PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
CGD944C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1					24	SOT-115J		RF/Microwave Amplifiers
CGY887,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			250 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel				40 MHz	870 MHz
MHVIC910HR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	10	150 mA	COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
CGD914MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.2 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MMZ27333BT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	HYBRID		1	10 dBm	1.55		COMPONENT	5	LCC24,.16SQ,20	50 ohm			34.8 dB		TIN		e3	1500 MHz	2700 MHz
MHV5IC2215NR2	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	12 dBm	3		COMPONENT	28	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers		23 dB					1500 MHz	2200 MHz
MHW9186A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MC13850EP	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		12.5 mA	COMPONENT	2.7	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				400 MHz	2500 MHz
MHW1353LA	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			110 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel				5 MHz	150 MHz
MD7IC2050NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			2	28 dBm	5		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers		28.5 dB		TIN	USABLE AT 1750 TO 2050 MHZ	e3	1880 MHz	2100 MHz
CGY888C	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID		1			300 mA	MODULE	24	SOT-115J		RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel		LOW NOISE		40 MHz	870 MHz
MHW9189A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW1254LC	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	HYBRID					110 mA		12	MOT CASE 431A-02	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				5 MHz	200 MHz
MHW7182B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel				40 MHz	750 MHz
MHVIC2114NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHW9187	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			440 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.4 dB	-20 Cel				40 MHz	870 MHz
MHPA18010	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	2		COMPONENT	28	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel				1800 MHz	1900 MHz
MC13851EPR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BICMOS		1	10 dBm		5.8 mA	COMPONENT	2.75	SOLCC8,.08,20	50 ohm	RF/Microwave Amplifiers	85 Cel	14.5 dB	-30 Cel				1000 MHz	2500 MHz
MMG20271H9T1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	25 dBm		271 mA	COMPONENT	5	TO-243	50 ohm	RF/Microwave Amplifiers		13.4 dB		MATTE TIN		e3	1500 MHz	2700 MHz
MHW9267A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			460 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MD7IC2012NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			2					28	FLNG,.67"H.SPACE		RF/Microwave Amplifiers				TIN		e3
CGD923,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			490 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.5 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MHW1304LC	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	HYBRID					110 mA		12	MOT CASE 431A-02	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				5 MHz	200 MHz
MHVIC910HNR2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS		1	5 dBm	10		COMPONENT	26	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	85 Cel	38 dB	-30 Cel				921 MHz	960 MHz
MHL19338	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			10 dBm	1.5	525 mA	COMPONENT	28	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				1900 MHz	2000 MHz
MHL9318	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			20 dBm	1.5	560 mA	COMPONENT	28	MOT CASE 301-01	50 ohm	RF/Microwave Amplifiers	100 Cel	17 dB	-20 Cel				860 MHz	900 MHz
MHW8222	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.8 dB	-20 Cel				40 MHz	860 MHz
CGD987HCI,112	NXP Semiconductors				PLASTIC/EPOXY	GAAS		1			460 mA		24	SOT-115J		RF/Microwave Amplifiers
MHW9188	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS		1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
MHL19936	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	16 dBm	1.5	1450 mA	COMPONENT	26	MOT CASE 301AY-01	50 ohm	RF/Microwave Amplifiers	100 Cel	28 dB	-20 Cel				1900 MHz	2000 MHz
MHW7222A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		240 mA	MODULE	28	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	750 MHz
BGA2717,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	-10 dBm		10 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		20 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2001	NXP Semiconductors	NARROW BAND LOW POWER			PLASTIC/EPOXY	BIPOLAR						COMPONENT	2.5	SOT-343R	50 ohm	RF/Microwave Amplifiers		19.5 dB		Tin (Sn)	LOW NOISE	e3	900 MHz	1800 MHz
BGA2031/1T/R	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR			10 dBm	1.4		COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		23 dB					800 MHz	2500 MHz
MMG3004NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR		1	18 dBm		275 mA	COMPONENT	5	LCC16(UNSPEC)	50 ohm	RF/Microwave Amplifiers		15 dB					400 MHz	2200 MHz
BGA2012	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			10 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers	150 Cel	14 dB		Tin (Sn)		e3
BGA2714,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1			5.7 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)		e3	0 MHz	2700 MHz
BGA2748,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1	10 dBm		8 mA	COMPONENT	3	TSOP6,.08	50 ohm	RF/Microwave Amplifiers		18.5 dB		Tin (Sn)	LOW NOISE	e3	1000 MHz	2000 MHz
BGU7032,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY			1				COMPONENT	5	TSSOP6,.08		RF/Microwave Amplifiers	70 Cel		-10 Cel	TIN		e3		1000 MHz
BGU7003,132	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			15 mA		2.5	SOLCC6,.04,14		RF/Microwave Amplifiers	85 Cel		-40 Cel	Tin (Sn)		e3
935323765528	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	14	PLASTIC/EPOXY	LDMOS		1	25 dBm	10		COMPONENT	50		50 ohm		150 Cel	30.5 dB	-55 Cel	Tin (Sn)		e3	1030 MHz	1090 MHz
BGU8H1X	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGA2874,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			19 mA		2.5	TSSOP6,.08		RF/Microwave Amplifiers				TIN		e3
BGA2709	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		32 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		18 dB		Tin (Sn)		e3	100 MHz	3000 MHz
BGA2850,115	NXP Semiconductors		SURFACE MOUNT	6	PLASTIC/EPOXY			1			10.8 mA		5	TSSOP6,.08		RF/Microwave Amplifiers
MMG3003NT1	NXP Semiconductors	WIDE BAND MEDIUM POWER	SURFACE MOUNT	3	PLASTIC/EPOXY	BIPOLAR		1	15 dBm		205 mA	COMPONENT	6.2	TO-243	50 ohm	RF/Microwave Amplifiers		19.3 dB		Matte Tin (Sn)		e3	40 MHz	3600 MHz
BGU8062	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	10	PLASTIC/EPOXY		IEC-60134	1	20 dBm	1.43	85 mA	COMPONENT	5	SOLCC10,.12SQ,20	50 ohm								1500 MHz	2700 MHz
BGA2716,115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	-10 dBm		21 mA	COMPONENT	5	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		19 dB		Tin (Sn)		e3	100 MHz	3000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.