Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
BIPOLAR |
21.25 dBm |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
-20 Cel |
40 MHz |
550 MHz |
|||||||||||||
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
5 dBm |
2 |
330 mA |
MODULE |
24 |
SOT-115J |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
33.5 dB |
-20 Cel |
10 MHz |
200 MHz |
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|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
250 mA |
COMPONENT |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
22 dB |
-20 Cel |
40 MHz |
870 MHz |
|||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
110 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
30 dB |
-20 Cel |
5 MHz |
65 MHz |
|||||||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
COMPONENT |
24 |
SOP16,.35,32 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21 dB |
-20 Cel |
40 MHz |
870 MHz |
|||||||||
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
TIN |
e3 |
3400 MHz |
3800 MHz |
||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
350 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
33.8 dB |
-20 Cel |
40 MHz |
750 MHz |
|||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
460 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
27 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.5 dB |
-20 Cel |
47 MHz |
870 MHz |
||||||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
24 |
SOT-115J |
RF/Microwave Amplifiers |
||||||||||||||||||||
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.08 |
85 mA |
COMPONENT |
5 |
SOLCC8,.08SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
2000 MHz |
6000 MHz |
||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
2 |
30 dBm |
10 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
23 dB |
MATTE TIN |
e3 |
2500 MHz |
2700 MHz |
||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
28 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
1900 MHz |
2000 MHz |
|||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BICMOS |
1 |
10 dBm |
6.5 mA |
COMPONENT |
2.75 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
16.4 dB |
-30 Cel |
400 MHz |
1000 MHz |
||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
280 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
265 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
110 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
25 dB |
-20 Cel |
5 MHz |
200 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
16.25 dBm |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.5 dB |
-20 Cel |
5 MHz |
200 MHz |
||||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
TIN |
e3 |
1030 MHz |
1090 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
19.75 dBm |
375 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.2 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
870 MHz |
|||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
490 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19.5 dB |
-20 Cel |
GOLD |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
870 MHz |
|||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
460 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
280 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
28 |
MOT CASE 301AP-02 |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
1900 MHz |
2000 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
240 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.3 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
440 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.5 dB |
-20 Cel |
47 MHz |
870 MHz |
|||||||||||||
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
12 |
PLASTIC/EPOXY |
1 |
178 mA |
5 |
SOLCC12,.12,20 |
RF/Microwave Amplifiers |
MATTE TIN |
e3 |
|||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
19.7 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
16.25 dBm |
240 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
24 dB |
-20 Cel |
5 MHz |
200 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
620 mA |
COMPONENT |
26 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29 dB |
-20 Cel |
800 MHz |
960 MHz |
|||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
COMPONENT |
24 |
SOP16,.35,32 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
COMPONENT |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.6 dB |
-20 Cel |
47 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
21.25 dBm |
435 mA |
MODULE |
24 |
MOT CASE 714Y-02 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20 dB |
-20 Cel |
40 MHz |
860 MHz |
||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
18 dBm |
1.5 |
1450 mA |
COMPONENT |
26 |
MOT CASE 301AY-01 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
27.5 dB |
-20 Cel |
1900 MHz |
2000 MHz |
||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
22 dBm |
60 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
TIN |
e3 |
1400 MHz |
2800 MHz |
|||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
1 |
460 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
||||||||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
460 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
27 dB |
-20 Cel |
40 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
440 mA |
COMPONENT |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
21.5 dB |
-20 Cel |
47 MHz |
870 MHz |
||||||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
300 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
435 mA |
MODULE |
24 |
MOT CASE 714Y-03 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20 dB |
-20 Cel |
40 MHz |
750 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
GAAS |
1 |
460 mA |
MODULE |
24 |
MOT CASE 1302-01 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
24.4 dB |
-20 Cel |
47 MHz |
870 MHz |
||||||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PANEL MOUNT |
7 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
6.25 dBm |
340 mA |
MODULE |
24 |
75 ohm |
100 Cel |
34.5 dB |
-20 Cel |
40 MHz |
550 MHz |
|||||||||||
|
NXP Semiconductors |
PLASTIC/EPOXY |
HYBRID |
1 |
270 mA |
24 |
SOT-115J |
RF/Microwave Amplifiers |
|||||||||||||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
10 dBm |
COMPONENT |
2.7 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
85 Cel |
12 dB |
-30 Cel |
TIN |
e3 |
400 MHz |
2400 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
1 |
19.75 dBm |
375 mA |
MODULE |
24 |
SOT-115J |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
20.2 dB |
-20 Cel |
Gold (Au) |
LOW NOISE, HIGH RELIABILITY |
e4 |
40 MHz |
870 MHz |
|||||||
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
BIPOLAR |
12 mA |
COMPONENT |
3 |
SOP8,.25 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
6 dB |
-40 Cel |
Tin/Lead (Sn/Pb) |
LOW NOISE |
e0 |
2000 MHz |
|||||||||
NXP Semiconductors |
WIDE BAND HIGH POWER |
PLASTIC/EPOXY |
HYBRID |
240 mA |
MODULE |
24 |
MOT CASE 714Y-02 |
75 ohm |
RF/Microwave Amplifiers |
100 Cel |
18.2 dB |
-20 Cel |
40 MHz |
860 MHz |
|||||||||||||
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
10 dBm |
1.5 |
525 mA |
COMPONENT |
26 |
MOT CASE 301AP-02 |
50 ohm |
RF/Microwave Amplifiers |
100 Cel |
29.5 dB |
-20 Cel |
1800 MHz |
1900 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.