PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MAX2652EUB	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			11 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2373ETC	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	TIN LEAD		e0	850 MHz	940 MHz
MAX2631EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	800 MHz	1000 MHz
MAX2632EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR		5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2430ISE-T	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR	1	-3 dBm	8	70 mA		3.3/5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	32 dB	-20 Cel	Tin/Lead (Sn85Pb15)		e0	800 MHz	1000 MHz
MAX2216EBV	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	30	PLASTIC/EPOXY		2	14 dBm	10		COMPONENT	3/5	BGA30,5X6,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ AND 1850 TO 1910 MHZ	e0	880 MHz	915 MHz
MAX2371EGC+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	MATTE TIN		e3	136 MHz	174 MHz
MAX2632EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	MATTE TIN	LOW NOISE	e3	800 MHz	1000 MHz
MAX2641EUT-T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		5 dBm		5.5 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD	LOW NOISE	e0	1400 MHz	2500 MHz
MAX2651EUB	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2240EBL+T	Maxim Integrated		SURFACE MOUNT	9	PLASTIC/EPOXY		1			155 mA		3/5	BGA9,3X3,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN SILVER COPPER		e1
MAX2631EUK+T	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
MAX2644EXT	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		11 mA	COMPONENT	3	TSSOP6,.08	50 ohm		85 Cel	15 dB	-40 Cel	NICKEL PALLADIUM GOLD		e4	2400 MHz	2500 MHz
MAX2235EUP	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	BIPOLAR	1	13 dBm	1.5		COMPONENT	3/5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-40 Cel	TIN LEAD		e0	800 MHz	1000 MHz
MAX2652EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			11 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn85Pb15)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
MAX2242EBC-T	Maxim Integrated	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	10 dBm	2.5	335 mA	COMPONENT	2.7/3.6	BGA12,3X4,20	50 ohm	RF/Microwave Amplifiers	70 Cel	25.5 dB	0 Cel	TIN LEAD		e0	2400 MHz	2500 MHz
MAX2641EUT	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		6.4 mA	COMPONENT	3/5	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	12.4 dB	-40 Cel	TIN LEAD		e0	1400 MHz	2500 MHz
MAX2371EGC-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Tin/Lead (Sn85Pb15)		e0	136 MHz	174 MHz
MAX2656EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		15.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12 dB	-40 Cel	Matte Tin (Sn)		e3	1800 MHz	2000 MHz
MAX2246EBL-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	9	PLASTIC/EPOXY	BIPOLAR	1	10 dBm	6	144 mA	COMPONENT	3	BGA9,3X3,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn63Pb37)		e0	2400 MHz	2500 MHz
MAX2371EGC+	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	12	PLASTIC/EPOXY		1	5 dBm		5.5 mA	COMPONENT	2.7	LCC12,.12SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	10.5 dB	-40 Cel	Matte Tin (Sn)		e3	136 MHz	174 MHz
MAX2430IEE	Maxim Integrated	WIDE BAND MEDIUM POWER	SURFACE MOUNT	28	PLASTIC/EPOXY	BIPOLAR		3 dBm	8	70 mA		3.3/5	SSOP28,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	31 dB	-20 Cel	Tin/Lead (Sn/Pb)		e0	800 MHz	1000 MHz
MAX2654EXT+T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1	5 dBm		9.2 mA	COMPONENT	3/5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	12.7 dB	-40 Cel	NICKEL GOLD PALLADIUM			1400 MHz	1700 MHz
MAX2631EUK+	Maxim Integrated	WIDE BAND LOW POWER	SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR	1	5 dBm	1.25	11 mA	COMPONENT	3	TSOP5/6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel	11 dB	-40 Cel	Matte Tin (Sn)	LOW NOISE	e3	800 MHz	1000 MHz
MAX2687EWS+T10	Maxim Integrated		SURFACE MOUNT	4	PLASTIC/EPOXY	BICMOS	1					1.8/3.3	BGA4,2X2,16		RF/Microwave Amplifiers	85 Cel		-40 Cel
MAX2651EUB-T	Maxim Integrated	NARROW BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY	BIPOLAR	2			9.6 mA	COMPONENT	3	TSSOP10,.19,20	50 ohm	RF/Microwave Amplifiers	85 Cel	16 dB	-40 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1805 TO 1880 MHZ	e0	925 MHz	960 MHz
S-AU68L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		17 dBm	5		COMPONENT	4,9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	420 MHz
TA4004F(TE85L)	Toshiba		SURFACE MOUNT	5	PLASTIC/EPOXY	BIPOLAR				4.5 mA		2	TSOP5/6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel
S-AV9H	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers	100 Cel		-30 Cel
S-AU27AH	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		27.78 dBm	20		MODULE	15	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				490 MHz	512 MHz
TA4001F(TE85L)	Toshiba		SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR				24 mA		5	SOT-143R		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4012AFE(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8.5 mA		2	TSSOP6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0
S-AU35AL	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	430 MHz
S-AU82L	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	30.7 dB	-30 Cel				400 MHz	470 MHz
S-AV36	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	20 dBm	3		COMPONENT	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	32 dB	-30 Cel				134 MHz	174 MHz
S-AU50M	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.76 dBm	3		COMPONENT	9.6	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	21.4 dB	-30 Cel				430 MHz	480 MHz
S-AU57AH	Toshiba				PLASTIC/EPOXY	HYBRID						5,7.5	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers
S-AV23AL	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		26 dBm	20		MODULE	5,7.5	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				135 MHz	150 MHz
S-AV38	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	17 dBm	2.5		COMPONENT	7.2	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				260 MHz	266 MHz
S-AU70	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		24.77 dBm	20		MODULE	13	FLNG,1.45"H.SPACE	50 ohm	RF/Microwave Amplifiers	110 Cel		-30 Cel				824 MHz	849 MHz
TA4012FU	Toshiba	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR				8.5 mA	COMPONENT	2	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	10 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0
TA4016AFE(TE85L)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			8 mA		2	TSSOP6,.06,20		RF/Microwave Amplifiers	85 Cel		-40 Cel
S-AU5H	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
S-AU7	Toshiba				PLASTIC/EPOXY	HYBRID						12.5	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
TA4008F	Toshiba	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			2.5	12 mA	COMPONENT	3	TSOP6,.11,37	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1640 MHz	1700 MHz
S-AV7	Toshiba	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		24.77 dBm	20		MODULE	12.5	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				144 MHz	148 MHz
TA4000F(TE85L,F)	Toshiba		SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			15 mA		5	TSOP6,.11,37		RF/Microwave Amplifiers	85 Cel		-40 Cel

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.