PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGD804,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY85A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
CGY2014ATW	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		2	10 dBm		300 mA	COMPONENT	2.8,3.5	TSSOP20,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-20 Cel		IT CAN ALSO OPERATE AT 1710 TO 1910 MHZ		880 MHz	915 MHz
BGD508	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID		1			625 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	36.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	550 MHz
BGS67A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGU6009/N2X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
CGY2013G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm		3 mA	COMPONENT	3.3	QFP48,.35SQ,20	50 ohm	RF/Microwave Amplifiers	85 Cel	35.5 dB	-20 Cel		LOW NOISE		880 MHz	915 MHz
BGA7014,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			85 mA		5	TO-243		RF/Microwave Amplifiers
BGY916/5,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	19 dBm	2		MODULE	5,26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-10 Cel				920 MHz	960 MHz
BGY241	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID		1	10 dBm	3		COMPONENT	3.5	MODULE,4LEAD,.67	50 ohm	RF/Microwave Amplifiers	100 Cel	35.2 dB	-30 Cel				880 MHz	915 MHz
MRFIC0916T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm		5.6 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
MWIC930R1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
BGY67A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY67,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BLM7G1822S-20PBY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
BGA7124,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			200 mA		3.3/5	SOLCC8,.12,20		RF/Microwave Amplifiers
BGY835C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			340 mA		24	SOT-115J		RF/Microwave Amplifiers
BGF802-20,127	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGM1012,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	100 MHz	3000 MHz
MW5IC2030MBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm			COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		21.5 dB		Tin/Lead (Sn/Pb)		e0	1930 MHz	1990 MHz
MW4IC915GMBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e0	860 MHz	960 MHz
CGY2032BTS	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1	15 dBm		800 mA	COMPONENT	3.2	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-30 Cel				1880 MHz	1900 MHz
BLM7G22S-60PB,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	FL16(UNSPEC)		RF/Microwave Amplifiers
CGY2010G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			1.5 dBm			COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel		-20 Cel				880 MHz	915 MHz
CA2810C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2	330 mA	MODULE	24	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel	33 dB	-20 Cel		HIGH RELIABILITY		10 MHz	450 MHz
SA5205AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	17 dB	-40 Cel				0 MHz	600 MHz
BGA7017,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			100 mA		5	TO-243		RF/Microwave Amplifiers
934069191115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.67	7.8 mA	COMPONENT	1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	9.2 dB	-40 Cel				2300 MHz	2690 MHz
MW6IC2015GNBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	24 dB	-10 Cel	Matte Tin (Sn)		e3	1805 MHz	1990 MHz
BGA6589,135	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		89 mA	COMPONENT	9	TO-243	50 ohm	RF/Microwave Amplifiers		15 dB		Tin (Sn)		e3	850 MHz	2500 MHz
MDE6IC7120NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		2	30 dBm	10		COMPONENT	28	FLNG,1.0"H.SPACE	50 ohm	RF/Microwave Amplifiers		32 dB		Matte Tin (Sn)		e3	728 MHz	768 MHz
SA5209D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	850 MHz
BGY888	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
MWIC930GR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
OM335	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
MW4IC2230NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	28	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Matte Tin (Sn)		e3	2110 MHz	2170 MHz
CGY2020G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm		1.3 mA	COMPONENT	4.5	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MRFIC0970	NXP Semiconductors		SURFACE MOUNT	20	PLASTIC/EPOXY	GAAS		1					3.2	LCC20,.16SQ,20		RF/Microwave Amplifiers
BGS67A,112	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1			95 mA	COMPONENT	12	DILCC8,.46	75 ohm	RF/Microwave Amplifiers	100 Cel	25 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	65 MHz
BGY588C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			345 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	33.7 dB	-20 Cel				40 MHz	550 MHz
MRFIC1869	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	32	PLASTIC/EPOXY			2				COMPONENT	3.6	LCC32,.2SQ,20		RF/Microwave Amplifiers	100 Cel		-35 Cel
BGY580	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	12.5 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
MMM5062	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY			1	10 dBm	10		COMPONENT	1.8,2.8,3.5	DIE OR CHIP	50 ohm		100 Cel		-35 Cel				824 MHz	849 MHz
BGD814	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY585A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY148A	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			13 dBm	3	.1 mA	MODULE	6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				400 MHz	440 MHz
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY1085A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.