PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BLM7G1822S-40PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	FL16(UNSPEC)		RF/Microwave Amplifiers
BGM1014,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		25 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	85 Cel	25 dB	-40 Cel	Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGD802	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
MW5IC2030GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Matte Tin (Sn)		e3	1930 MHz	1990 MHz
BGA7024,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
BGY120B	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				872 MHz	905 MHz
BGF844,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGA6489	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		86 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
SA5200D	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			20 dBm		8.4 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	1200 MHz
CGY2011G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
CA4812CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	400 mA	MODULE	12	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGA3031J	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY			1					5	LCC20,.20SQ,25		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD SILVER		e4
BGY835C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
BGA6589	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
BGY86	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGY925/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
BGY67	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
CA4800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	240 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
A3I35D025WGNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
BGY883,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
MW4IC2230GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	2110 MHz	2170 MHz
BGA7024,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
BLM7G1822S-40ABGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
A3I20X050GNR3	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel				1800 MHz	2200 MHz
BGD702N,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA901A	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID			-34.75 dBm			MODULE	24	MOT CASE 714P-01	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		HIGH RELIABILITY		40 MHz	860 MHz
BGF1801-10	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1		2.2	280 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-20 Cel				1805 MHz	1880 MHz
BGU2003	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR		1			15 mA	COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		13 dB
OM321	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
A2I09VD050GNR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS		1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
BGY587	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGD702,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY585A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BLM6G22-30G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
AFSC5G35E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	30	LCC26,.24X.4,40	50 ohm		125 Cel	29.3 dB		NICKEL PALLADIUM GOLD		e4	3400 MHz	3700 MHz
BGY885A/02,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
UAA3592HN	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	0 dBm		50 mA	COMPONENT	2.7,3.6	LCC16,.16SQ,25		RF/Microwave Amplifiers	70 Cel		-30 Cel				1920 MHz	1980 MHz
MW4IC2230MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	2110 MHz	2170 MHz
BGD812	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
UGY1088,118	NXP Semiconductors		SURFACE MOUNT	32	PLASTIC/EPOXY			1			300 mA		24	LCC32,.2SQ,20		RF/Microwave Amplifiers
BGD712C,112	NXP Semiconductors				PLASTIC/EPOXY			1			410 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGY67A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
AFIC31025GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGS8H2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
BGY2016,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20.79 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				1805 MHz	1990 MHz
934068191115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
MDE6IC9120GNR1	NXP Semiconductors				PLASTIC/EPOXY	MOS		2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
MHW2821-1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	3	500 mA	COMPONENT	12.5	MOT CASE 301AB-02	50 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-30 Cel				806 MHz	870 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.