PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY885A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
MRFIC0930R2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	SOP8,.25		RF/Microwave Amplifiers	70 Cel	17 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
CA912	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY				17 dBm		760 mA		15	MOT CASE 714P-01	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel				40 MHz	860 MHz
BGY885B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY588C,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			345 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGY588N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGX885N,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID					240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BGM1012	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BIPOLAR		1	10 dBm		19 mA	COMPONENT	3	TSSOP6,.08	50 ohm	RF/Microwave Amplifiers		16 dB		Tin (Sn)	LOW NOISE	e3	100 MHz	3000 MHz
BGY587B,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID		1	6.25 dBm		340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	27.5 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGF802-20	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	20 dBm	2	320 mA	COMPONENT	26	FLNG,1.6"H.SPACE	50 ohm	RF/Microwave Amplifiers	90 Cel	28 dB	-20 Cel				869 MHz	894 MHz
BGY887B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
BGY84A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
934068534115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	7 mA	COMPONENT	0.8/1.8		50 ohm		85 Cel	10.5 dB	-40 Cel				2300 MHz	2690 MHz
BGD712,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA5800C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			18 dBm	2.6	440 mA	MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
MDE6IC9120NR1	NXP Semiconductors				PLASTIC/EPOXY	MOS		2					28	FLNG,1.0"H.SPACE		RF/Microwave Amplifiers				Matte Tin (Sn)		e3
CA2832C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			5 dBm	2		MODULE	28	SOT-115J	50 ohm	RF/Microwave Amplifiers	90 Cel	34 dB	-20 Cel		HIGH RELIABILITY		1 MHz	200 MHz
BGD802,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGD885	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					450 mA	MODULE	24	SOT-115D	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGA7027,135	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			195 mA		5	TO-243		RF/Microwave Amplifiers				TIN		e3
MW6IC2420NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	23 dBm	3	370 mA	MODULE	28	MOT CASE 1329-09	50 ohm	RF/Microwave Amplifiers		25.5 dB		Matte Tin (Sn)		e3
BGY885B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
SA2411DH	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1				COMPONENT	3	TSSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	13 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	2400 MHz	2500 MHz
BGD906MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY685A/04	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY			1			240 mA		24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE		40 MHz	600 MHz
BLM7G22S-60PBG,118	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			2					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
BGD704	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
CA4812C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6	400 mA	MODULE	12	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGA7127,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			325 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
SA5204AD	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5	33 mA	COMPONENT	6	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	350 MHz
CA4815C	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			14 dBm	2.6		MODULE	15	SOT-115J	50 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				10 MHz	1000 MHz
BGA7130,118	NXP Semiconductors		SURFACE MOUNT	8	PLASTIC/EPOXY			1			550 mA		5	SOLCC8,.12,20		RF/Microwave Amplifiers
MW4IC2020GMBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY			1	20 dBm	3		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	27 dB	-10 Cel	Tin/Lead (Sn/Pb)		e0	1805 MHz	1990 MHz
BGA3015,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
A2I20D040GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
BGE788,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD812,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BLM7G24S-30BGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
CGY2023G	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	48	PLASTIC/EPOXY	GAAS			2 dBm			COMPONENT	3.3	QFP48,.35SQ,20		RF/Microwave Amplifiers	85 Cel	33 dB	-20 Cel				1710 MHz	1785 MHz
MMG1001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY587,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY120A	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	HYBRID			7 dBm	3	.1 mA	MODULE	3.6	SMSIP4	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				824 MHz	849 MHz
BGD906	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MWE6IC9100NBR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		10		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers		31 dB		Matte Tin (Sn)		e3	869 MHz	960 MHz
MWIC930GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS		1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Matte Tin (Sn)		e3	746 MHz	960 MHz
BGY87	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1	16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
SA5209N	NXP Semiconductors	WIDE BAND LOW POWER	THROUGH HOLE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					55 mA	COMPONENT	5	DIP16,.3	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel				0 MHz	850 MHz
BGY1085A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.