Phototransistors

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Part	Manufacturer	Optoelectronic Type	Mounting Feature	Terminal Finish	Configuration	Size	Maximum Dark Current	No. of Functions	Infrared (IR) Range	Peak Wavelength (nm)	Packing Method	Maximum Response Time	Sub-Category	Maximum Operating Temperature	Shape	Minimum Operating Temperature	Minimum Collector-emitter Breakdown Voltage	Maximum Power Dissipation	Additional Features	Nominal Light Current	JESD-609 Code	Maximum On State Current
QSD722	Onsemi	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin (Sn)	SINGLE	4.675 mm	100 nA	1	YES	880		.000006 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W	HIGH SENSITIVITY, DAY LIGHT FILTER	.6 mA	e3
SPS103C	Onsemi		THROUGH HOLE MOUNT				100 nA			900			Photo Transistors	100 Cel		-25 Cel		.05 W				.02 A
SPS203C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850		.00003 s	Photo Transistors	100 Cel		-25 Cel		.05 W				.05 A
SPS181C	Onsemi		THROUGH HOLE MOUNT				200 nA			880			Photo Transistors	75 Cel		-20 Cel		.07 W				.02 A
QSD724	Onsemi	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Tin (Sn)	SINGLE	4.675 mm	100 nA	1	YES	880		.00001 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W	HIGH SENSITIVITY, DAY LIGHT FILTER	3.5 mA	e3
SPS189C	Onsemi		THROUGH HOLE MOUNT				200 nA			880			Photo Transistors	75 Cel		-20 Cel		.07 W				.02 A
SPS235C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850		.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
SPS103	Onsemi		THROUGH HOLE MOUNT				100 nA			800			Photo Transistors	100 Cel		-20 Cel		.05 W
SPS1118C	Onsemi		THROUGH HOLE MOUNT				200 nA			880			Photo Transistors	75 Cel		-20 Cel		.07 W
FLD00030	Onsemi	PHOTO TRANSISTOR		Matte Tin (Sn)	SINGLE	1.2 mm	100 nA	1	NO	630				85 Cel	RECTANGULAR	-40 Cel	6 V			1.1 mA	e3
SPS135C	Onsemi		THROUGH HOLE MOUNT				200 nA			880			Photo Transistors	75 Cel		-20 Cel		.07 W				.02 A
QSC114	Onsemi	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Matte Tin (Sn)	SINGLE	3 mm	100 nA	1	YES	880		.000007 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W		4 mA	e3
SPS289C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850		.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
QTLP610CPD	Onsemi	PHOTO TRANSISTOR			SINGLE	2 mm	100 nA	1	YES	860				85 Cel	RECTANGULAR	-25 Cel	30 V			.5 mA
QSC113	Onsemi	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	Matte Tin (Sn)	SINGLE	3 mm	100 nA	1	YES	880		.000005 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W		2.4 mA	e3
SPS281C	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT				1000 nA			850		.00003 s	Photo Transistors	80 Cel		-25 Cel		.05 W				.03 A
QSE122	Onsemi	PHOTO TRANSISTOR	THROUGH HOLE MOUNT	TIN	SINGLE	1.65 mm	100 nA	1	YES	880		.000008 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W	SIDE LOOKER	3 mA	e3
QSB363C	Onsemi	PHOTO TRANSISTOR	SURFACE MOUNT		SINGLE	2 mm	100 nA	1	YES	940				85 Cel	ROUND	-25 Cel	30 V	.075 W		1.5 mA
QSB363YR	Onsemi	PHOTO TRANSISTOR	SURFACE MOUNT	MATTE TIN	SINGLE	1.9 mm	100 nA	1	YES	940			Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	DAY LIGHT FILTER	1.5 mA	e3
QSB320F	Onsemi	PHOTO TRANSISTOR	SURFACE MOUNT		SINGLE	2.4 mm	200 nA	1	YES	880				100 Cel	ROUND	-55 Cel	30 V	.165 W	HIGH SENSITIVITY	.016 mA		.015 A
QSB320TR	Onsemi	PHOTO TRANSISTOR	SURFACE MOUNT	Tin (Sn)	SINGLE	2.4 mm	200 nA	1	YES	880	TR		Photo Transistors	100 Cel	ROUND	-55 Cel	30 V	.165 W	HIGH SENSITIVITY	.016 mA	e3	.015 A
QSE133	Onsemi	PHOTO DARLINGTON	THROUGH HOLE MOUNT	TIN	SINGLE	1.65 mm	100 nA	1	YES	880		.00002 s	Photo Transistors	100 Cel	ROUND	-40 Cel	30 V	.1 W	SIDE LOOKER	9 mA	e3
KDT00030	Onsemi	PHOTO TRANSISTOR			SINGLE	1.2 mm	100 nA	1	NO	630				85 Cel	RECTANGULAR	-40 Cel				.01 mA
QSB363GR	Onsemi	PHOTO TRANSISTOR	SURFACE MOUNT	MATTE TIN	SINGLE	1.9 mm	100 nA	1	YES	940			Photo Transistors	85 Cel	ROUND	-25 Cel	30 V	.075 W	DAY LIGHT FILTER	1.5 mA	e3
BPX38	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880			Photo Transistors	125 Cel		-55 Cel					e0	.05 A
BPX38-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			200 nA			870		.000009 s	Photo Transistors	85 Cel		-40 Cel		.33 W			e0	.05 A
SFH501-2	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840		.00004 s	Photo Transistors	100 Cel		-55 Cel		.125 W			e0	.02 A
BPX43	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880			Photo Transistors	125 Cel		-55 Cel					e0	.05 A
BPX43-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880		.000018 s	Photo Transistors	125 Cel		-55 Cel		.33 W			e0	.05 A
BPX43-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880		.000009 s	Photo Transistors	125 Cel		-55 Cel		.33 W			e0	.05 A
SFH500	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			825		.00000000025 s	Photo Transistors	100 Cel		-55 Cel		.1 W			e0	.02 A
BPX38-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870		.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W			e0	.05 A
BPX43-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			300 nA			880		.000012 s	Photo Transistors	125 Cel		-55 Cel		.33 W			e0	.05 A
BPX38-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870		.000012 s	Photo Transistors	85 Cel		-40 Cel		.33 W			e0	.05 A
LPD80A	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA						Photo Transistors	100 Cel		-40 Cel		.1 W			e0
BPX38-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			500 nA			870		.000015 s	Photo Transistors	125 Cel		-55 Cel		.33 W			e0	.05 A
BP103B4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850		.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BP103-5	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W			e0	.1 A
BP103	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850			Photo Transistors	80 Cel		-40 Cel					e0	.1 A
BP103B3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850		.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BP103-3	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		.000007 s	Photo Transistors	85 Cel		-40 Cel		.3 W			e0	.1 A
LPT85A	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			870			Photo Transistors	100 Cel		-40 Cel		.1 W			e0	.05 A
BP103-2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		.000005 s	Photo Transistors	85 Cel		-40 Cel		.3 W			e0	.1 A
BP103-6	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W			e0	.1 A
BP103B2	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)						850		.0000075 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BP103BF4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			900		.00001 s	Photo Transistors	100 Cel		-55 Cel		.2 W			e0	.05 A
BP103-4	Infineon Technologies		THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			100 nA			850		.000009 s	Photo Transistors	85 Cel		-40 Cel		.3 W			e0	.1 A
SFH501-1	Infineon Technologies	PHOTO DARLINGTON	THROUGH HOLE MOUNT	Tin/Lead (Sn/Pb)			50 nA			840		.000024 s	Photo Transistors	100 Cel		-55 Cel		.125 W			e0	.02 A

Phototransistors

A phototransistor is an electronic component that uses light to control the flow of electrical current. It is a type of bipolar transistor that is designed to respond to the presence of light by amplifying the current flowing through it. Phototransistors are widely used in a variety of applications, including in optical communication systems, photodetectors, and motion detectors.

Phototransistors work by using light to generate a flow of electrons that controls the flow of current through the transistor. When light hits the phototransistor, it causes electrons to be released, which flow through the transistor and control the current flowing through it. The current flowing through the transistor can be amplified and used to control other components in a circuit.