PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
S-AU57ASH	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
S-AU82H	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel			450 MHz	520 MHz
S-AU27AM	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		27.78 dBm	20		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			450 MHz	490 MHz
S-AV23AVH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			160 MHz	174 MHz
S9751A	Toshiba	NARROW BAND HIGH POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1900 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
S-AU80	Toshiba	NARROW BAND HIGH POWER		5	PLASTIC/EPOXY	HYBRID						3.6	MODULE,5LEAD,.53		RF/Microwave Amplifiers
S-AV36A	Toshiba				PLASTIC/EPOXY		1					12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
S-AU83H	Toshiba	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-30 Cel			450 MHz	520 MHz
S-AU57AVL	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
TA4012F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)	e0
TA4011F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel	Tin/Lead (Sn/Pb)	e0
S9751B	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1500 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
TA4011FU(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
TA4003F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
TA4023F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			36 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel
S-AV32	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel			134 MHz	174 MHz
TA4013FU	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				14 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Tin/Lead (Sn/Pb)	e0
S-AV28	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		17 dBm	20		MODULE	9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			144 MHz	148 MHz
S9747	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				350 mA		6	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
S-AU35ASH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			490 MHz	512 MHz
S-AU55	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	GAAS		12 dBm	3	390 mA	COMPONENT	5.5,5.8	SMSIP5/6H,.5	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel	Tin/Lead (Sn/Pb)	e0	824 MHz	849 MHz
TA4004F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel			700 MHz
S-AU5M	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
S-AU39	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		27.78 dBm	20		MODULE	13.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			889 MHz	915 MHz
S-AV17	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		27.78 dBm	2		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-30 Cel			144 MHz	148 MHz
S-AV34	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	10.8	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers						150 MHz	165 MHz
S-AV22A	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		14.77 dBm	20		MODULE	5,12.5	FLNG,1.45"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			144 MHz	148 MHz
S-AV10H	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		24.77 dBm	2		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-30 Cel			150 MHz	175 MHz
S-AU86	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	25.05 dBm	20	1700 mA	MODULE	12	FLNG,1.45"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			889 MHz	915 MHz
S-AU35AVH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel			470 MHz	490 MHz
S-AU83L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-30 Cel			400 MHz	470 MHz
TG2006F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		10 dBm	20	150 mA	COMPONENT	3	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	21 dB	-40 Cel			1895 MHz	1918 MHz
S-AU68M	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID						4,9.6	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
TA4003F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA	COMPONENT	2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
S-AU77	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	HYBRID		12.3 dBm	20		MODULE	6	LCC5(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	e0	872 MHz	905 MHz
S9751	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	GAAS				1400 mA		9	FL6,.4,100		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
TA4017FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	2			25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel			700 MHz
TA4020FT	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR	1	10 dBm		7 mA	COMPONENT	3	SOT-143R		RF/Microwave Amplifiers	85 Cel	8.5 dB	-40 Cel			1500 MHz	2600 MHz
S-AU93	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	5,12	FLNG,2.36"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel			430 MHz	500 MHz
TG2005F	Toshiba	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS	1			180 mA		-1.3,3	TSSOP8,.16		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
TA4000F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				15 mA		5	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
TA4022F	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR	1			42 mA	COMPONENT	5	TSSOP8,.16	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel
TA4011AFE	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			4.5 mA	COMPONENT	2	TSSOP6,.06,20	50 ohm	RF/Microwave Amplifiers	85 Cel	8 dB	-40 Cel
S-AU57AL	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
TA4011FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSSOP6,.08		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)	e0
S9750	Toshiba	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		13 dBm		400 mA	COMPONENT	6	FL8,.32FL	50 ohm	RF/Microwave Amplifiers	80 Cel	19 dB	-30 Cel	Tin/Lead (Sn/Pb)	e0
TG2006FTE12L	Toshiba		SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS				150 mA		3	TSSOP8,.16		RF/Microwave Amplifiers				Tin/Lead (Sn/Pb)	e0
TMD5872-2	Toshiba	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	GAAS	1	10 dBm	3	1600 mA	MODULE	10,-5	FLNG,.53"H.SPACE		RF/Microwave Amplifiers	80 Cel		-30 Cel			5800 MHz	7200 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.