PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
A2I09VD050NR1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS	1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	TIN		e3	575 MHz	960 MHz
BGY685A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
BGA3031X	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY		1					5	LCC20,.20SQ,25		RF/Microwave Amplifiers				NICKEL PALLADIUM GOLD SILVER		e4
MRFIC1501R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		7.5 mA	COMPONENT	5	SOP8,.25	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	1000 MHz	2000 MHz
BGY888,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
MRFIC1856R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	15 dBm	10		COMPONENT	-4.4,4.8	TSSOP20,.25		RF/Microwave Amplifiers	85 Cel	29 dB	-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ	e0	824 MHz	849 MHz
BGF844	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY68	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29.2 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	75 MHz
BGY687B	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
MW4IC2230GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
MRFIC1819R2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	1900 MHz
BGX885N	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	17.3 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
MWE6IC9080NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20.5 dBm	10		MODULE	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		MATTE TIN		e3	865 MHz	960 MHz
BGA7017,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY		1			100 mA		5	TO-243		RF/Microwave Amplifiers
MW6IC1940GNBR1	NXP Semiconductors	NARROW BAND MEDIUM POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3	440 mA	COMPONENT	28	MOT CASE 1329A-03	50 ohm	RF/Microwave Amplifiers	150 Cel	26 dB		Matte Tin (Sn)		e3	1920 MHz	2000 MHz
BGD714	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
OM322	NXP Semiconductors				PLASTIC/EPOXY	HYBRID						24	FLANGE MT,1.5X1.0		RF/Microwave Amplifiers	70 Cel		-20 Cel
MW4IC2020MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY		1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
BGY785A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY885A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
AFSC5G37E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	29	LCC26,.24X.4,20	50 ohm		125 Cel	25.4 dB		NICKEL PALLADIUM GOLD		e4	3600 MHz	3800 MHz
BGE788	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
A3M37TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.1 dB		NICKEL PALLADIUM GOLD	I/P POWER-MAX (PEAK)=25DBM	e4	3600 MHz	3800 MHz
BGY685A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
MW4IC915MBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e0	860 MHz	960 MHz
BGD712C	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY		1			410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CGY2014TT	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS	2	10 dBm		3000 mA	COMPONENT	3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
MW4IC2020NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS	1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
BGD904L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD904MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD704/09,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID	1			435 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGA7014	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY		1			85 mA		5	TO-243		RF/Microwave Amplifiers
CGY2030M	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		5 dBm			COMPONENT	3.3	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-30 Cel				1880 MHz	2000 MHz
CGY2021G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS		2 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	34 dB	-20 Cel		IT CAN ALSO OPERATE AT 1850 TO 1910 MHZ		1710 MHz	1785 MHz
BGY66B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
CA5800CS	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		18 dBm	2.6	440 mA	MODULE	28	MOT CASE 714T-01	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGD902L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MRFIC1859R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY	GAAS	2	12 dBm	6		COMPONENT	3.6	TQFP32,.28SQ	50 ohm	RF/Microwave Amplifiers	100 Cel		-35 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 1710 TO 1785 MHZ	e0	880 MHz	915 MHz
OM336	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID						24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
MRFIC1808	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS		3 dBm		5.5 mA	COMPONENT	3	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	1700 MHz	2100 MHz
A3M34TL139T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	27	LCC26,.24X.4,20	50 ohm		125 Cel	25.6 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3580 MHz
BGD904	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
A2I35H060NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
MRFIC0919R2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1	12 dBm	10		COMPONENT	3.6	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin/Lead (Sn/Pb)		e0	880 MHz	915 MHz
A3M35TL039T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS	1				COMPONENT	26	LCC26,.24X.4,40	50 ohm		125 Cel	26.5 dB			I/P POWER-MAX (PEAK)=25DBM		3300 MHz	3700 MHz
AFIC31025NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	2	20 dBm	10		COMPONENT	28		50 ohm		150 Cel	30.5 dB	-40 Cel	TIN		e3	2400 MHz	3100 MHz
BGM1011	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR	1			32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		28 dB		Tin (Sn)		e3
A3I35D025WNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS	1	28 dBm	10		COMPONENT	28		50 ohm		150 Cel	26.5 dB	-40 Cel	TIN		e3	3200 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.