PLASTIC/EPOXY RF & Microwave Amplifiers 2,400+

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	Screening Level	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
TSTM901-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY				14 dBm	2			26	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers		36 dB					860 MHz	900 MHz
STM376-2	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	BIPOLAR			14.77 dBm	1.5	425 mA		20	FLNG,2.21"H.SPACE	50 ohm	RF/Microwave Amplifiers	60 Cel	21 dB	-20 Cel				350 MHz	376 MHz
STM960-10	STMicroelectronics				PLASTIC/EPOXY								26	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
TSH691ID	STMicroelectronics		SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR							2.7	SOP8,.25		RF/Microwave Amplifiers	85 Cel		-35 Cel	Tin/Lead (Sn/Pb)		e0
STM961-15	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY							MODULE	26	MOT CASE 301H-01		RF/Microwave Amplifiers		28 dB					915 MHz	960 MHz
STM901-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY				14 dBm	3		MODULE	26	FLNG,2.4"H.SPACE	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				860 MHz	900 MHz
STM900-30	STMicroelectronics				PLASTIC/EPOXY								26	FLNG,2.4"H.SPACE		RF/Microwave Amplifiers
STM1645-30	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			13 dBm	2		COMPONENT	12,28	MOT CASE 700-04	50 ohm	RF/Microwave Amplifiers	70 Cel	34.8 dB	-35 Cel				1625 MHz	1665 MHz
TSH690ID	STMicroelectronics	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR			10 dBm			COMPONENT	2.7	SOP8,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	19 dB	-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	40 MHz	1000 MHz
TSTM872-20	STMicroelectronics	NARROW BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			26 dBm	2		MODULE	12.5	MOT CASE 301G-03	50 ohm	RF/Microwave Amplifiers	100 Cel		-30 Cel				806 MHz	870 MHz
STB7001	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	BIPOLAR		1		1.5		COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers		0 dB			THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS		925 MHz	960 MHz
SMA661AS	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY	BICMOS		1				COMPONENT	2.7	FL6,.047,20	50 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-40 Cel				1500 MHz	1650 MHz
STB7002	STMicroelectronics	NARROW BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY			1		1.8	22.5 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers		0 dB			THREE GAIN LEVELS-0 DB, 18 DB AND 26 DB TYPICALLY AVAILABLE AT 2.8 VOLTS		1805 MHz	1880 MHz
BGD902	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		435 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel		LOW NOISE		40 MHz	900 MHz
BGD704/07,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			435 mA		24	SOT-115J		RF/Microwave Amplifiers
BLM7G1822S-40PBGY	NXP Semiconductors		SURFACE MOUNT	16	PLASTIC/EPOXY			1					28	SOP16(UNSPEC)		RF/Microwave Amplifiers
BGY883	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	15 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGD814,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID			21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD906,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY785A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MRFIC0930DMR2	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	8	PLASTIC/EPOXY	GAAS			3 dBm		12 mA	COMPONENT	2.8	TSSOP8,.19		RF/Microwave Amplifiers	70 Cel	17.5 dB	-30 Cel	Tin/Lead (Sn/Pb)	LOW NOISE	e0	800 MHz	1000 MHz
BGU6005/N2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.43		COMPONENT	1.8/2.85	SOLCC6,.04,20	50 ohm		150 Cel	17.5 dB		Tin (Sn)		e3	1559 MHz	1610 MHz
934068532115	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	26 dBm	1.22	6.6 mA	COMPONENT	0.8/1.8,2.8	SOLCC6,.03,16	50 ohm		85 Cel	12.5 dB	-40 Cel				728 MHz	960 MHz
AFSC5G40E38T2	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	26	PLASTIC/EPOXY	LDMOS		1				COMPONENT	28	LCC26,.24X.4,40	50 ohm		125 Cel	27.1 dB					3700 MHz	4000 MHz
SA5219D,602	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	BIPOLAR					50 mA	COMPONENT	5	SOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel		-40 Cel	Nickel/Palladium/Gold (Ni/Pd/Au)		e4	0 MHz	700 MHz
BGD714,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.8 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	750 MHz
BGY240S	NXP Semiconductors	NARROW BAND HIGH POWER		4	PLASTIC/EPOXY	HYBRID		1	7 dBm	3			3.5	MODULE,4LEAD,.51	50 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-30 Cel				890 MHz	915 MHz
MRFIC0915T1	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	4	PLASTIC/EPOXY	BIPOLAR			10 dBm		2.5 mA	COMPONENT	2.7	SOT-143R	50 ohm	RF/Microwave Amplifiers	100 Cel	5 dB	-40 Cel	Tin/Lead (Sn/Pb)		e0	100 MHz	2500 MHz
MWE6IC9080NR1	NXP Semiconductors	NARROW BAND HIGH POWER			PLASTIC/EPOXY	MOS		1	20.5 dBm	10		COMPONENT	28	FLNG,.67"H.SPACE	50 ohm	RF/Microwave Amplifiers	150 Cel	27 dB		Matte Tin (Sn)		e3	865 MHz	960 MHz
BGY787,112	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID					240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGA3012,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			125 mA		8	TO-243		RF/Microwave Amplifiers	85 Cel		-40 Cel	TIN		e3
BGY685AL	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		1			250 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	600 MHz
A3I20X050NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	7	PLASTIC/EPOXY	LDMOS		1	20 dBm			COMPONENT	2.15/28		50 ohm		150 Cel	28 dB	-40 Cel	TIN		e3	1800 MHz	2200 MHz
BGA7020,115	NXP Semiconductors		SURFACE MOUNT	3	PLASTIC/EPOXY			1			130 mA		5	TO-243		RF/Microwave Amplifiers
BGD902L,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID					380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGY885A/07,112	NXP Semiconductors				PLASTIC/EPOXY	HYBRID		1			240 mA		24	SOT-115J		RF/Microwave Amplifiers	100 Cel		-20 Cel
BLM6G22-30	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	LDMOS	IEC-60134	1		5		COMPONENT			50 ohm		200 Cel	27.5 dB		TIN			2100 MHz	2200 MHz
BGA6289	NXP Semiconductors	WIDE BAND LOW POWER	SURFACE MOUNT	3	PLASTIC/EPOXY			1	15 dBm		96 mA	COMPONENT	8	TO-243	50 ohm	RF/Microwave Amplifiers		12 dB		Tin (Sn)		e3	850 MHz	2500 MHz
934069005115	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	1.6 mA	COMPONENT	0.8,1.8/2.85	SOLCC6,.03,16	50 ohm		85 Cel	14.5 dB	-40 Cel	Tin (Sn)		e3	1559 MHz	1610 MHz
A2I20D040NR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	18 dBm	10		COMPONENT	28		50 ohm		150 Cel	31.5 dB	-40 Cel	TIN		e3	1400 MHz	2200 MHz
A3I35D012WNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz
OM320	NXP Semiconductors		THROUGH HOLE MOUNT	10	PLASTIC/EPOXY	HYBRID							24	SIP10,.2		RF/Microwave Amplifiers	70 Cel		-20 Cel	Tin/Lead (Sn/Pb)		e0
BGY85	NXP Semiconductors	WIDE BAND LOW POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
CGY2105ATS	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS		2			144 mA	COMPONENT	+-5	SSOP16,.25	50 ohm	RF/Microwave Amplifiers	85 Cel	14.6 dB	-40 Cel		LOW NOISE		1710 MHz	1910 MHz
BGU6009/N2	NXP Semiconductors	NARROW BAND LOW POWER	SURFACE MOUNT	6	PLASTIC/EPOXY		IEC-60134	1	10 dBm	1.78	.002 mA	COMPONENT	1.8	SOLCC6,.03,16	50 ohm								1559 MHz	1610 MHz
BGX881	NXP Semiconductors	WIDE BAND MEDIUM POWER			PLASTIC/EPOXY	HYBRID			16.25 dBm		240 mA	MODULE	24	MOT CASE 714B	75 ohm	RF/Microwave Amplifiers	100 Cel	12 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
A2I35H060GNR1	NXP Semiconductors	NARROW BAND HIGH POWER	SURFACE MOUNT	17	PLASTIC/EPOXY	LDMOS		1	26 dBm	10		COMPONENT	28		50 ohm		150 Cel	23 dB	-40 Cel	TIN		e3	3400 MHz	3800 MHz
A3I35D012WGNR1	NXP Semiconductors	NARROW BAND MEDIUM POWER	SURFACE MOUNT	17	PLASTIC/EPOXY			2	26 dBm			COMPONENT	28	FLNG,.72"H.SPACE	50 ohm		150 Cel	26.5 dB	-40 Cel				3200 MHz	4000 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.