SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Moisture Sensitivity Level (MSL)	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Maximum Time At Peak Reflow Temperature (s)	Peak Reflow Temperature (C)	Maximum Standby Current	Length	Maximum Access Time
CY7C0851AV-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	172	LBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS	300 mA	65536 words	COMMON	3.3	3.3	36	GRID ARRAY, LOW PROFILE	BGA172,14X14,40	SRAMs	1 mm	70 Cel	3-STATE	64KX36	64K	3.14 V	0 Cel	TIN LEAD	BOTTOM	2	S-PBGA-B172	3	3.465 V	1.25 mm	167 MHz	15 mm	Not Qualified	2359296 bit	3.135 V	PIPELINED ARCHITECTURE	e0			.075 Amp	15 mm	4 ns
CY7C4022KV13-106FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		18	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		4MX18	4M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1				21 mm
CY7C4041KV13-600FCXC	Infineon Technologies	QDR SRAM	COMMERCIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	70 Cel		2MX36	2M		0 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		75497472 bit	1.26 V		e1				21 mm
CY7C0241E-55AXI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	100	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	290 mA	4096 words	COMMON	5	5	18	FLATPACK	QFP100,.63SQ,20	SRAMs	.5 mm	85 Cel	3-STATE	4KX18	4K	2 V	-40 Cel		QUAD	2	S-PQFP-G100						Not Qualified	73728 bit						.0015 Amp		55 ns
CY7C0431V18-167BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	2621440 bit						.01 Amp		3.5 ns
CY7C1031-14JC	Infineon Technologies	STANDARD SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS	J BEND	PARALLEL	SYNCHRONOUS	235 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.5 V	0 Cel	TIN LEAD	QUAD		S-PQCC-J52						Not Qualified	1179648 bit			e0			.01 Amp		14 ns
CY7C4141KV13-633FCXI	Infineon Technologies	QDR SRAM	INDUSTRIAL	361	HBGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		4194304 words		1.3		36	GRID ARRAY, HEAT SINK/SLUG			1 mm	85 Cel		4MX36	4M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B361	3	1.34 V	2.765 mm		21 mm		150994944 bit	1.26 V		e1				21 mm
CY7C0431V18-167BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1300 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	128KX20	128K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				167 MHz		Not Qualified	2621440 bit						.01 Amp		3.5 ns
CY7C0451V18-133BBI	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	65536 words	COMMON	1.8	1.8	40	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	85 Cel	3-STATE	64KX40	64K	1.71 V	-40 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	2621440 bit						.01 Amp		4 ns
CY7C0431V18-133BBC	Infineon Technologies	MULTI-PORT SRAM	COMMERCIAL	676	BGA	SQUARE	PLASTIC/EPOXY	YES		CMOS	BALL	PARALLEL	SYNCHRONOUS	1100 mA	131072 words	COMMON	1.8	1.8	20	GRID ARRAY	BGA676,26X26,40	SRAMs	1 mm	70 Cel	3-STATE	128KX20	128K	1.71 V	0 Cel		BOTTOM	4	S-PBGA-B676				133 MHz		Not Qualified	2621440 bit						.01 Amp		4 ns
CY7C016A-15IC	Infineon Technologies	MULTI-PORT SRAM	INDUSTRIAL	80	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS	GULL WING	PARALLEL	ASYNCHRONOUS	305 mA	16384 words	COMMON	5	5	9	FLATPACK	QFP80,.64SQ	SRAMs	.635 mm	85 Cel	3-STATE	16KX9	16K	4.5 V	-40 Cel		QUAD	2	S-PQFP-G80						Not Qualified	147456 bit						.0005 Amp		15 ns
DS2050W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	524288 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS3065W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2030W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2030L-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V		e1			.001 Amp	27 mm	100 ns
DS3065W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		1MX8	1M		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e0				27 mm	70 ns
DS3050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns
DS2065W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	1048576 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		1MX8	1M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	8388608 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS2030Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e0				27 mm	100 ns
DS2045Y-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	100 ns
DS2045W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS2030W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	32768 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V			NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS2045AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e0				27 mm	100 ns
DS3045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0	NOT SPECIFIED	NOT SPECIFIED	.005 Amp	27 mm	100 ns
DS3030W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V		e0				27 mm	100 ns
DS2045L-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	131072 words		3.3	3.3	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e1			.001 Amp	27 mm	100 ns
DS2030AB-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	100 ns
DS2045AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e1			.005 Amp	27 mm	70 ns
DS2045Y-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e1			.005 Amp	27 mm	70 ns
DS2030Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e0				27 mm	70 ns
DS2030L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	262144 bit	3 V		e0				27 mm	100 ns
DS3070W-100#	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	SYNCHRONOUS		2097152 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	16777216 bit	3 V		e1				27 mm	100 ns
DS2030Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e1			.005 Amp	27 mm	100 ns
DS2045Y-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0			.005 Amp	27 mm	100 ns
DS3832C-311	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	168	BGA	SQUARE	UNSPECIFIED	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		1048576 words		3.3		32	GRID ARRAY			1.27 mm	85 Cel		1MX32	1M		-40 Cel	TIN LEAD	BOTTOM		S-XBGA-B168		3.6 V	6.86 mm		43.815 mm	Not Qualified	33554432 bit	3 V		e0				43.815 mm	100 ns
DS2030Y-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.5 V		e1			.005 Amp	27 mm	70 ns
DS2030AB-70#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	70 ns
DS2070W-100#	Maxim Integrated	NON-VOLATILE SRAM	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	50 mA	2097152 words		3.3	3.3	8	GRID ARRAY	BGA256,26X26,50	SRAMs	1.27 mm	85 Cel		2MX8	2M		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V			27 mm	Not Qualified	16777216 bit	3 V		e1			.005 Amp	27 mm	100 ns
DS3050W-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e1				27 mm	100 ns
DS2045W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	131072 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS2045L-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V		e0				27 mm	100 ns
DS2030AB-100#	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS	85 mA	32768 words		5	5	8	GRID ARRAY	BGA256,20X20,50	SRAMs	1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN SILVER COPPER	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e1			.005 Amp	27 mm	100 ns
DS2045W-100+	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel		BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	1048576 bit	3 V			NOT SPECIFIED	NOT SPECIFIED		27 mm	100 ns
DS2045Y-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		131072 words		5		8	GRID ARRAY			1.27 mm	85 Cel		128KX8	128K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.5 V	8.72 mm		27 mm	Not Qualified	1048576 bit	4.5 V		e0				27 mm	70 ns
DS2030AB-70	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		32768 words		5		8	GRID ARRAY			1.27 mm	85 Cel		32KX8	32K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		5.25 V	8.72 mm		27 mm	Not Qualified	262144 bit	4.75 V		e0				27 mm	70 ns
DS2050W-100	Maxim Integrated	NON-VOLATILE SRAM MODULE	INDUSTRIAL	256	BGA	SQUARE	PLASTIC/EPOXY	YES	1	CMOS	BALL	PARALLEL	ASYNCHRONOUS		524288 words		3.3		8	GRID ARRAY			1.27 mm	85 Cel		512KX8	512K		-40 Cel	TIN LEAD	BOTTOM		S-PBGA-B256		3.6 V	8.72 mm		27 mm	Not Qualified	4194304 bit	3 V		e0				27 mm	100 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.