WIDE BAND HIGH POWER RF & Microwave Amplifiers 475

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
935317726528	NXP Semiconductors	WIDE BAND HIGH POWER																	Tin (Sn)		e3
MW7IC915NT1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	24	PLASTIC/EPOXY	MOS	1	4.7 dBm	10		COMPONENT	28	LCC24,.3SQ,32	50 ohm	RF/Microwave Amplifiers		35 dB		TIN		e3	728 MHz	960 MHz
935313779528	NXP Semiconductors	WIDE BAND HIGH POWER																	Tin (Sn)		e3
935312376528	NXP Semiconductors	WIDE BAND HIGH POWER																	Tin (Sn)		e3
PTMA080304MV1	Infineon Technologies	WIDE BAND HIGH POWER
PTMA210404FLV1R250	Infineon Technologies	WIDE BAND HIGH POWER						20 dBm	10		COMPONENT						26 dB		GOLD		e4	1800 MHz	2200 MHz
PTMA080302MV1AUMA1	Infineon Technologies	WIDE BAND HIGH POWER						16 dBm			COMPONENT			50 ohm			31 dB					700 MHz	1000 MHz
PTMA080152M-20W	Infineon Technologies	WIDE BAND HIGH POWER
PTMA080152MV1AUMA1/SAMPLE	Infineon Technologies	WIDE BAND HIGH POWER
PTMA080152M	Infineon Technologies	WIDE BAND HIGH POWER						42 dBm	10		COMPONENT			50 ohm			29 dB		Matte Tin (Sn)		e3	700 MHz	1000 MHz
PTMA080302MV1	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	16 dBm			COMPONENT	28	SOP20,.56	50 ohm	RF/Microwave Amplifiers		31 dB					700 MHz	1000 MHz
PTMA210404FLV1	Infineon Technologies	WIDE BAND HIGH POWER						20 dBm	10		COMPONENT						26 dB		GOLD		e4	1800 MHz	2200 MHz
PTMA080152MV1R500AUMA1	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			29 dB					700 MHz	1000 MHz
PTMA080304M-2X15W	Infineon Technologies	WIDE BAND HIGH POWER
PTMA080152MV1	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1					28	SOP20,.56		RF/Microwave Amplifiers
PTMA080152MV1R500	Infineon Technologies	WIDE BAND HIGH POWER	SURFACE MOUNT	20	PLASTIC/EPOXY		1	15 dBm	10		COMPONENT	28	SOP20,.56	50 ohm			29 dB					700 MHz	1000 MHz
PTMA080304MV1AUMA1	Infineon Technologies	WIDE BAND HIGH POWER
PTMA080302M	Infineon Technologies	WIDE BAND HIGH POWER						16 dBm	10		COMPONENT			50 ohm			31 dB		Matte Tin (Sn)		e3	700 MHz	1000 MHz
JS9U29-AS	Toshiba	WIDE BAND HIGH POWER
JS9U30-AS	Toshiba	WIDE BAND HIGH POWER
S-AU16SH	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	490 MHz	512 MHz
S-AU16H	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	450 MHz	470 MHz
S-AU6H	Toshiba	WIDE BAND HIGH POWER						24 dBm	2					50 ohm		100 Cel		-30 Cel				480 MHz	512 MHz
S-AU6L	Toshiba	WIDE BAND HIGH POWER						24 dBm	2					50 ohm		100 Cel		-30 Cel				400 MHz	440 MHz
S-AU6M	Toshiba	WIDE BAND HIGH POWER						24 dBm	2					50 ohm		100 Cel		-30 Cel				440 MHz	480 MHz
S-AU16L	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	400 MHz	430 MHz
TMD0608-4	Toshiba	WIDE BAND HIGH POWER						18 dBm			MODULE					80 Cel		-30 Cel				5650 MHz	8500 MHz
S-AU16VH	Toshiba	WIDE BAND HIGH POWER						24.77 dBm	2.5							100 Cel		-30 Cel	Tin/Lead (Sn/Pb)		e0	470 MHz	490 MHz
UPB1509GV	Renesas Electronics	WIDE BAND HIGH POWER														85 Cel		-40 Cel
MC-7894	Renesas Electronics	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			385 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	40 MHz	1000 MHz
MC-7831-HA-AZ	Renesas Electronics	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	85 Cel	18 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	0 MHz	1000 MHz
MC-7894-AZ	Renesas Electronics	WIDE BAND HIGH POWER
UPB1511TB	Renesas Electronics	WIDE BAND HIGH POWER
MC-7832-HA-AZ	Renesas Electronics	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-30 Cel	Tin/Bismuth (Sn/Bi)	LOW NOISE	e6	40 MHz	1000 MHz
APT-6077	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				2000 MHz	6000 MHz
APT-4074	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				2000 MHz	4000 MHz
APT-8076R	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				4000 MHz	8000 MHz
APT-6077R	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				2000 MHz	6000 MHz
APT-4074R	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				2000 MHz	4000 MHz
APT-8076	Broadcom	WIDE BAND HIGH POWER						20 dBm	2		MODULE			50 ohm		50 Cel		0 Cel				4000 MHz	8000 MHz
AWP-117500	Broadcom	WIDE BAND HIGH POWER						10 dBm												HIGH RELIABILITY		10700 MHz	11700 MHz
ALM-32220-TR1G	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz
ALM-32220-TR2G	Broadcom	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1	28 dBm		930 mA	MODULE	5	MODULE(UNSPEC)	50 ohm	RF/Microwave Amplifiers		13.5 dB					1700 MHz	2700 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.