PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+
| Part | RoHS | Manufacturer | RF or Microwave Device Type | Mounting Feature | No. of Terminals | Package Body Material | Technology | Screening Level | Total Dose (V) | Maximum Supply Voltage | No. of Functions | Maximum Input Power (CW) | Maximum Voltage Standing Wave Ratio | Maximum Supply Current | Construction | Power Supplies (V) | Package Equivalence Code | Characteristic Impedance | Sub-Category | Maximum Operating Temperature | Gain | Minimum Operating Temperature | Terminal Finish | Additional Features | JESD-609 Code | Minimum Operating Frequency | Maximum Operating Frequency |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
NXP Semiconductors |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
1 |
110 mA |
3.3 |
SOLCC10,.12,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
17 |
PLASTIC/EPOXY |
LDMOS |
2 |
20 dBm |
10 |
COMPONENT |
28 |
50 ohm |
150 Cel |
30.5 dB |
-40 Cel |
Tin (Sn) |
e3 |
2400 MHz |
3100 MHz |
||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
25.5 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
||||||||||||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
16.3 mA |
3.3 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
TIN |
e3 |
||||||||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
82 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
14.3 dB |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
10 dBm |
1.55 |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
34.8 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
60 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
70 Cel |
-10 Cel |
TIN |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
48 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
13.5 dB |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
45 dBm |
10 |
COMPONENT |
28 |
FLNG,.8''H SPACE |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
e3 |
3400 MHz |
3600 MHz |
||||||||||||
|
|
NXP Semiconductors |
WIDE BAND HIGH POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
MOS |
1 |
4.7 dBm |
10 |
COMPONENT |
28 |
LCC24,.3SQ,32 |
50 ohm |
RF/Microwave Amplifiers |
35 dB |
TIN |
e3 |
728 MHz |
960 MHz |
||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
48 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
17 dB |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
14 |
PLASTIC/EPOXY |
LDMOS |
1 |
25 dBm |
10 |
COMPONENT |
50 |
50 ohm |
150 Cel |
30.5 dB |
-55 Cel |
Tin (Sn) |
e3 |
1030 MHz |
1090 MHz |
||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
17 |
PLASTIC/EPOXY |
LDMOS |
1 |
26 dBm |
10 |
COMPONENT |
28 |
50 ohm |
150 Cel |
23 dB |
-40 Cel |
Tin (Sn) |
e3 |
3400 MHz |
3800 MHz |
||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
1 |
20 dBm |
5 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
29 dB |
Matte Tin (Sn) |
e3 |
2000 MHz |
2200 MHz |
|||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
AEC-Q100 |
1 |
15.9 mA |
1.8 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
125 Cel |
-40 Cel |
TIN |
e3 |
|||||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
14 dB |
Tin (Sn) |
e3 |
||||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
1 |
20 dBm |
10 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
33 dB |
TIN |
IT CAN ALSO OPERATE AT 728 TO 768 MHZ |
e3 |
920 MHz |
960 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
E-PHEMT |
1 |
20 dBm |
65 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
14.2 dB |
Tin (Sn) |
e3 |
1000 MHz |
4000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
415 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
23.5 dB |
Tin (Sn) |
e3 |
1500 MHz |
2700 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
10 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.43 |
85 mA |
COMPONENT |
5 |
SOLCC10,.12SQ,20 |
50 ohm |
NICKEL PALLADIUM GOLD |
e4 |
1500 MHz |
2700 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.67 |
38 mA |
COMPONENT |
3.3 |
TSSOP6,.08 |
75 ohm |
85 Cel |
14 dB |
-40 Cel |
Tin (Sn) |
e3 |
40 MHz |
1000 MHz |
||||||
|
|
NXP Semiconductors |
WIDE BAND MEDIUM POWER |
SURFACE MOUNT |
16 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
18 dBm |
520 mA |
COMPONENT |
5 |
LCC16(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
14 dB |
800 MHz |
2200 MHz |
||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
55 mA |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
18 dB |
Matte Tin (Sn) |
e3 |
0 MHz |
6000 MHz |
||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
15 mA |
2.5 |
SOLCC6,.04,20 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
TIN |
e3 |
||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
17 |
PLASTIC/EPOXY |
LDMOS |
1 |
28 dBm |
10 |
COMPONENT |
28 |
50 ohm |
150 Cel |
26.5 dB |
-40 Cel |
3200 MHz |
4000 MHz |
||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
20 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
15 dB |
Tin (Sn) |
e3 |
|||||||||||
|
|
NXP Semiconductors |
NARROW BAND LOW POWER |
SURFACE MOUNT |
24 |
PLASTIC/EPOXY |
HYBRID |
1 |
30 dBm |
1.58 |
1200 mA |
COMPONENT |
5 |
LCC24,.16SQ,20 |
50 ohm |
36.3 dB |
Tin (Sn) |
e3 |
3400 MHz |
3800 MHz |
||||||||
|
|
NXP Semiconductors |
PLASTIC/EPOXY |
BIPOLAR |
AEC-Q100 |
1 |
2.5 |
SOT-343R |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
|||||||||||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
1 |
20 dBm |
5 |
420 mA |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
28 dB |
TIN |
e3 |
2000 MHz |
2200 MHz |
||||||||
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
3 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
12 dBm |
COMPONENT |
5 |
TO-243 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
MATTE TIN |
e3 |
0 MHz |
6000 MHz |
||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
45 mA |
COMPONENT |
3 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
20.8 dB |
Tin (Sn) |
e3 |
1000 MHz |
2000 MHz |
||||||||
|
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
MOS |
1 |
20 dBm |
5 |
COMPONENT |
28 |
FLNG,.8''H SPACE |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
29 dB |
Matte Tin (Sn) |
e3 |
2000 MHz |
2200 MHz |
|||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
21 mA |
5 |
TSSOP6,.08 |
RF/Microwave Amplifiers |
Tin (Sn) |
e3 |
|||||||||||||||
|
NXP Semiconductors |
NARROW BAND HIGH POWER |
PLASTIC/EPOXY |
1 |
45 dBm |
10 |
COMPONENT |
28 |
FLNG,.67"H.SPACE |
50 ohm |
RF/Microwave Amplifiers |
21 dB |
Matte Tin (Sn) |
e3 |
3400 MHz |
3600 MHz |
||||||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
1 |
20 dBm |
1.07 |
60 mA |
COMPONENT |
5 |
SOLCC8,.08,20 |
50 ohm |
85 Cel |
17 dB |
-40 Cel |
300 MHz |
1500 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BIPOLAR |
1 |
15 mA |
COMPONENT |
5 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
16 dB |
Tin (Sn) |
e3 |
100 MHz |
3000 MHz |
|||||||||
|
|
NXP Semiconductors |
WIDE BAND LOW POWER |
SURFACE MOUNT |
8 |
PLASTIC/EPOXY |
IEC-60134 |
1 |
20 dBm |
1.08 |
85 mA |
COMPONENT |
5 |
SOLCC8,.08SQ,20 |
50 ohm |
85 Cel |
-40 Cel |
2000 MHz |
6000 MHz |
|||||||||
|
|
NXP Semiconductors |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
BICMOS |
1 |
1.8/2.85 |
SOLCC6,.04,16 |
RF/Microwave Amplifiers |
85 Cel |
-40 Cel |
||||||||||||||||
|
|
Infineon Technologies |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
0 dBm |
8 mA |
COMPONENT |
3 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
11 dB |
-65 Cel |
TIN |
e3 |
100 MHz |
1800 MHz |
|||||||||
|
Infineon Technologies |
WIDE BAND LOW POWER |
SURFACE MOUNT |
5 |
PLASTIC/EPOXY |
GAAS |
COMPONENT |
3/5 |
TSOP5/6,.11,37 |
RF/Microwave Amplifiers |
Tin/Lead (Sn/Pb) |
e0 |
200 MHz |
2500 MHz |
||||||||||||||
|
|
Infineon Technologies |
NARROW BAND HIGH POWER |
SURFACE MOUNT |
20 |
PLASTIC/EPOXY |
1 |
15 dBm |
10 |
COMPONENT |
28 |
SOP20,.56 |
50 ohm |
27.5 dB |
1800 MHz |
2200 MHz |
||||||||||||
|
|
Infineon Technologies |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
80 mA |
5 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
||||||||||||||||
|
|
Infineon Technologies |
PLASTIC/EPOXY |
1 |
2.75 |
SOT-343R |
RF/Microwave Amplifiers |
85 Cel |
-30 Cel |
|||||||||||||||||||
|
|
Infineon Technologies |
PLASTIC/EPOXY |
1 |
6 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
|||||||||||||||||||
|
|
Infineon Technologies |
NARROW BAND LOW POWER |
SURFACE MOUNT |
7 |
PLASTIC/EPOXY |
1 |
COMPONENT |
2.78 |
LCC7(UNSPEC) |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
2.2 dB |
-35 Cel |
Matte Tin (Sn) |
e3 |
|||||||||||
|
|
Infineon Technologies |
PLASTIC/EPOXY |
BIPOLAR |
1 |
8 mA |
3 |
SOT-343R |
RF/Microwave Amplifiers |
150 Cel |
-65 Cel |
|||||||||||||||||
|
|
Infineon Technologies |
NARROW BAND LOW POWER |
SURFACE MOUNT |
6 |
PLASTIC/EPOXY |
1 |
8 dBm |
COMPONENT |
2.7 |
TSSOP6,.08 |
50 ohm |
RF/Microwave Amplifiers |
85 Cel |
20 dB |
-40 Cel |
||||||||||||
|
|
Infineon Technologies |
WIDE BAND LOW POWER |
PLASTIC/EPOXY |
BIPOLAR |
1 |
10 dBm |
80 mA |
COMPONENT |
5 |
SOT-343R |
50 ohm |
RF/Microwave Amplifiers |
150 Cel |
17.5 dB |
-65 Cel |
Tin (Sn) |
e3 |
0 MHz |
2700 MHz |
RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.
The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.
RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.