							.01 Amp		4 ns
CY7C4021KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C0450V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	1310720 bit							.00001 Amp		4 ns
CY7C0452V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	5242880 bit							.01 Amp		3.5 ns
CY7C4022KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C038V-20AXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	175 mA	65536 words	COMMON	3.3	3.3	18	FLATPACK, LOW PROFILE, FINE PITCH	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	64KX18	64K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	1179648 bit	3 V		e3	40	260		.00005 Amp	14 mm	20 ns
CY7C0450V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	1310720 bit							.00001 Amp		3.5 ns
CY7C4121KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4022KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX18	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C1021CV33-12BAXE	Infineon Technologies	STANDARD SRAM	AUTOMOTIVE	48	TFBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	AEC-Q100	BALL	PARALLEL	ASYNCHRONOUS	90 mA	65536 words	COMMON	3.3	3.3	16	GRID ARRAY, THIN PROFILE, FINE PITCH	BGA48,6X8,30	SRAMs	.75 mm	125 Cel	3-STATE	64KX16	64K	3 V	-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B48	3	3.63 V	1.2 mm		7 mm	Not Qualified	1048576 bit	2.97 V		e1	20	260		.01 Amp	7 mm	12 ns
CY7C4141KV13-667FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4141KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel		BOTTOM		S-PBGA-B361		1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V			NOT SPECIFIED	NOT SPECIFIED			21 mm
CY7C0431V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	2621440 bit							.01 Amp		4.5 ns
CY7C0451V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	2621440 bit							.01 Amp		3.5 ns
CY7C4122KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		8MX18	8M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C4122KV13-933FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		8388608 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		8MX18	8M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C0430V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	1310720 bit							.01 Amp		3.5 ns
CY7C1032-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	Tin/Lead (Sn/Pb)	QUAD		S-XQCC-J52						Not Qualified	1179648 bit			e0				.015 Amp		14 ns
CY7C0251E-25AXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	250 mA	8192 words	COMMON	5	5	18	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	8KX18	8K	2 V	0 Cel	NICKEL PALLADIUM GOLD	QUAD	2	S-PQFP-G100	3					Not Qualified	147456 bit			e4		260		.0015 Amp		25 ns
CY7C0451V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	64KX40	64K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	2621440 bit							.01 Amp		3.5 ns
CY7C146-15JXCT	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	ASYNCHRONOUS		2048 words		5		8	CHIP CARRIER			1.27 mm	70 Cel		2KX8	2K		0 Cel	MATTE TIN	QUAD		S-PQCC-J52	3	5.5 V	5.08 mm		19.1262 mm	Not Qualified	16384 bit	4.5 V	AUTOMATIC POWER-DOWN; INTERRUPT FLAG	e3	30	260			19.1262 mm	15 ns
CY7C0430V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	65536 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX20	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	1310720 bit							.01 Amp		4.5 ns
CY7C0450V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	32768 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	32KX40	32K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	1310720 bit							.00001 Amp		4.5 ns
CY7C0451V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	2621440 bit							.01 Amp		4 ns
CY7C008V-15AXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	100	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS		65536 words		3.3		8	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel	3-STATE	64KX8	64K	2 V	0 Cel	MATTE TIN	QUAD	2	S-PQFP-G100	3	3.6 V	1.6 mm		14 mm	Not Qualified	524288 bit	3 V	INTERRUPT FLAG	e3	30	260	YES		14 mm	15 ns
CY7C1031-14YMB	Infineon Technologies	STANDARD SRAM	MILITARY	52	QCCJ	SQUARE	CERAMIC	YES		CMOS	38535Q/M;38534H;883B	J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	125 Cel	3-STATE	64KX18	64K	4.5 V	-55 Cel	TIN LEAD	QUAD		S-XQCC-J52						Not Qualified	1179648 bit			e0				.015 Amp		14 ns
CY7C0831AV-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	144	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	GRID ARRAY, LOW PROFILE			1 mm	85 Cel		128KX18	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B144		3.465 V	1.6 mm		13 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE	e0					13 mm	4 ns
CY7C0451V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	64KX40	64K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	2621440 bit							.01 Amp		4.5 ns
CY7C0831AV-167AI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	120	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		18	FLATPACK, LOW PROFILE, FINE PITCH			.4 mm	85 Cel		128KX18	128K		-40 Cel	TIN LEAD	QUAD		S-PQFP-G120	3	3.465 V	1.6 mm		14 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE	e0					14 mm	4 ns
CY7C1032-14JC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.5 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J52						Not Qualified	1179648 bit			e0				.01 Amp		14 ns
CY7C0452V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	5242880 bit							.01 Amp		3.5 ns
CY7C09579V-100BBXC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	172	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	GRID ARRAY, LOW PROFILE			1 mm	70 Cel		32KX36	32K		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B172	3	3.465 V	1.25 mm		15 mm		1179648 bit	3.135 V	FLOW-THROUGH OR PIPELINED ARCHITECTURE	e1	40	260			15 mm	12.5 ns
CY7C4142KV13-933FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX36	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1					21 mm
CY7C0452V18-100BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	900 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				100 MHz		Not Qualified	5242880 bit							.01 Amp		4.5 ns
CY7C4021KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C136E-25NXCT	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	52	QFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	ASYNCHRONOUS	275 mA	2048 words	COMMON	5		8	FLATPACK	QFP52,.52SQ		.65 mm	70 Cel	3-STATE	2KX8	2K	4.5 V	0 Cel		QUAD	2	S-PQFP-G52		5.5 V	2.5 mm		10 mm		16384 bit	4.5 V						.015 Amp	10 mm	25 ns
CY7C4042KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1					21 mm
CY7C0452V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX40	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	5242880 bit							.01 Amp		4 ns
CY7C0452V18-133BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS		BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX40	128K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	5242880 bit							.01 Amp		4 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.