Phototransistors

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Additional Features	Nominal Light Current	JESD-609 Code	Maximum On State Current
TPS611(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	5 mm	100 nA	1	YES	900		Photo Transistors	75 Cel	ROUND	-20 Cel	30 V	.15 W	HIGH SENSITIVITY	.12 mA		.05 A
TPS625(B)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	2.5 mA
TPS622(B)	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.055 mA
TPS615-A	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	800			85 Cel	ROUND	-30 Cel	30 V			.02 mA
TPS617-A	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.4 mA
TPS606-D	Toshiba	PHOTO TRANSISTOR			SINGLE	1.65 mm	100 nA	1	NO	720			85 Cel	ROUND	-25 Cel	20 V		DOUBLE END	.04 mA
TPS607A-C	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	NO	720			75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	5 mA
TPS601A(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V	.15 W	HIGH SENSITIVITY	.1 mA		.05 A
TPS618-A	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.027 mA
TPS622(A,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	1.5 mm	100 nA	1	YES	870		Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W		.027 mA		.05 A
TPS625(C)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	5 mA
TPS616-AB	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	900			85 Cel	ROUND	-30 Cel	30 V			.01 mA
TPS613	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3 mm	100 nA	1	NO	720		Photo Transistors	75 Cel	ROUND	-20 Cel	20 V			.02 mA
TPS608A-B	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.08 mA
TPS616-A	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	900			85 Cel	ROUND	-30 Cel	30 V			.01 mA
TPS616-C	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	900			85 Cel	ROUND	-30 Cel	30 V			.03 mA
TPS605	Toshiba	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.6 mm	250 nA	1	NO	720		Photo Transistors	70 Cel	ROUND	0 Cel	30 V	.075 W	DOUBLE END; HIGH SENSITIVITY	1 mA	e0	.04 A
TPS625(A)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	.6 mA
TPS616(AB,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	900		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.01 mA		.02 A
TPS615-B	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	800			85 Cel	ROUND	-30 Cel	30 V			.034 mA
TPS617	Toshiba	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	1.5 mm	250 nA	1	YES	870		Photo Transistors	75 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	1.4 mA	e0
TPS626(C)	Toshiba	PHOTO DARLINGTON			SINGLE	1.5 mm	250 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		HIGH SENSITIVITY; SIDE VIEW	3 mA
TPS614(F)	Toshiba		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			800		Photo Transistors	125 Cel		-40 Cel		.15 W			e0	.05 A
TPS616-BC	Toshiba	PHOTO TRANSISTOR			SINGLE	3.1 mm	100 nA	1	YES	900			85 Cel	ROUND	-30 Cel	30 V			.017 mA
TPS612-AB	Toshiba	PHOTO TRANSISTOR			SINGLE	3 mm	100 nA	1	YES	870			75 Cel	ROUND	-20 Cel	20 V			.014 mA
TPS621(A)	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.04 mA
TPS612	Toshiba	PHOTO TRANSISTOR			SINGLE	3 mm	100 nA	1	YES	870			75 Cel	ROUND	-20 Cel	20 V			.014 mA
TPS621(A,F)	Toshiba		THROUGH HOLE MOUNT				100 nA			820		Photo Transistors	85 Cel		-25 Cel		.075 W				.05 A
TPS622(A)	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.027 mA
TPS616(F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	900		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.01 mA		.02 A
TPS618-B	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	870			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.055 mA
TPS615(B,F)	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.034 mA		.02 A
TPS604	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	4.7 mm	200 nA	1	YES	800		Photo Transistors	125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	.2 mA	e0	.05 A
TPS606-B	Toshiba	PHOTO TRANSISTOR			SINGLE	1.65 mm	100 nA	1	NO	720			85 Cel	ROUND	-25 Cel	20 V		DOUBLE END	.01 mA
TPS608A-A	Toshiba	PHOTO TRANSISTOR			SINGLE	1.5 mm	100 nA	1	YES	820			85 Cel	ROUND	-25 Cel	30 V		SIDE VIEW	.04 mA
TPS605(LB)	Toshiba	PHOTO DARLINGTON			SINGLE	1.6 mm	250 nA	1	NO	720			70 Cel	ROUND	0 Cel	30 V		HIGH SENSITIVITY	1 mA
TPS615	Toshiba	PHOTO TRANSISTOR	THROUGH HOLE MOUNT		SINGLE	3.1 mm	100 nA	1	YES	800		Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.075 W		.02 mA		.02 A
TPS601A-A	Toshiba	PHOTO TRANSISTOR			SINGLE	4.7 mm	200 nA	1	YES	800			125 Cel	ROUND	-40 Cel	40 V		HIGH SENSITIVITY	.1 mA
PH102	Renesas Electronics	PHOTO TRANSISTOR	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	3.8 mm	200 nA	1			.000005 s	Photo Transistors	85 Cel	ROUND	-30 Cel	30 V	.1 W	HIGH SENSITIVITY	.18 mA	e0	.04 A
L14N2	Renesas Electronics		THROUGH HOLE MOUNT				100 nA			880	.000014 s	Photo Transistors	150 Cel		-55 Cel		.6 W				.05 A
PH101	Renesas Electronics	PHOTO DARLINGTON	SURFACE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	3.8 mm	500 nA	1		850		Photo Transistors	85 Cel	ROUND		20 V	.1 W	HIGH SENSITIVITY	12 mA	e0	.05 A
PH109	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA				.00002 s	Photo Transistors	80 Cel		-20 Cel		.1 W			e0	.05 A
PH107	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			400 nA					Photo Transistors	100 Cel				.1 W			e0	.05 A
PT8L	Renesas Electronics		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)								Photo Transistors	150 Cel		-40 Cel		.25 W			e0	.03 A
L14N1	Renesas Electronics		THROUGH HOLE MOUNT				100 nA			880	.00001 s	Photo Transistors	150 Cel		-55 Cel		.6 W				.05 A
PH104	Renesas Electronics	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)	SINGLE	5 mm	100 nA	1		780		Photo Transistors	100 Cel	RECTANGULAR		30 V	.1 W		.02 mA	e0	.04 A
PH116(L)	Renesas Electronics	PHOTO TRANSISTOR			SINGLE		100 nA	1	YES				85 Cel	ROUND	-30 Cel	30 V			.2 mA
L14R1	Renesas Electronics	PHOTO DARLINGTON	THROUGH HOLE MOUNT				100 nA			875	.000045 s	Photo Transistors	100 Cel		-55 Cel		.15 W

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.