WIDE BAND HIGH POWER RF & Microwave Amplifiers 475

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Part	Manufacturer	RF or Microwave Device Type	Mounting Feature	No. of Terminals	Package Body Material	Technology	No. of Functions	Maximum Input Power (CW)	Maximum Voltage Standing Wave Ratio	Maximum Supply Current	Construction	Power Supplies (V)	Package Equivalence Code	Characteristic Impedance	Sub-Category	Maximum Operating Temperature	Gain	Minimum Operating Temperature	Terminal Finish	Additional Features	JESD-609 Code	Minimum Operating Frequency	Maximum Operating Frequency
BGY66B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		135 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGD904L,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				380 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD506	NXP Semiconductors	WIDE BAND HIGH POWER						16.25 dBm			MODULE			75 ohm		100 Cel	22.1 dB	-20 Cel		LOWNOISE		40 MHz	550 MHz
934055388112	NXP Semiconductors	WIDE BAND HIGH POWER						16.25 dBm			MODULE			75 ohm		100 Cel	24.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		5 MHz	120 MHz
BGD712	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
934015620112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGY885A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
CA912	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY			17 dBm		760 mA		15	MOT CASE 714P-01	75 ohm	RF/Microwave Amplifiers	100 Cel	16.5 dB	-20 Cel				40 MHz	860 MHz
BGY885B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY588N	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	35 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGY887B	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
934055568112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY84A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		200 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
BGD712,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
934055390112	NXP Semiconductors	WIDE BAND HIGH POWER						16.25 dBm			MODULE			75 ohm		90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGD802,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY885B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			235 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGD906MI	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	GOLD	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
BGD704	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
BGE788,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				320 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD812,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
MMG1001T1	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
BGY587,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
BGD906	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz
MWIC930GNR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Matte Tin (Sn)		e3	746 MHz	960 MHz
BGY87	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1	16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	21.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
MWIC930NR1	NXP Semiconductors	WIDE BAND HIGH POWER							5		COMPONENT			50 ohm		115 Cel	28 dB	-30 Cel	TIN		e3	746 MHz	960 MHz
BGY1085A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGD804,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	860 MHz
BGY85A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		240 mA	MODULE	24	SOT-115C	75 ohm	RF/Microwave Amplifiers	100 Cel	18.7 dB	-20 Cel		LOW NOISE		40 MHz	450 MHz
934055914112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	750 MHz
MWIC930R1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
BGY67A	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		16.25 dBm		230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	23.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
BGY67,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				230 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	90 Cel	21.5 dB	-20 Cel		LOW NOISE		5 MHz	200 MHz
MW4IC915GMBR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY		1		5		COMPONENT	26	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	85 Cel	29 dB	-10 Cel	Tin/Lead (Sn/Pb)	IT CAN ALSO OPERATE AT 921 TO 960 MHZ	e0	860 MHz	960 MHz
934027320114	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	860 MHz
BGD816L	NXP Semiconductors	WIDE BAND HIGH POWER				HYBRID	1			375 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	22 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGD902MI	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	19 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	900 MHz
BGY888	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	34 dB	-20 Cel		LOW NOISE	e4	40 MHz	860 MHz
MWIC930GR1	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	MOS	1		5		COMPONENT	27	FLNG,.8''H SPACE	50 ohm	RF/Microwave Amplifiers	115 Cel	28 dB	-30 Cel	Tin/Lead (Sn/Pb)		e0	746 MHz	960 MHz
BGY588C	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			345 mA	COMPONENT	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	33.7 dB	-20 Cel				40 MHz	550 MHz
BGD814	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		410 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	870 MHz
BGY585A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.8 dB	-20 Cel		LOW NOISE		40 MHz	550 MHz
MMG1001R2	NXP Semiconductors	WIDE BAND HIGH POWER	SURFACE MOUNT	16	PLASTIC/EPOXY	GAAS	1			265 mA	COMPONENT	12/24	SOP16,.35,32	75 ohm	RF/Microwave Amplifiers	100 Cel	19 dB	-20 Cel				40 MHz	870 MHz
934044720112	NXP Semiconductors	WIDE BAND HIGH POWER									MODULE			75 ohm		100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	860 MHz
BGY1085A,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID				240 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	18.5 dB	-20 Cel		LOW NOISE, HIGH RELIABILITY		40 MHz	1000 MHz
BGE787B,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID	1			340 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	29 dB	-20 Cel		LOW NOISE		40 MHz	750 MHz
BGD904,112	NXP Semiconductors	WIDE BAND HIGH POWER			PLASTIC/EPOXY	HYBRID		21.25 dBm		435 mA	MODULE	24	SOT-115J	75 ohm	RF/Microwave Amplifiers	100 Cel	20.5 dB	-20 Cel	Gold (Au)	LOW NOISE, HIGH RELIABILITY	e4	40 MHz	900 MHz

RF & Microwave Amplifiers

RF (Radio Frequency) and microwave amplifiers are electronic devices used to amplify signals in the frequency range from 1 MHz to several GHz. They are commonly used in various applications such as telecommunications, wireless communications, radar systems, and satellite communication. RF and microwave amplifiers can be classified into different types based on their operating principle, frequency range, power output, and application.

The most commonly used types of RF and microwave amplifiers include transistor amplifiers, vacuum tube amplifiers, and hybrid amplifiers. Transistor amplifiers are widely used due to their low cost, small size, and high reliability. They can be further classified into bipolar junction transistor (BJT) amplifiers, field-effect transistor (FET) amplifiers, and HEMT (high electron mobility transistor) amplifiers. Vacuum tube amplifiers, such as the klystron and traveling-wave tube, are used in high-power applications where high gain and efficiency are required. Hybrid amplifiers combine the advantages of both transistor and vacuum tube amplifiers.

RF and microwave amplifiers can also be classified based on their frequency range. Low-frequency amplifiers operate in the range of a few kHz to a few hundred MHz, while high-frequency amplifiers operate in the range of several GHz. Amplifiers can also be classified based on their power output, which can range from a few milliwatts to several kilowatts.