PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part RoHS Manufacturer RF or Microwave Device Type Mounting Feature No. of Terminals Package Body Material Technology Screening Level Total Dose (V) Maximum Supply Voltage No. of Functions Maximum Input Power (CW) Maximum Voltage Standing Wave Ratio Maximum Supply Current Construction Power Supplies (V) Package Equivalence Code Characteristic Impedance Sub-Category Maximum Operating Temperature Gain Minimum Operating Temperature Terminal Finish Additional Features JESD-609 Code Minimum Operating Frequency Maximum Operating Frequency

MHW6182

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

BIPOLAR

21.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

-20 Cel

40 MHz

550 MHz

MHW1345

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

BIPOLAR

1

5 dBm

2

330 mA

MODULE

24

SOT-115J

50 ohm

RF/Microwave Amplifiers

100 Cel

33.5 dB

-20 Cel

10 MHz

200 MHz

CGY887

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

250 mA

COMPONENT

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

22 dB

-20 Cel

40 MHz

870 MHz

MHW1304LA

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

30 dB

-20 Cel

5 MHz

65 MHz

MMG2001NT1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

440 mA

COMPONENT

24

SOP16,.35,32

75 ohm

RF/Microwave Amplifiers

100 Cel

21 dB

-20 Cel

40 MHz

870 MHz

MMZ38333BT1

NXP Semiconductors

NARROW BAND LOW POWER

SURFACE MOUNT

24

PLASTIC/EPOXY

HYBRID

1

30 dBm

1.58

1200 mA

COMPONENT

5

LCC24,.16SQ,20

50 ohm

36.3 dB

TIN

e3

3400 MHz

3800 MHz

MHW7342

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

350 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

33.8 dB

-20 Cel

40 MHz

750 MHz

MHW9267

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

460 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

27 dB

-20 Cel

40 MHz

870 MHz

MHW8227

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

440 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

47 MHz

870 MHz

CGD942C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

24

SOT-115J

RF/Microwave Amplifiers

935298613115

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

IEC-60134

1

20 dBm

1.08

85 mA

COMPONENT

5

SOLCC8,.08SQ,20

50 ohm

85 Cel

-40 Cel

2000 MHz

6000 MHz

MD7IC2755GNR1

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

MOS

2

30 dBm

10

COMPONENT

28

FLNG,.67"H.SPACE

50 ohm

RF/Microwave Amplifiers

23 dB

MATTE TIN

e3

2500 MHz

2700 MHz

MHL19338N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

28

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1900 MHz

2000 MHz

MC13852EP

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BICMOS

1

10 dBm

6.5 mA

COMPONENT

2.75

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

85 Cel

16.4 dB

-30 Cel

400 MHz

1000 MHz

CGY1043,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

MHW9186

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

265 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

18 dB

-20 Cel

40 MHz

870 MHz

MHW1253LA

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

110 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

25 dB

-20 Cel

5 MHz

200 MHz

MHW1224

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

5 MHz

200 MHz

MMRF2010NR1

NXP Semiconductors

NARROW BAND HIGH POWER

SURFACE MOUNT

14

PLASTIC/EPOXY

LDMOS

1

25 dBm

10

COMPONENT

50

50 ohm

150 Cel

30.5 dB

-55 Cel

TIN

e3

1030 MHz

1090 MHz

CGD914,112

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

19.75 dBm

375 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.2 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

CGD923

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

490 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

19.5 dB

-20 Cel

GOLD

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

CGD1042HI,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

CGY1032,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

280 mA

24

SOT-115J

RF/Microwave Amplifiers

MHL19338NN

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

28

MOT CASE 301AP-02

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

1900 MHz

2000 MHz

MHW8202B

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

240 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

20.3 dB

-20 Cel

40 MHz

870 MHz

MHW8227A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

440 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

47 MHz

870 MHz

MML09212HT1

NXP Semiconductors

WIDE BAND MEDIUM POWER

SURFACE MOUNT

12

PLASTIC/EPOXY

1

178 mA

5

SOLCC12,.12,20

RF/Microwave Amplifiers

MATTE TIN

e3

MHW9189

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

440 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

19.7 dB

-20 Cel

40 MHz

870 MHz

MHW1244

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

16.25 dBm

240 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

24 dB

-20 Cel

5 MHz

200 MHz

MHL9236N

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

620 mA

COMPONENT

26

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29 dB

-20 Cel

800 MHz

960 MHz

MMG2001T1

NXP Semiconductors

WIDE BAND HIGH POWER

SURFACE MOUNT

16

PLASTIC/EPOXY

GAAS

1

440 mA

COMPONENT

24

SOP16,.35,32

75 ohm

RF/Microwave Amplifiers

100 Cel

21 dB

-20 Cel

40 MHz

870 MHz

MHW9207A

NXP Semiconductors

WIDE BAND MEDIUM POWER

PLASTIC/EPOXY

GAAS

1

440 mA

COMPONENT

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

20.6 dB

-20 Cel

47 MHz

870 MHz

MHW8205

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

21.25 dBm

435 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

20 dB

-20 Cel

40 MHz

860 MHz

MHL19936N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

18 dBm

1.5

1450 mA

COMPONENT

26

MOT CASE 301AY-01

50 ohm

RF/Microwave Amplifiers

100 Cel

27.5 dB

-20 Cel

1900 MHz

2000 MHz

MML20211HT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

1

22 dBm

60 mA

COMPONENT

5

SOLCC8,.08,20

50 ohm

RF/Microwave Amplifiers

15 dB

TIN

e3

1400 MHz

2800 MHz

CGD1044HI,112

NXP Semiconductors

PLASTIC/EPOXY

1

460 mA

24

SOT-115J

RF/Microwave Amplifiers

MHW8267A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

460 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

27 dB

-20 Cel

40 MHz

870 MHz

MHW9227A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

440 mA

COMPONENT

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

21.5 dB

-20 Cel

47 MHz

870 MHz

CGY888C,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

300 mA

24

SOT-115J

RF/Microwave Amplifiers

MHW7205CR

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

435 mA

MODULE

24

MOT CASE 714Y-03

75 ohm

RF/Microwave Amplifiers

100 Cel

20 dB

-20 Cel

40 MHz

750 MHz

MHW8247A

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

GAAS

1

460 mA

MODULE

24

MOT CASE 1302-01

75 ohm

RF/Microwave Amplifiers

100 Cel

24.4 dB

-20 Cel

47 MHz

870 MHz

MHW6342T

NXP Semiconductors

WIDE BAND HIGH POWER

PANEL MOUNT

7

PLASTIC/EPOXY

BIPOLAR

1

6.25 dBm

340 mA

MODULE

24

75 ohm

100 Cel

34.5 dB

-20 Cel

40 MHz

550 MHz

CGY1047,112

NXP Semiconductors

PLASTIC/EPOXY

HYBRID

1

270 mA

24

SOT-115J

RF/Microwave Amplifiers

MBC13720NT1

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

6

PLASTIC/EPOXY

BICMOS

1

10 dBm

COMPONENT

2.7

TSSOP6,.08

RF/Microwave Amplifiers

85 Cel

12 dB

-30 Cel

TIN

e3

400 MHz

2400 MHz

CGD914

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

1

19.75 dBm

375 mA

MODULE

24

SOT-115J

75 ohm

RF/Microwave Amplifiers

100 Cel

20.2 dB

-20 Cel

Gold (Au)

LOW NOISE, HIGH RELIABILITY

e4

40 MHz

870 MHz

MC13144D

NXP Semiconductors

WIDE BAND LOW POWER

SURFACE MOUNT

8

PLASTIC/EPOXY

BIPOLAR

12 mA

COMPONENT

3

SOP8,.25

50 ohm

RF/Microwave Amplifiers

85 Cel

6 dB

-40 Cel

Tin/Lead (Sn/Pb)

LOW NOISE

e0

2000 MHz

MHW8182B

NXP Semiconductors

WIDE BAND HIGH POWER

PLASTIC/EPOXY

HYBRID

240 mA

MODULE

24

MOT CASE 714Y-02

75 ohm

RF/Microwave Amplifiers

100 Cel

18.2 dB

-20 Cel

40 MHz

860 MHz

MHL18336N

NXP Semiconductors

NARROW BAND HIGH POWER

PLASTIC/EPOXY

1

10 dBm

1.5

525 mA

COMPONENT

26

MOT CASE 301AP-02

50 ohm

RF/Microwave Amplifiers

100 Cel

29.5 dB

-20 Cel

1800 MHz

1900 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.