PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGE787B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD904,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
A3I20X050NR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
A3M40PD012T7	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1	25 dBm	1.38	300 mA	COMPONENT	3.3	LCC12,.08SQ,20	50 ohm		125 Cel	30 dB					2300 MHz	4200 MHz
AFSC5G23E37T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,20	50 ohm		125 Cel	32 dB			I/P POWER-MAX (PEAK)=25DBM		2300 MHz	2400 MHz
MMM5063	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	GAAS		1	11 dBm	10		COMPONENT	1.8,32.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				880 MHz	915 MHz
BGY84	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGA7014,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			85 mA		5	TO-243		RF/Microwave Amplifiers
BGY587B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY280	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY			2	10 dBm	3		COMPONENT	3.6	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	-30 Cel		IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ		880 MHz	915 MHz
BGD702	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA4815CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	400 mA	MODULE	15	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGD804	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGS8H2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
SA2410	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS						COMPONENT	3.3/5	QFP32,.35SQ,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-40 Cel				2400 MHz	2500 MHz
BGY87B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	26.2 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY583	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	16.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	14.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
BGD902,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
BGY89	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	37 dB	-20 Cel		LOWNOISE		40 MHz	450 MHz
BGD885,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY887B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
BGY687,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
A3I20X050GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
BTS6302UJ	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.67	120 mA	COMPONENT	5	LCC16,.12SQ,20	50 ohm		115 Cel	33.8 dB	-40 Cel				2300 MHz	5000 MHz
MHW9236	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			270 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	23 dB	-20 Cel				40 MHz	870 MHz
MHW8272A	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHL18336	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	10 dBm	1.5	525 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				1800 MHz	1900 MHz
MHW9276	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW8185LR	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MMG2401NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1				COMPONENT	3.3	LCC12,.12SQ,20		RF/Microwave Amplifiers	85 Cel	26 dB	-40 Cel	Matte Tin (Sn)		e3	2400 MHz	2500 MHz
MHW1254L	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.3 dB	-20 Cel				5 MHz	50 MHz
CGY887A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	25.7 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MHW1303LA	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			110 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	30 dB	-20 Cel				5 MHz	200 MHz
MHW8205R	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel				40 MHz	860 MHz
MHW7205C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel				40 MHz	750 MHz
MMG20271HT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	12	PLASTIC/EPOXY			1			227 mA		5	LCC12,.12SQ,20		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW9206	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			260 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.6 dB	-20 Cel				47 MHz	870 MHz
MHW8342	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR					350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel				40 MHz	870 MHz
MHW8188A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS					440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW1345N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	BIPOLAR		1	5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33.5 dB	20 Cel				10 MHz	200 MHz
MHVIC2115R2	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3	204 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	31 dB					1600 MHz	2600 MHz
MHL9236MN	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			1	10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				800 MHz	960 MHz
CGD1046HI,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			465 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
MMH3111NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	20 dBm		190 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		10 dB		Matte Tin (Sn)		e3	250 MHz	4000 MHz
MHL18926N	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	18 dBm	1.5	1150 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	27.1 dB	-20 Cel				1805 MHz	1880 MHz
MHW1254LA	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			110 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel				5 MHz	65 MHz
MHW1346	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR		1			350 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel				5 MHz	200 MHz
MHVIC915R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1		3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel				746 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.