PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MW7IC3825NR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

45 dBm

10

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

21 dB

Matte Tin (Sn)

e3

3400 MHz

3600 MHz

BGA2711

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

16 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

13.9 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGA2851,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

7.8 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

23.7 dB

-40 Cel

TIN

LOW NOISE

e3

0 MHz

2200 MHz

MW7IC930NBR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MOS

1

20 dBm

10

COMPONENT

28

FLNG,.8''H SPACE

50 ohm

RF/Microwave Amplifiers

33 dB

TIN

IT CAN ALSO OPERATE AT 728 TO 768 MHZ

e3

920 MHz

960 MHz

BGA2803,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

6.6 mA

COMPONENT

3.3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

21.2 dB

TIN

LOW NOISE

e3

0 MHz

2200 MHz

BGA2800,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

12.1 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

TIN

e3

MW7IC2020NT1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

MOS

1

37 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

RF/Microwave Amplifiers

31 dB

TIN

e3

1805 MHz

2170 MHz

BGA2771

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

45 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.8 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGU8H1

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

26 dBm

1.22

7 mA

COMPONENT

0.8/1.8

50 ohm

85 Cel

10.5 dB

-40 Cel

2300 MHz

2690 MHz

BGU7042,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

60 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

Tin (Sn)

e3

935305477118

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

10

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.43

85 mA

COMPONENT

5

SOLCC10,.12SQ,20

50 ohm

NICKEL PALLADIUM GOLD

e4

1500 MHz

2700 MHz

MW7IC18100GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

5

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

27 dB

Matte Tin (Sn)

e3

1805 MHz

2050 MHz

BGA2748

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

8 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18.5 dB

Tin (Sn)

LOW NOISE

e3

1000 MHz

2000 MHz

BGA2771,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

45 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20.8 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

935311653147

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

GAAS

1

23 dBm

104 mA

COMPONENT

5

TO-243

50 ohm

18.4 dB

450 MHz

3800 MHz

MMG3015NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

12 dBm

120 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

14 dB

Matte Tin (Sn)

e3

0 MHz

6000 MHz

BGU7045,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

38 mA

3.3

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

-40 Cel

TIN

e3

935375787528

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

LDMOS

1

20 dBm

10

COMPONENT

48

50 ohm

150 Cel

35 dB

-40 Cel

Tin (Sn)

e3

575 MHz

960 MHz

MW7IC2240GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MOS

1

20 dBm

5

420 mA

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

150 Cel

28 dB

TIN

e3

2000 MHz

2200 MHz

MW7IC2040NBR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MOS

1

25 dBm

5

COMPONENT

28

FLNG,.8''H SPACE

50 ohm

RF/Microwave Amplifiers

29.5 dB

Matte Tin (Sn)

e3

1805 MHz

1990 MHz

BGA2776

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

10 dBm

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

150 Cel

23.2 dB

Tin (Sn)

e3

1000 MHz

2000 MHz

BGA2717

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

-10 dBm

10 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

20 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGU8L1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

IEC-60134

1

26 dBm

1.22

6.6 mA

COMPONENT

0.8/1.8,2.8

SOLCC6,.03,16

50 ohm

85 Cel

12.5 dB

-40 Cel

728 MHz

960 MHz

935343962528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

2

20 dBm

10

COMPONENT

28

50 ohm

150 Cel

30.5 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

3100 MHz

BGA2003

NXP Semiconductors

WIDE BAND LOW POWER

PLASTIC/EPOXY

BIPOLAR

COMPONENT

2.5

SOT-343R

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

LOW NOISE

e3

900 MHz

1800 MHz

BGA2715

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

5.5 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Matte Tin (Sn)

e3

100 MHz

3000 MHz

BGU7031,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

60 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

70 Cel

-10 Cel

TIN

e3

BGA2709,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

32 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGA2031/1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

23 dBm

3.5

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

23 dB

Tin (Sn)

e3

800 MHz

2500 MHz

BGA2711,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

16 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

13.9 dB

Tin (Sn)

e3

3600 MHz

BGU8052

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

-40 Cel

1500 MHz

2500 MHz

BGU8053

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.08

85 mA

COMPONENT

5

SOLCC8,.08SQ,20

50 ohm

85 Cel

-40 Cel

2000 MHz

6000 MHz

BGU8006,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

1.8

BGA6,2X3,8

RF/Microwave Amplifiers

85 Cel

-40 Cel

BGA2714

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

5.7 mA

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

0 MHz

2700 MHz

MMG3010NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

3

PLASTIC/EPOXY

BIPOLAR

1

10 dBm

63 mA

COMPONENT

5

TO-243

50 ohm

RF/Microwave Amplifiers

12 dB

MATTE TIN

e3

0 MHz

6000 MHz

BGA2716

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

-10 dBm

21 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

19 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGA2802,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

-16.5 dBm

15.2 mA

COMPONENT

3.3

TSOP6,.08

50 ohm

RF/Microwave Amplifiers

85 Cel

29.6 dB

-40 Cel

TIN

LOW NOISE

e3

0 MHz

2200 MHz

935316286528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

BGA2865,115

NXP Semiconductors

SURFACE MOUNT

6

PLASTIC/EPOXY

1

29.7 mA

5

TSSOP6,.08

RF/Microwave Amplifiers

935322497528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

26 dBm

10

COMPONENT

28

50 ohm

150 Cel

23 dB

-40 Cel

Tin (Sn)

e3

3400 MHz

3800 MHz

935316291528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

17

PLASTIC/EPOXY

LDMOS

1

18 dBm

10

COMPONENT

28

50 ohm

150 Cel

31.5 dB

-40 Cel

Tin (Sn)

e3

1400 MHz

2200 MHz

BGA2712

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

1

15 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

16 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGU7052,118

NXP Semiconductors

SURFACE MOUNT

10

PLASTIC/EPOXY

1

95 mA

3.3

SOLCC10,.12,20

RF/Microwave Amplifiers

85 Cel

-40 Cel

935375786528

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

LDMOS

1

20 dBm

10

COMPONENT

48

50 ohm

150 Cel

35 dB

-40 Cel

Tin (Sn)

e3

575 MHz

960 MHz

935361937528

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

1

20 dBm

10

COMPONENT

28

LCC24,.3SQ,32

50 ohm

150 Cel

29.7 dB

-40 Cel

Tin (Sn)

e3

2400 MHz

2500 MHz

BGU8051

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

20 dBm

1.07

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

85 Cel

17 dB

-40 Cel

300 MHz

1500 MHz

BGA2715,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

1

-10 dBm

5.5 mA

COMPONENT

5

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

18 dB

Tin (Sn)

e3

100 MHz

3000 MHz

BGA2031/1,115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BIPOLAR

10 dBm

1.4

COMPONENT

3

TSSOP6,.08

50 ohm

RF/Microwave Amplifiers

23 dB

Tin (Sn)

e3

800 MHz

2500 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.