WIDE BAND HIGH POWER RF & Microwave Amplifiers 475

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
MHW9227	NXP Semiconductors	WIDE BAND HIGH POWER				GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW7185CL	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	750 MHz
MHW9236N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	23 dB	-20 Cel				40 MHz	870 MHz
MHW8185L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
MHW7292	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				40 MHz	750 MHz
MHW8227AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	21.5 dB	-20 Cel				47 MHz	870 MHz
MHW8292	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		6.25 dBm		350 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel				40 MHz	860 MHz
MHW9206N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19.6 dB	-20 Cel				47 MHz	870 MHz
MHW9186N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHW10186N	NXP Semiconductors	WIDE BAND HIGH POWER									COMPONENT			75 ohm		100 Cel	18 dB	-20 Cel				40 MHz	1000 MHz
MHL9236M	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1	10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-02	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	960 MHz
MMRF2007GNR1	NXP Semiconductors	WIDE BAND HIGH POWER																	TIN		e3
MHW8185	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	860 MHz
CGD942C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	28 dBm			MODULE	24	SOT-115J		RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
MHW9188A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW8182C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel				40 MHz	860 MHz
MHW7185C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	750 MHz
MHW8205L	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				385 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19.8 dB	-20 Cel				40 MHz	870 MHz
MHW9188N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
CGY887,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			250 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel				40 MHz	870 MHz
CGD914MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.2 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MHW9186A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			265 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18 dB	-20 Cel				40 MHz	870 MHz
MHW1353LA	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			110 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34.5 dB	-20 Cel				5 MHz	150 MHz
MHW9189A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				47 MHz	870 MHz
MHW7182B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel	18.2 dB	-20 Cel				40 MHz	750 MHz
MHVIC2114NR2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	MOS	1	5 dBm	3		COMPONENT	27	SOP16,.35,32	50 ohm	RF/Microwave Amplifiers	150 Cel	29 dB					1600 MHz	2600 MHz
MHW9187	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.4 dB	-20 Cel				40 MHz	870 MHz
MHW7182C	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.2 dB	-20 Cel				40 MHz	750 MHz
MHW9267N	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW9182C	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID				240 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel				40 MHz	1000 MHz
MHW8222BN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	21.8 dB	-20 Cel				40 MHz	860 MHz
MHL9236	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID		10 dBm	1.5	620 mA	COMPONENT	26	MOT CASE 301AP-01	50 ohm	RF/Microwave Amplifiers	100 Cel	29.5 dB	-20 Cel				800 MHz	960 MHz
MHW9267A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			460 mA	COMPONENT	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	27 dB	-20 Cel				40 MHz	870 MHz
MHW9247AN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	24.4 dB	-20 Cel				40 MHz	870 MHz
CGD923,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			490 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19.5 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	870 MHz
MHW1223LA	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID	1			110 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	22.1 dB	-20 Cel				5 MHz	200 MHz
MHW7185CR	NXP Semiconductors	WIDE BAND HIGH POWER			METAL	HYBRID				435 mA	MODULE	24	MOT CASE 714Y-03	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	750 MHz
MHW7182CN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.2 dB	-20 Cel				40 MHz	750 MHz
MHW8222	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	21.8 dB	-20 Cel				40 MHz	860 MHz
MHW7222BN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	22.2 dB	-20 Cel				40 MHz	750 MHz
MHW9188	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	GAAS	1			440 mA	MODULE	24	MOT CASE 1302-01	75 ohm	RF/Microwave Amplifiers	100 Cel	19.7 dB	-20 Cel				40 MHz	870 MHz
MHW7185CLN	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.7 dB	-20 Cel				40 MHz	750 MHz
MHW7222A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		240 mA	MODULE	28	MOT CASE 714Y-02	75 ohm	RF/Microwave Amplifiers	100 Cel		-20 Cel				40 MHz	750 MHz
935319266528	NXP Semiconductors	WIDE BAND HIGH POWER																	Tin (Sn)		e3
935375787528	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS	1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	Tin (Sn)		e3	575 MHz	960 MHz
935314847528	NXP Semiconductors	WIDE BAND HIGH POWER																	Tin (Sn)		e3
935325421118	NXP Semiconductors	WIDE BAND HIGH POWER
935375786528	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	12	PLASTIC/EPOXY	LDMOS	1	20 dBm	10		COMPONENT	48		50 ohm		150 Cel	35 dB	-40 Cel	Tin (Sn)		e3	575 MHz	960 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.