SQUARE SRAM 2,400+

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Part	Manufacturer	Memory IC Type	Temperature Grade	No. of Terminals	Package Code	Package Shape	Package Body Material	Surface Mount	No. of Functions	Technology	Screening Level	Terminal Form	Parallel or Serial	Operating Mode	Maximum Supply Current	No. of Words	Input/Output Type	Nominal Supply Voltage / Vsup (V)	Power Supplies (V)	Memory Width	Package Style (Meter)	Package Equivalence Code	Sub-Category	Terminal Pitch	Maximum Operating Temperature	Output Characteristics	Organization	No. of Words Code	Minimum Standby Voltage	Minimum Operating Temperature	Terminal Finish	Terminal Position	No. of Ports	JESD-30 Code	Maximum Supply Voltage (Vsup)	Maximum Seated Height	Maximum Clock Frequency (fCLK)	Width	Qualification	Memory Density	Minimum Supply Voltage (Vsup)	Additional Features	JESD-609 Code	Output Enable	Maximum Standby Current	Length	Maximum Access Time
M62940AQ12	STMicroelectronics	STANDARD SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES		CMOS		J BEND	PARALLEL	SYNCHRONOUS	180 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQCC-J44					Not Qualified	294912 bit			e0		.03 Amp		12 ns
8413205YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V				Not Qualified	16384 bit	4.5 V						35 ns
MK62940AQ12	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel		QUAD	1	S-PQCC-J44	5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE		YES		16.5862 mm	12 ns
M62940AQ11TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	11 ns
M74HC670C1R	STMicroelectronics	STANDARD SRAM	INDUSTRIAL	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4 words		5	2/6	4	CHIP CARRIER	LDCC20,.4SQ	Other Memory ICs	1.27 mm	85 Cel	3-STATE	4X4	4		-40 Cel	MATTE TIN	QUAD	1	S-CQCC-N20	6 V	1.86 mm		8.89 mm	Not Qualified	16 bit	2 V		e3	NO		8.89 mm	46 ns
M62486AQ12TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	12 ns
8413202YX	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	UNSPECIFIED	YES	1	CMOS	MIL-STD-883	NO LEAD	PARALLEL	ASYNCHRONOUS		16384 words		5		1	CHIP CARRIER				125 Cel		16KX1	16K		-55 Cel		QUAD		S-XQCC-N20	5.5 V				Not Qualified	16384 bit	4.5 V						45 ns
5962-8670515XA	STMicroelectronics	STANDARD SRAM	MILITARY	20	QCCN	SQUARE	CERAMIC, METAL-SEALED COFIRED	YES	1	CMOS		NO LEAD	PARALLEL	ASYNCHRONOUS		4096 words		5		4	CHIP CARRIER				125 Cel		4KX4	4K		-55 Cel	TIN LEAD	QUAD		S-CQCC-N20	5.5 V				Not Qualified	16384 bit	4.5 V		e0				70 ns
M62486RQ8TR	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS		32768 words		5		9	CHIP CARRIER			1.27 mm	70 Cel		32KX9	32K		0 Cel		QUAD		S-PQCC-J44	5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	SELF-TIMED WRITE CYCLE				16.5862 mm	8 ns
MK62940Q24	STMicroelectronics	CACHE SRAM	COMMERCIAL	44	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		J BEND	PARALLEL	SYNCHRONOUS	160 mA	32768 words	COMMON	5	5	9	CHIP CARRIER	LDCC44,.7SQ	SRAMs	1.27 mm	70 Cel	3-STATE	32KX9	32K		0 Cel	TIN LEAD	QUAD	1	S-PQCC-J44	5.25 V	4.7 mm		16.5862 mm	Not Qualified	294912 bit	4.75 V	BURST COUNTER; SELF TIMED WRITE CYCLE	e0	YES	.03 Amp	16.5862 mm	24 ns
5962-86052013A	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	SERIAL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28	5.25 V				Not Qualified	2048 bit	4.75 V
5962-86052013X	NXP Semiconductors	STANDARD SRAM	MILITARY	28	QCCN	SQUARE	UNSPECIFIED	YES	1	BIPOLAR	MIL-STD-883	NO LEAD	PARALLEL	SYNCHRONOUS		256 words		5		8	CHIP CARRIER				125 Cel		256X8	256		-55 Cel		QUAD		S-XQCC-N28	5.25 V				Not Qualified	2048 bit	4.75 V
MCM67B618AFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0	YES	.095 Amp	19.1262 mm	10 ns
MCM69D536TQ5	NXP Semiconductors	CACHE SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel		QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		1179648 bit	3.135 V					24 mm	5 ns
MCM63D736TQ133	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	4 ns
MCM67A618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS	280 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0	YES	.02 Amp	19.1262 mm	12 ns
MCM67A618AFN15	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS	265 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	TIN LEAD	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	BYTE WRITE	e0	YES	.02 Amp	19.1262 mm	15 ns
MCM69R736CZP5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM69R736CZP4.4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.2 ns
MCM69R818CZP6R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM69R818CZP5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM63D736TQ83	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	6 ns
MCM69R818CZP4.4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.2 ns
MCM63D736ATQ83	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	6 ns
MCM69R736CZP6	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM69R736CZP4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM69R736CZP4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM69D536TQ8R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	66 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.1 Amp	24 mm	8 ns
MCM63D736TQ100	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		128KX36	128K		0 Cel		QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm		4718592 bit	3.135 V					24 mm	5 ns
MPC2605ZP66	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241	3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE				25 mm	8.5 ns
MCM63V736TQ5	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	QFP	SQUARE	PLASTIC/EPOXY	YES		CMOS		GULL WING	PARALLEL	SYNCHRONOUS	350 mA	131072 words	COMMON	3.3	3.3	36	FLATPACK	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	128KX36	128K	3.14 V	0 Cel		QUAD	2	S-PQFP-G176					Not Qualified	4718592 bit					.1 Amp		5 ns
MCM67M618AFN12	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS	250 mA	65536 words	COMMON	5	5	18	CHIP CARRIER	LDCC52,.8SQ	SRAMs	1.27 mm	70 Cel	3-STATE	64KX18	64K	4.75 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	1	S-PQCC-J52	5.25 V	4.57 mm		19.1262 mm	Not Qualified	1179648 bit	4.75 V	SELF-TIMED WRITE; BURST COUNTER; BYTE WRITE	e0	YES	.095 Amp	19.1262 mm	12 ns
MCM67M618AFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V					19.125 mm	9 ns
MCM69R736CZP6R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM69D536TQ6R	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	83 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.1 Amp	24 mm	6 ns
MCM69R818CZP5R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM69R818CZP4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM69R818CZP4	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2 ns
MCM67M618BFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	5.25 V			19.125 mm		1179648 bit	4.75 V					19.125 mm	9 ns
MCM67A618BFN10	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	ASYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	5.25 V			19.1262 mm		1179648 bit	4.75 V					19.1262 mm	10 ns
MCM69D536TQ8	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS		32768 words		3.3		36	FLATPACK, LOW PROFILE, FINE PITCH			.5 mm	70 Cel		32KX36	32K		0 Cel	Tin/Lead (Sn/Pb)	QUAD		S-PQFP-G176	3.465 V	1.6 mm		24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0			24 mm	8 ns
MCM67B618BFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	5.25 V			19.1262 mm		1179648 bit	4.75 V					19.1262 mm	9 ns
MCM69R818CZP6	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		262144 words		3.3		18	GRID ARRAY			1.27 mm	70 Cel		256KX18	256K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	3 ns
MCM69R736CZP5	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.5 ns
MCM69R736CZP4.4R	NXP Semiconductors	LATE-WRITE SRAM	COMMERCIAL	119	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		131072 words		3.3		36	GRID ARRAY			1.27 mm	70 Cel		128KX36	128K		0 Cel		BOTTOM		S-PBGA-B119	3.465 V	2.4 mm		14 mm		4718592 bit	3.135 V					22 mm	2.2 ns
MCM67B618AFN9	NXP Semiconductors	CACHE SRAM	COMMERCIAL	52	QCCJ	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		J BEND	PARALLEL	SYNCHRONOUS		65536 words		5		18	CHIP CARRIER			1.27 mm	70 Cel		64KX18	64K		0 Cel		QUAD		S-PQCC-J52	5.25 V	4.57 mm		19.125 mm		1179648 bit	4.75 V					19.125 mm	9 ns
MCM69D536TQ6	NXP Semiconductors	MULTI-PORT SRAM	COMMERCIAL	176	LFQFP	SQUARE	PLASTIC/EPOXY	YES	1	CMOS		GULL WING	PARALLEL	SYNCHRONOUS	250 mA	32768 words	COMMON	3.3	3.3	36	FLATPACK, LOW PROFILE, FINE PITCH	QFP176,1.0SQ,20	SRAMs	.5 mm	70 Cel	3-STATE	32KX36	32K	3.14 V	0 Cel	Tin/Lead (Sn/Pb)	QUAD	2	S-PQFP-G176	3.465 V	1.6 mm	83 MHz	24 mm	Not Qualified	1179648 bit	3.135 V	PIPELINED ARCHITECTURE	e0		.1 Amp	24 mm	6 ns
MPC2605ZP83	NXP Semiconductors	CACHE TAG SRAM	COMMERCIAL	241	BGA	SQUARE	PLASTIC/EPOXY	YES	1	BICMOS		BALL	PARALLEL	SYNCHRONOUS		32768 words		3.3		72	GRID ARRAY			1.27 mm	70 Cel		32KX72	32K		0 Cel		BOTTOM		S-PBGA-B241	3.465 V	2.05 mm		25 mm		2359296 bit	3.135 V	8KX18TAG ARRAY AVAILABLE				25 mm	8 ns

SRAM

SRAM, or Static Random-Access Memory, is a type of volatile computer memory that stores data as a flip-flop, which retains the data as long as power is supplied to the system. SRAM is commonly used as cache memory and in other applications where high-speed access to data is required.

SRAM is a type of memory that is faster and more expensive than DRAM (Dynamic Random-Access Memory). It is commonly used as cache memory in computer systems and other digital devices to improve the speed of data access. SRAM is also used in applications where high-speed data processing is required, such as in networking equipment, video games, and other high-performance computing applications.

One of the advantages of using SRAM is that it provides faster access to data than other types of memory, such as DRAM. This is because SRAM does not need to be refreshed like DRAM, which makes it faster and more reliable. Additionally, SRAM uses less power than other types of memory, which makes it ideal for use in battery-powered devices.

One of the disadvantages of using SRAM is that it is more expensive and less dense than other types of memory, such as DRAM or flash memory. This means that it is not suitable for applications that require large amounts of memory at a low cost. Additionally, SRAM is volatile, which means that it cannot store data permanently.